Abstract: The present invention provides a light-emitting diode that includes two electrodes provided on a light-emitting surface, and exhibits high light extraction efficiency and high-brightness.

Abstract: A light-emitting diode having a high output, high efficiency, and a long service life under a high-humidity environment is provided. The light-emitting diode (1) includes a compound semiconductor layer (2) having a light-emitting section (7), ohmic electrodes (4, 5) provided on the main light extraction surface of the compound semiconductor layer (2), and an electrode protection layer (6) for protecting the ohmic electrodes (4, 5), wherein the Al concentrations of the surfaces (2a, 2b) of the compound semiconductor layer (2), which include the main light extraction surface, are 20% or less and the As concentration of the surfaces (2a, 2b) is less than 1%, and the electrode protection layer (6) has a two-layer structure composed of a first protective film (12) provided so as to cover the ohmic electrodes (4, 5) and a second protective film (13) provided so as to cover at least an end portion of the first protective film (12).

Abstract: A light-emitting diode (10) includes a transparent substrate and a compound semiconductor layer that contains a light-emitting part (12) containing a light-emitting layer (133) formed of (AlXGa1-X)YIn1-YP (0?X?1 and 0<Y?1) joined to the transparent substrate (14). The light-emitting diode (10) has on a main light-extracting surface thereof a first electrode (15) and a second electrode (16) different in polarity from the first electrode. The transparent substrate has side faces that are a first side face (142) roughly perpendicular to a light-emitting surface of the light-emitting layer on a side near the light-emitting layer and a second side face (143) inclined relative to the light-emitting surface on a side distant from the light-emitting layer and coarsened with irregularities falling in a range of 0.05 ?m to 3 ?m.

Abstract: The present invention provides a light-emitting diode that includes two electrodes provided on a light-emitting surface, and exhibits high light extraction efficiency and high-brightness.

Abstract: A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.

Abstract: A light-emitting diode having a high output, high efficiency, and a long service life under a high-humidity environment is provided. The light-emitting diode (1) includes a compound semiconductor layer (2) having a light-emitting section (7), ohmic electrodes (4, 5) provided on the main light extraction surface of the compound semiconductor layer (2), and an electrode protection layer (6) for protecting the ohmic electrodes (4, 5), wherein the Al concentrations of the surfaces (2a, 2b) of the compound semiconductor layer (2), which include the main light extraction surface, are 20% or less and the As concentration of the surfaces (2a, 2b) is less than 1%, and the electrode protection layer (6) has a two-layer structure composed of a first protective film (12) provided so as to cover the ohmic electrodes (4, 5) and a second protective film (13) provided so as to cover at least an end portion of the first protective film (12).

Abstract: A light-emitting diode includes a transparent substrate and a compound semiconductor layer that includes a light-emitting unit and is bonded to the transparent substrate. The light-emitting unit includes a light-emitting layer represented by a composition formula (AlXGa1-X)YIn1-YP (0?X?1, 0<Y?1). A first electrode and a second electrode having a polarity different from that of the first electrode are provided on a main light-emitting surface of the light-emitting diode. The second electrode is formed on the compound semiconductor layer so as to be opposite to the first electrode with a light-emitting layer interposed therebetween. The side surface of the transparent substrate includes a first side surface that is close to the light-emitting layer and is substantially vertical to a light-emitting surface of the light-emitting layer and a second side surface that is distanced away from the light-emitting layer and is inclined with respect to the light-emitting surface.

Abstract: A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.

Abstract: A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.

Abstract: A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.

Abstract: A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.

Abstract: A transparent-substrate light-emitting diode (10) has a light-emitting layer (133) made of a compound semiconductor, wherein the area (A) of a light-extracting surface having formed thereon a first electrode (15) and a second electrode (16) differing in polarity from the first electrode (15), the area (B) of a light-emitting layer (133) formed as approximating to the light-extracting surface and the area (C) of the back surface of a light-emitting diode falling on the side opposite the side for forming the first electrode (15) and the second electrode (16) are so related as to satisfy the relation of A>C>B. The light-emitting diode (10) of this invention, owing to the relation of the area of the light-emitting layer (133) and the area of the back surface (23) of the transparent substrate and the optimization of the shape of a side face of the transparent substrate (14), exhibits high brightness and high exoergic property never attained heretofore and fits use with an electric current of high degree.

Abstract: A light-emitting diode (10) includes a transparent substrate and a compound semiconductor layer that contains a light-emitting part (12) containing a light-emitting layer (133) formed of (AlXGa1?X)YIn1?YP; in which 0?X?1 and 0<Y?1), and that is joined to the transparent substrate (14). wherein the light-emitting diode (10) has on a main light-extracting surface thereof a first electrode (15) and a second electrode (16) different in polarity from the first electrode, the transparent substrate has side faces that are a first side face (142) roughly perpendicular to a light-emitting surface of the light-emitting layer on a side near the light-emitting layer and a second side face (143) inclined relative to the light-emitting surface on a side distant from the light-emitting layer and coarsened with irregularities falling in a range of 0.05 ?m to 3 ?m The light-emitting diode provided on the light-extracting surface with the two electrodes manifests a high efficiency of light extraction and high brightness.

Abstract: A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.

Abstract: A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.

Abstract: An LED (10) includes a compound semiconductor layer (13) that contains a light-emitting part and an alkali glass substrate (150) that contains at least 1 mass % of one element selected from sodium, calcium, barium and potassium and is transparent to light-emitting wavelength of the part. The substrate is fixed or joined in contact with the semiconductor layer. In a method for producing the diode (10), the semiconductor layer (13) is grown on a semiconductor substrate (1) untransparent to the wavelength, the grown semiconductor layer and alkali glass substrate are joined by the anode junction method, the untransparent substrate is removed, a first ohmic electrode (15) having a first polarity is formed on part of a main surface of the semiconductor layer, a second ohmic electrode (16) is formed on the semiconductor layer having a second polarity, and the first ohmic electrode and semiconductor layer are covered with a metal reflecting layer (14).

Abstract: A semiconductor light-emitting device includes a semiconductor substrate that has a rear surface formed with a first electrode, a semiconductor layer that includes a light-emitting portion and is formed on the semiconductor substrate, a plurality of dispersed electrodes that are individually formed on a part of the surface of the semiconductor layer to make ohmic contact with the semiconductor layer, a transparent conductive film that covers the surface of the semiconductor layer and the dispersed electrodes to electrically conduct with the dispersed electrodes, and a pad electrode that is formed on a part of the surface of the transparent conductive film to electrically conduct with the transparent conductive film.

Abstract: A semiconductor light-emitting device includes a semiconductor substrate that has a rear surface formed with a first electrode, a semiconductor layer that includes a light-emitting portion and is formed on the semiconductor substrate, a plurality of dispersed electrodes that are individually formed on a part of the surface of the semiconductor layer to make ohmic contact with the semiconductor layer, a transparent conductive film that covers the surface of the semiconductor layer and the dispersed electrodes to electrically conduct with the dispersed electrodes, and a pad electrode that is formed on a part of the surface of the transparent conductive film to electrically conduct with the transparent conductive film.

Abstract: A semiconductor light-emitting device includes a semiconductor substrate that has a rear surface formed with a first electrode, a semiconductor layer that includes a light-emitting portion and is formed on the semiconductor substrate, a plurality of dispersed electrodes that are individually formed on a part of the surface of the semiconductor layer to make ohmic contact with the semiconductor layer, a transparent conductive film that covers the surface of the semiconductor layer and the dispersed electrodes to electrically conduct with the dispersed electrodes, and a pad electrode that is formed on a part of the surface of the transparent conductive film to electrically conduct with the transparent conductive film.