Patents by Inventor Watanabe TOMOHIRO

Watanabe TOMOHIRO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9263249
    Abstract: The present invention is directed to a method and an apparatus for manufacturing a semiconductor device including step S22 to form an insulating film on a front surface of a semiconductor wafer that is a surface on which a semiconductor element is to be formed and on a back surface that is a surface opposing the front surface, step S26 to remove the insulating film formed on the back surface by selectively providing a first chemical on the back surface of the semiconductor wafer, and step S30 to remove the insulating film formed on the front surface by simultaneously immersing the plurality of semiconductor wafers in a second chemical.
    Type: Grant
    Filed: July 1, 2008
    Date of Patent: February 16, 2016
    Assignee: Cypress Semiconductor Corporation
    Inventors: Watanabe Tomohiro, Fumihiko Inoue
  • Publication number: 20090011600
    Abstract: The present invention is directed to a method and an apparatus for manufacturing a semiconductor device including step S22 to form an insulating film on a front surface of a semiconductor wafer that is a surface on which a semiconductor element is to be formed and on a back surface that is a surface opposing the front surface, step S26 to remove the insulating film formed on the back surface by selectively providing a first chemical on the back surface of the semiconductor wafer, and step S30 to remove the insulating film formed on the front surface by simultaneously immersing the plurality of semiconductor wafers in a second chemical.
    Type: Application
    Filed: July 1, 2008
    Publication date: January 8, 2009
    Applicant: Spansion LLC
    Inventors: Watanabe TOMOHIRO, Fumihiko INOUE