Abstract: A connection destination switching control method executed by a communication apparatus, the connection destination switching control method comprising: a data acquisition step of acquiring observed values of received power of signals transmitted from a base station; a prediction processing step of predicting future received power by using the observed values acquired in the data acquisition step as input data into a prediction model; and a connection destination switching processing step of executing control for handover based on the future received power predicted in the prediction processing step.

Abstract: A semiconductor memory device includes a plurality of word lines, a first select gate line, a second select gate line, a first semiconductor layer, a third select gate line, a fourth select gate line, a second semiconductor layer, and a word line contact electrode. The first select gate line and the third select gate line are farther from the substrate than the plurality of word lines. The second select gate line and the fourth select gate line are closer to the substrate than the plurality of word lines. The first semiconductor layer is opposed to the plurality of word lines, the first select gate line, and the second select gate line. The second semiconductor layer is opposed to the plurality of word lines, the third select gate line, and the fourth select gate line. The word line contact electrode is connected to one of the plurality of word lines.