Abstract: Provided is a charged particle beam device that is capable of suppressing an field-of-view deviation occurring when observing a tilted image or a left-right parallax-angle image acquired by irradiating a tilted beam on a sample while continuously compensating a focus. By means of an aligner for compensating field-of-view (54) installed between an objective lens (7) that focuses a primary charged particle beam on a surface of the sample (10), and a deflector for controlling tilt angle (53) that tilts the primary charged particle beam, the field-of-view deviation occurring during tilting of the primary charged particle beam is suppressed based on an amount of compensation required by a tilt angle of the deflector for controlling tilt angle (53), lens conditions, and a distance between the objective lens (7) and the sample (10), in conjunction with a focus compensation of the objective lens (7).

Abstract: A charged particle beam adjustment assistance device that can assist work to adjust a charged particle beam apparatus having a three-dimensional observing function and reduce human labor and man-hours required for adjustment value inputting is provided. An adjustment value acquiring unit generates optimal three-dimensional adjustment value information on the basis of two-dimensional adjustment value information and two/three-dimensional adjustment value correspondence information generated according to information inputted from a charged particle beam adjuster terminal, transmits the three-dimensional adjustment value information to the charged particle beam apparatus, and sets the three-dimensional adjustment value information therein. Therefore, the charged particle beam adjuster can reduce adjusting work required for three-dimensional observation and facilitate the work of observing three-dimensional images.

Abstract: A control device (50) for a charged particle beam device (100) tilts the irradiation axis of a primary electron beam (4) to the left, straight, or to the right via tilting coils (11, 12) each time the primary electron beam (4) scans the surface of a sample (15) over a single scanning line. When the irradiation axis is changed, the focal point of the primary electron beam (4) is adjusted by a focal point-adjusting coil (14) based on the tilt of the irradiation axis in order to take a left-tilted observation image, a non-tilted observation image or a right-tilted observation image of the surface of a sample (15) for each scanning line. The left-tilted observation images, non-tilted observation images and right-tilted observation images for the scanning lines obtained up to this point are simultaneously displayed on the same display device (31). In this way, focused non-tilted observation images and focused tilted observation images can be taken and displayed nearly simultaneously.

Abstract: A control device (50) for a charged particle beam device (100) tilts the irradiation axis of a primary electron beam (4) to the left, straight, or to the right via tilting coils (11, 12) each time the primary electron beam (4) scans the surface of a sample (15) over a single scanning line. When the irradiation axis is changed, the focal point of the primary electron beam (4) is adjusted by a focal point-adjusting coil (14) based on the tilt of the irradiation axis in order to take a left-tilted observation image, a non-tilted observation image or a right-tilted observation image of the surface of a sample (15) for each scanning line. The left-tilted observation images, non-tilted observation images and right-tilted observation images for the scanning lines obtained up to this point are simultaneously displayed on the same display device (31). In this way, focused non-tilted observation images and focused tilted observation images can be taken and displayed nearly simultaneously.

Abstract: Provided is a charged particle beam device that is capable of suppressing an field-of-view deviation occurring when observing a tilted image or a left-right parallax-angle image acquired by irradiating a tilted beam on a sample while continuously compensating a focus. By means of an aligner for compensating field-of-view (54) installed between an objective lens (7) that focuses a primary charged particle beam on a surface of the sample (10), and a deflector for controlling tilt angle (53) that tilts the primary charged particle beam, the field-of-view deviation occurring during tilting of the primary charged particle beam is suppressed based on an amount of compensation required by a tilt angle of the deflector for controlling tilt angle (53), lens conditions, and a distance between the objective lens (7) and the sample (10) , in conjunction with a focus compensation of the objective lens (7).

Abstract: In a VP-SEM that uses gas multiplication induced within a low-vacuum sample chamber and uses a method of detecting a positive displacement current, a secondary electron detector for the VP-SEM that responds at high speed, which can acquire a TV-Scan rate image at a low cost while saving a space is provided. A secondary electron detector is formed by forming the electron supplying electrode and the detection electrode on the flexible thin film type substrate such as a polyimide film, etc., by an etching method. Thereby, the space can be saved while realizing low cost due to mass production. Further, the ion horizontally moving with respect to the surface of the secondary electron detector is detected and the ion moving in a vertical direction returned to the sample holder is not detected, making it possible to realize a high-speed response.

Abstract: In a VP-SEM that uses gas multiplication induced within a low-vacuum sample chamber and uses a method of detecting a positive displacement current, a secondary electron detector for the VP-SEM that responds at high speed, which can acquire a TV-Scan rate image at a low cost while saving a space is provided. A secondary electron detector is formed by forming the electron supplying electrode and the detection electrode on the flexible thin film type substrate such as a polyimide film, etc., by an etching method. Thereby, the space can be saved while realizing low cost due to mass production. Further, the ion horizontally moving with respect to the surface of the secondary electron detector is detected and the ion moving in a vertical direction returned to the sample holder is not detected, making it possible to realize a high-speed response.