Abstract: Disclosed embodiments may provide techniques for generating customizable content based on extracted insights. A computer-implemented method can include accessing input data that includes initial content. The computer-implemented method can also include determining a content format of customized content to be generated by processing the input data. In some instances, the content format specifies how the customized content is to be formatted for a target recipient. The computer-implemented method can also include generating one or more prompts to be processed by a content machine-learning model for generating the customized content. The one or more prompts can be generated based on the input data and the content format. The computer-implemented method can also include applying the content machine-learning model to the one or more prompts to generate the customized content. The computer-implemented method can also include outputting the customized content.

Abstract: A bit line driver for a static random access memory (SRAM) cell including: a first voltage supply for supplying a first voltage; a second voltage supply for supplying a second voltage that is less than the first voltage; a write circuit to drive a bit line and an inverse bit line when writing to the SRAM cell; and a pre-charge circuit to pre-charge the bit line and the inverse bit line before reading the content of the SRAM cell. The bit line driver supplies a voltage less than the first voltage by a threshold voltage of one transistor to the bit line or the inverse bit line when the bit line driver drives the bit line or the inverse bit line to a high state.

Abstract: A memory device that has an internal memory array provides timing signals to control the output timing of one or more redundant memory blocks that substitute for defective memory blocks in the internal memory array. In one embodiment, the internal memory array includes a pipelined output stage, and the timing signals ensure that the data is output from the memory devices in the order memory access requests are issued, even when the latency of the redundant memory blocks is less than the latency of the main memory array by up to two clock periods. In one embodiment, a FIFO memory queues the output data of the redundant memory blocks waiting to be output.

Abstract: A memory device that has an internal memory array provides timing signals to control the output timing of one or more redundant memory blocks that substitute for defective memory blocks in the internal memory array. In one embodiment, the internal memory array includes a pipelined output stage, and the timing signals ensure that the data is output from the memory devices in the order memory access requests are issued, even when the latency of the redundant memory blocks is less than the latency of the main memory array by up to two clock periods. In one embodiment, a FIFO memory queues the output data of the redundant memory blocks waiting to be output.