Abstract: A resist composition comprising (A) an organic solvent; (B) at least two polymers with weight average molecular weights of 1,000-500,000, which have at least one type of acid labile group and are crosslinked within a molecule and/or between molecules with crosslinking groups having C--O--C linkages; and (C) a photoacid generator is sensitive to high-energy radiation, has excellent sensitivity, resolution, and plasma etching resistance, and provides resist patterns of outstanding thermal stability and reproducibility. Patterns obtained with this resist composition are less prone to overhanging and have excellent dimensional controllability. The resist composition is suitable as a micropatterning material for VLSI fabrication because it has a low absorption at the exposure wavelength of a KrF excimer laser, thus enabling the easy formation of a finely defined pattern having sidewalls perpendicular to the substrate.