Abstract: A semiconductor storage device of an embodiment includes a memory block, a resistance measurement circuit, and a control circuit. The memory block includes first to third control signal lines connected to gates of a first select gate transistor, a plurality of memory cell transistors, and a second select gate transistor. The resistance measurement circuit measures resistance of at least one control signal line among the first to third control signal lines. The control circuit performs erase, program, and read of data at the plurality of memory cell transistors included in the memory block. The control circuit determines, based on a measurement result of the resistance measurement by the resistance measurement circuit, whether to set a fail status to a result of erase verify that verifies the erase.

Abstract: A search method and apparatus which searches for a store handling commodities including receiving a search keyword relating to a targeted commodity, as a condition, searching, based on the search keyword relating to the targeted commodity, a stock database of each store, extracting information of each store having the targeted commodity in stock as a first extracted store, searching the stock database based on data of the targeted commodity, extracting information of a store as a second extracted store, and transmitting data of the second extracted store to the search request source terminal.

Abstract: In response to a distribution request from the terminal device 2 of the user, the distribution center 1 downloads and activates an install program in the terminal device 2 of the user. When the installation is completed, the install program issues a completion notification to the distribution center 1, and rental information is recorded in a rental database 12. When the contents are returned, an uninstallation program is downloaded and activated in the terminal device 2 of the user. When the uninstallation is completed, the uninstallation program issues a completion notification to the distribution center 1, and the rental information about the return is recorded in the rental database 12.

Abstract: A method for supporting sales of a commodity to a customer is disclosed. The method includes the steps of a) managing desired deficient commodity information including information of a deficient commodity desired by the customer in correspondence with a first discount rate of the deficient commodity and identification information of the customer, and b) discounting the desired deficient commodity based on the first discount rate in a case where the customer purchases the desired deficient commodity.

Abstract: A semiconductor device comprises: a semiconductor substrate; a field oxide film formed in the semiconductor substrate, the field oxide film having element forming regions on both sides thereof; a pair of MOS transistors formed in the element forming regions on both sides of the field oxide film, each of the transistors having a gate oxide film, a gate electrode and a pair of source/drain regions; an interlayer insulating film covering the semiconductor substrate, the field oxide film and the transistors; a local interconnect formed by embedding a conductive material in a first opening formed in the interlayer insulating film, the first opening being arranged above the field oxide film and having a greater width than the field oxide film, an inner one of the pair of source/drain regions of each of the pair of transistors being exposed to the first opening, the inner one of the pair of source/drain regions of one of the pair of transistors being electrically connected to the inner one of the pair of source/drai

Abstract: A semiconductor device comprises: a semiconductor substrate; a field oxide film formed in the semiconductor substrate, the field oxide film having element forming regions on both sides thereof; a pair of MOS transistors formed in the element forming regions on both sides of the field oxide film, each of the transistors having a gate oxide film, a gate electrode and a pair of source/drain regions; an interlayer insulating film covering the semiconductor substrate, the field oxide film and the transistors; a local interconnect formed by embedding a conductive material in a first opening formed in the interlayer insulating film, the first opening being arranged above the field oxide film and having a greater width than the field oxide film, an inner one of the pair of source/drain regions of each of the pair of transistors being exposed to the first opening, the inner one of the pair of source/drain regions of one of the pair of transistors being electrically connected to the inner one of the pair of source/drai