Abstract: The branching filter has the piezoelectric substrate having the main surface on which there are formed a transmission filter, which includes an input electrode and an antenna electrode, and a reception filter, which includes an output electrodes and the antenna electrode. The branching filter also has the mounting substrate having, on a first main surface, a first electrode group that is connected to the transmission filter and reception filter and that is formed symmetrical with respect to a line when viewed from the above, and also having, on a second main surface locating on the opposite side to the first main surface, a second electrode group that is connected to the circuit interconnects of an external circuit board and that is formed symmetrical with respect to a line when viewed from the above.

Abstract: To provide a branching filter enabling sharing of the same mounting substrate between the normal arrangement and the mirror arrangement that is symmetric to the normal arrangement of an electrode group formed on a main surface of a piezoelectric substrate and a method for manufacturing the same. The branching filter 1 has the piezoelectric substrate 20 having the main surface on which there are formed a transmission filter 26, which includes an input electrode 22 and an antenna electrode 23, and a reception filter 27, which includes an output electrodes 24, 25 and the antenna electrode 23.

Abstract: Provided is a demultiplexer capable of improving attenuation characteristic and isolation characteristic of a filter having a lower transmission frequency band among two filters having different transmission frequency bands, outside the transmission frequency band of a high-frequency side. A communication device using the demultiplexer is also disclosed. A first spiral wiring portion (55) and a sixth wiring portion (56) are formed so that an angle defined by a direction of a part (L1) of the first spiral wiring portion (55) and a direction of a part (L2) of the sixth spiral wiring portion (56) on a predetermined virtual plane is, for example, 0 degree and the direction of the current flowing in the part (L1) of the first spiral wiring portion (55) is opposite to the direction of the current flowing in the part (L2) if the sixth wiring portion (56).

Abstract: Provided is a demultiplexer capable of improving attenuation characteristic and isolation characteristic of a filter having a lower transmission frequency band among two filters having different transmission frequency bands, outside the transmission frequency band of a high-frequency side. A communication device using the demultiplexer is also disclosed. A first spiral wiring portion (55) and a sixth wiring portion (56) are formed so that an angle defined by a direction of a part (L1) of the first spiral wiring portion (55) and a direction of a part (L2) of the sixth spiral wiring portion (56) on a predetermined virtual plane is, for >example, 0 degree and the direction of the current flowing in the part (L1) of the first spiral wiring portion (55) is opposite to the direction of the current flowing in the part (L2) if the sixth wiring portion (56).

Abstract: Terminal electrodes 9 for carrying a high frequency device 3 are formed on a surface of a circuit board having its reverse surface covered with a reverse surface conductor layer 6, and a plurality of signal lines 2 for exchanging a signal between the high frequency device 3 and an external circuit are formed thereon. The terminal electrode 9 is arranged at the center of the circuit board, and the signal lines 2 radially extends from the terminal electrode 9. Electromagnetic interference between the signal lines 2 can be reduced, so that out-of-band attenuation characteristics and isolation characteristics can be satisfactorily exhibited in a case where the high frequency device 3 is a duplexer.

Abstract: After electrode patterning on an electrode forming surface of a piezoelectric substrate 2 (FIG. 1(b)), a conductor layer is formed on an electrode non-forming surface of the piezoelectric substrate 2 (FIG. 1(c)). After forming the conductor layer, the conductor layer formed on the other surface is removed (FIG. 1(f)) after at least one step (FIG. 1(e)), and thereafter, dicing for separation into elements and mounting on a mounting substrate are carried out. By removing all the conductor layer on the other surface of the piezoelectric substrate, the out-of-passband attenuation and isolation performance can be significantly improved.

Abstract: In a surface acoustic wave device, an excitation electrode 5 in a surface acoustic wave element is provided on a lower surface of a piezoelectric substrate 3, and the lower surface of the piezoelectric substrate 3 is disposed in a state where it is opposed to an upper surface of a mounting base member 2. The surface acoustic wave device comprises a through hole 9 penetrating between the upper surface and a lower surface of the mounting base member 2, a lead electrode 10 closing the through hole 9 and formed so as to extend to the lower surface of the mounting base member 2, and an insulator 11 covering the lead electrode 10 so as to expose its partial area 16.

Abstract: An IDT electrode 2 and an electrode pad 3 are formed on one principal face of a piezoelectric substrate 1 and a circular electrode 4 is formed so as to surround these components. The circular electrode 4 is connected to a radiating conductor 15 formed on a bottom face of a circuit board 11 through a via conductor 14 formed within the circuit board 11. Thus, since heat generated in the IDT electrode 2 is easy to be released to the outside through the circular electrode 4, the via conductor 14 and the radiating conductor 15, adverse effects due to the heat can be prevented, thereby improving high power durability.

Abstract: A conductor layer 10 is provided so as to prevent pyroelectric destruction occurring in the steps of manufacturing a surface acoustic wave element 1 on the other surface opposite to an IDT electrode formation surface of a piezoelectric substrate 2. At this time, the conductor layer 10 is formed, except for a region 5a opposed to an input electrode section 5 in a filter region 9 and/or a region 6a opposed to an output electrode section 6. This allows a coupling amount between the input electrode section 5 and the output electrode section 6 due to a parasitic capacitance formed between the input electrode section 5 and the output electrode section 6 in the filter region 9 to be reduced, thereby allowing the out-of-band attenuation characteristics of a surface acoustic wave device to be improved.

Abstract: In a surface acoustic wave device according to the present invention, a transmitting filter element TX and a receiving filter element RX are formed on one main surface of a piezoelectric substrate 300, and are mounted by face down on an upper surface of a circuit board 200. A ground electrode 322 in the receiving filter element RX is connected to three linear via conductors 221? formed on the circuit board 200, and a ground electrode 312 in the transmitting filter element TX is connected to a crank-shaped via conductor 211? formed on the circuit board 200.

Abstract: A plurality of surface acoustic wave elements, with an IDT electrode 2 and a pad electrode 3 formed on the principal surface of a piezoelectric substrate 1, are formed to be flip-chip mounted on a circuit board 5 and sealed using sealing resin 7. The circuit board 5 is diced integrally with the sealing resin 7 applying a rotating dicing blade 8 from the bottom surface side thereof to produce a plurality of surface acoustic wave devices. The side surfaces of the surface acoustic wave devices can be formed perpendicularly with dimensional accuracy without rounding or chipping an edge portion of the sealing resin 7.

Abstract: Terminal electrodes 9 for carrying a high frequency device 3 are formed on a surface of a circuit board having its reverse surface covered with a reverse surface conductor layer 6, and a plurality of signal lines 2 for exchanging a signal between the high frequency device 3 and an external circuit are formed thereon. The terminal electrode 9 is arranged at the center of the circuit board, and the signal lines 2 radially extends from the terminal electrode 9. Electromagnetic interference between the signal lines 2 can be reduced, so that out-of-band attenuation characteristics and isolation characteristics can be satisfactorily exhibited in a case where the high frequency device 3 is a duplexer.

Abstract: A plurality of surface acoustic wave elements, with an IDT electrode 2 and a pad electrode 3 formed on the principal surface of a piezoelectric substrate 1, are formed to be flip-chip mounted on a circuit board 5 and sealed using sealing resin 7. The circuit board 5 is diced integrally with the sealing resin 7 applying a rotating dicing blade 8 from the bottom surface side thereof to produce a plurality of surface acoustic wave devices. The side surfaces of the surface acoustic wave devices can be formed perpendicularly with dimensional accuracy without rounding or chipping an edge portion of the sealing resin 7.

Abstract: After electrode patterning on an electrode forming surface of a piezoelectric substrate 2 (FIG. 1(b)), a conductor layer is formed on an electrode non-forming surface of the piezoelectric substrate 2 (FIG. 1(c)). After forming the conductor layer, the conductor layer formed on the other surface is removed (FIG. 1(f)) after at least one step (FIG. 1(e)), and thereafter, dicing for separation into elements and mounting on a mounting substrate are carried out. By removing all the conductor layer on the other surface of the piezoelectric substrate, the out-of-passband attenuation and isolation performance can be significantly improved.

Abstract: An IDT electrode 2 and an electrode pad 3 are formed on one principal face of a piezoelectric substrate 1 and a circular electrode 4 is formed so as to surround these components. The circular electrode 4 is connected to a radiating conductor 15 formed on a bottom face of a circuit board 11 through a via conductor 14 formed within the circuit board 11. Thus, since heat generated in the IDT electrode 2 is easy to be released to the outside through the circular electrode 4, the via conductor 14 and the radiating conductor 15, adverse effects due to the heat can be prevented, thereby improving high power durability.

Abstract: A conductor layer 10 is provided so as to prevent pyroelectric destruction occurring in the steps of manufacturing a surface acoustic wave element 1 on the other surface opposite to an IDT electrode formation surface of a piezoelectric substrate 2. At this time, the conductor layer 10 is formed, except for a region 5a opposed to an input electrode section 5 in a filter region 9 and/or a region 6a opposed to an output electrode section 6. This allows a coupling amount between the input electrode section 5 and the output electrode section 6 due to a parasitic capacitance formed between the input electrode section 5 and the output electrode section 6 in the filter region 9 to be reduced, thereby allowing the out-of-band attenuation characteristics of a surface acoustic wave device to be improved.

Abstract: In a surface acoustic wave device according to the present invention, a transmitting filter element TX and a receiving filter element RX are formed on one main surface of a piezoelectric substrate 300, and are mounted by face down on an upper surface of a circuit board 200. A ground electrode 322 in the receiving filter element RX is connected to three linear via conductors 221? formed on the circuit board 200, and a ground electrode 312 in the transmitting filter element TX is connected to a crank-shaped via conductor 211? formed on the circuit board 200.

Abstract: In a surface acoustic wave device, an excitation electrode 5 in a surface acoustic wave element is provided on a lower surface of a piezoelectric substrate 3, and the lower surface of the piezoelectric substrate 3 is disposed in a state where it is opposed to an upper surface of a mounting base member 2. The surface acoustic wave device comprises a through hole 9 penetrating between the upper surface and a lower surface of the mounting base member 2, a lead electrode 10 closing the through hole 9 and formed so as to extend to the lower surface of the mounting base member 2, and an insulator 11 covering the lead electrode 10 so as to expose its partial area 16.