Abstract: A power module according to the present invention switches an operation mode between a control mode where an ON/OFF operation of a switching element having a first electrode, a second electrode, and a third electrode is controlled, and a deterioration determination mode where the deterioration is determined based on information including ?Vgs based on information including a threshold voltage detected before a stress current is supplied to the switching element and a threshold voltage detected after the stress current is supplied to the switching element. According to the power module of the present invention, the deterioration can be determined during an operation time and hence, breaking of the device can be prevented, and operation efficiency of the power module can be increased, and a manufacturing cost of the power module can be lowered.

Abstract: A switching element control circuit includes: a third electrode voltage control part which controls a third electrode voltage; a first electrode current detection part which detects a first electrode current which flows through the switching element; a memory part which stores information including an initial threshold voltage and an initial first electrode current, and a drain current characteristic of a threshold voltage; and a threshold voltage calculation part which calculates a threshold voltage at a time of operating the switching element based on information including the first electrode current, the initial threshold voltage, and an initial first electrode current, and information relating to the first electrode current characteristic of the threshold voltage, wherein the third electrode voltage control part controls the third electrode voltage based on a threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part.

Abstract: A semiconductor switch control circuit configured to perform an ON/OFF control of a semiconductor switch and includes: a pulse signal generating part configured to generate a pulse signal; a drive current generating part configured to generate a drive current based on the pulse signal which the pulse signal generating part generates and supplies the drive current to a gate electrode of the semiconductor switch; a gate voltage detecting part configured to detect a gate voltage VGS of the semiconductor switch; and a drive current control part configured to control the drive current which the drive current generating part generates based on the pulse signal which the pulse signal generating part generates and the gate voltage VGS which the gate voltage detecting part detects.

Abstract: A power conversion device according to the present invention is provided with two or more sets of power modules each of which includes a switching element and a switching element control circuit having a third electrode voltage control part and a temperature detection part. The power modules PM1, PM2 are connected in parallel to each other. The switching element control circuit includes a temperature comparison part which calculates an average operation temperature of the switching element, and compares an operation temperature of the corresponding switching element and the average operation temperature. The third electrode voltage control part controls a third electrode voltage based on information including an average operation temperature, an operation temperature of the switching element, and a threshold voltage during operation.

Abstract: A switching element control circuit: a third electrode voltage control part; a temperature detection part; a first electrode current detection part; a memory part which stores information including an initial threshold voltage and an operation temperature/first electrode current characteristic of the threshold voltage; and a threshold voltage calculation part which calculates a threshold voltage at the time of operating the switching element based on information including the initial threshold voltage, the operation temperature of the switching element, and a first electrode current, and information relating to an operation temperature/first electrode current characteristic of a threshold voltage, wherein the third electrode voltage control part controls the third electrode voltage based on a threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part.

Abstract: A semiconductor switch control circuit includes: a pulse signal generating part configured to generate a pulse signal which becomes a time reference for performing an ON/OFF control of a semiconductor switch; a drive current generating part configured to generate a drive current based on the pulse signal which the pulse signal generating part generates and to supply the drive current to a gate electrode of the semiconductor switch; a current detecting part configured to detect a drain current or a source current of the semiconductor switch; and a drive current control part configured to have a function of controlling a drive current which the drive current generating part generates based on the pulse signal which the pulse signal generating part generates and the current which the current detecting part detects.

Abstract: A semiconductor switch control circuit includes: a pulse signal generating part configured to generate a pulse signal which becomes a time reference for performing an ON/OFF control of a semiconductor switch; a drive current generating part configured to generate a drive current based on the pulse signal which the pulse signal generating part generates and to supply the drive current to a gate electrode of the semiconductor switch; a current detecting part configured to detect a drain current or a source current of the semiconductor switch; and a drive current control part configured to have a function of controlling a drive current which the drive current generating part generates based on the pulse signal which the pulse signal generating part generates and the current which the current detecting part detects.

Abstract: A semiconductor module includes: a semiconductor substrate; a switching element having a first electrode, a second electrode, and a gate electrode, and the switching element configured to perform turning on/off between the first electrode and the second electrode in response to applying of a predetermined gate voltage to the gate electrode; a control circuit part configured to control the gate voltage; and a current detection element configured to detect a current which flows between the first electrode and the second electrode of the switching element, wherein the switching element, the control circuit part, and the current detection element are mounted on the semiconductor substrate, and the current detection element is formed of a Rogowski coil.

Abstract: A power module includes a switching element, a temperature detection part which detects an operation temperature T of the switching element, a control electrode voltage control part which controls a control electrode voltage based on a threshold voltage Vth during an operation of the switching element which is calculated based on information including the operation temperature T of the switching element detected by the temperature detection part, and a switching speed control part which controls a switching speed of the switching element based on the operation temperature T of the switching element detected by the temperature detection part.

Abstract: A semiconductor module includes: a semiconductor substrate; a switching element having a first electrode, a second electrode, and a gate electrode, and the switching element configured to perform turning on/off between the first electrode and the second electrode in response to applying of a predetermined gate voltage to the gate electrode; a control circuit part configured to control the gate voltage; and a current detection element configured to detect a current which flows between the first electrode and the second electrode of the switching element, wherein the switching element, the control circuit part, and the current detection element are mounted on the semiconductor substrate, and the current detection element is formed of a Rogowski coil.

Abstract: A switching element control circuit includes: a third electrode voltage control part which controls a third electrode voltage; a first electrode current detection part which detects a first electrode current which flows through the switching element; a memory part which stores information including an initial threshold voltage and an initial first electrode current, and a drain current characteristic of a threshold voltage; and a threshold voltage calculation part which calculates a threshold voltage at a time of operating the switching element based on information including the first electrode current, the initial threshold voltage, and an initial first electrode current, and information relating to the first electrode current characteristic of the threshold voltage, wherein the third electrode voltage control part controls the third electrode voltage based on a threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part.

Abstract: A switching element control circuit: a third electrode voltage control part; a temperature detection part; a first electrode current detection part; a memory part which stores information including an initial threshold voltage and an operation temperature/first electrode current characteristic of the threshold voltage; and a threshold voltage calculation part which calculates a threshold voltage at the time of operating the switching element based on information including the initial threshold voltage, the operation temperature of the switching element, and a first electrode current, and information relating to an operation temperature/first electrode current characteristic of a threshold voltage, wherein the third electrode voltage control part controls the third electrode voltage based on a threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part.

Abstract: A switching element control circuit includes a third electrode voltage control part which controls a third electrode voltage; a temperature detection part which detects an operation temperature of the switching element; a memory part which stores an initial threshold voltage, an initial temperature when the initial threshold voltage is measured, and a temperature characteristic of a threshold voltage; and a threshold voltage calculation part which calculates a threshold voltage at the time of operating the switching element based on information including the operation temperature of the switching element, the initial threshold voltage, and an initial temperature when the initial threshold voltage is measured, and information relating to a temperature characteristic of a threshold voltage, wherein the third electrode voltage control part controls the third electrode voltage based on a threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part.

Abstract: A power module includes a switching element, a temperature detection part which detects an operation temperature T of the switching element, a control electrode voltage control part which controls a control electrode voltage based on a threshold voltage Vth during an operation of the switching element which is calculated based on information including the operation temperature T of the switching element detected by the temperature detection part, and a switching speed control part which. controls a switching speed of the switching element based on the operation temperature T of the switching element detected by the temperature detection part.

Abstract: A switching element control circuit is configured to perform a measurement mode in which a threshold voltage of a switching element is measured and a control mode in which an ON/OFF operation of the switching element is controlled in a switching manner. The switching element control circuit includes: a threshold voltage measurement power source; a third electrode voltage control part; an ON/OFF state determination part; and a memory part which stores the third electrode voltage applied to the third electrode as a threshold voltage of the switching element. The third electrode voltage control part controls, in the control mode, the third electrode voltage based on information including the threshold voltage stored in the memory part at the time of bringing the switching element into an ON state.

Abstract: A power conversion device according to the present invention is provided with two or more sets of power modules each of which includes a switching element and a switching element control circuit having a third electrode voltage control part and a temperature detection part. The power modules PM1, PM2 are connected in parallel to each other. The switching element control circuit includes a temperature comparison part which calculates an average operation temperature of the switching element, and compares an operation temperature of the corresponding switching element and the average operation temperature. The third electrode voltage control part controls a third electrode voltage based on information including an average operation temperature, an operation temperature of the switching element, and a threshold voltage during operation.

Abstract: A semiconductor switch control circuit configured to perform an ON/OFF control of a semiconductor switch and includes: a pulse signal generating part configured to generate a pulse signal; a drive current generating part configured to generate a drive current based on the pulse signal which the pulse signal generating part generates and supplies the drive current to a gate electrode of the semiconductor switch; a gate voltage detecting part configured to detect a gate voltage VGS of the semiconductor switch; and a drive current control part configured to control the drive current which the drive current generating part generates based on the pulse signal which the pulse signal generating part generates and the gate voltage VGS which the gate voltage detecting part detects.

Abstract: A power module according to the present invention switches an operation mode between a control mode where an ON/OFF operation of a switching element having a first electrode, a second electrode, and a third electrode is controlled, and a deterioration determination mode where the deterioration is determined based on information including ?Vgs based on information including a threshold voltage detected before a stress current is supplied to the switching element and a threshold voltage detected after the stress current is supplied to the switching element. According to the power module of the present invention, the deterioration can be determined during an operation time and hence, breaking of the device can be prevented, and operation efficiency of the power module can be increased, and a manufacturing cost of the power module can be lowered.

Abstract: A switching element control circuit includes a third electrode voltage control part which controls a third electrode voltage; a temperature detection part which detects an operation temperature of the switching element; a memory part which stores an initial threshold voltage, an initial temperature when the initial threshold voltage is measured, and a temperature characteristic of a threshold voltage; and a threshold voltage calculation part which calculates a threshold voltage at the time of operating the switching element based on information including the operation temperature of the switching element, the initial threshold voltage, and an initial temperature when the initial threshold voltage is measured, and information relating to a temperature characteristic of a threshold voltage, wherein the third electrode voltage control part controls the third electrode voltage based on a threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part.

Abstract: A switching element control circuit is configured to perform a measurement mode in which a threshold voltage of a switching element is measured and a control mode in which an ON/OFF operation of the switching element is controlled in a switching manner. The switching element control circuit includes: a threshold voltage measurement power source; a third electrode voltage control part; an ON/OFF state determination part; and a memory part which stores the third electrode voltage applied to the third electrode as a threshold voltage of the switching element. The third electrode voltage control part controls, in the control mode, the third electrode voltage based on information including the threshold voltage stored in the memory part at the time of bringing the switching element into an ON state.