Abstract: The present invention relates to an oxidation-induced highly-functional self-healing ceramic composition, a method for producing the ceramic composition, a use of the ceramic composition and a method for achieving the enhancement of the functionality of the ceramic composition, by focusing on a repairing stage and a remodeling state in a self-healing process and by carrying out elemental and structural designing of an oxidation-induced self-healing ceramic composition for the purpose of speeding up these stages.

Abstract: A carburization device includes a heating furnace which heats a material, a transfer mechanism, an alcohol vapor generator, an alcohol vapor spraying portion, a quenching tank, and an exhaust heat intake tube. The transfer mechanism moves a plurality of materials. The alcohol vapor generator uses part of heat generated by the heating furnace as a heat source. As the alcohol vapor spraying portion repeats a vapor spraying step and a diffusion step a plurality of times in the heating furnace. In the vapor spraying step, by spraying alcohol vapor on the material which moves inside the heating furnace, carbon in the alcohol is adsorbed to the material. In the diffusion step, an interval for diffusing the carbon adsorbed to the material is taken.

Abstract: The present invention relates to an oxidation-induced highly-functional self-healing ceramic composition, a method for producing the ceramic composition, a use of the ceramic composition and a method for achieving the enhancement of the functionality of the ceramic composition, by focusing on a repairing stage and a remodeling state in a self-healing process and by carrying out elemental and structural designing of an oxidation-induced self-healing ceramic composition for the purpose of speeding up these stages.

Abstract: A carburization device includes a heating furnace which heats a material, a transfer mechanism, an alcohol vapor generator, an alcohol vapor spraying portion, a quenching tank, and an exhaust heat intake tube. The transfer mechanism moves a plurality of materials. The alcohol vapor generator uses part of heat generated by the heating furnace as a heat source. As the alcohol vapor spraying portion repeats a vapor spraying step and a diffusion step a plurality of times in the heating furnace. In the vapor spraying step, by spraying alcohol vapor on the material which moves inside the heating furnace, carbon in the alcohol is adsorbed to the material. In the diffusion step, an interval for diffusing the carbon adsorbed to the material is taken.

Abstract: A highly crystalline aluminum nitride multi-layered substrate comprising a single-crystal ?-alumina substrate, an aluminum oxynitride layer and a highly crystalline aluminum nitride film as the outermost layer which are formed in the mentioned order, wherein the aluminum oxynitride layer has a threading dislocation density of 6.3×107/cm2 or less and a crystal orientation expressed by the half-value width of its rocking curve of 4,320 arcsec or less; and a production process thereof.

Abstract: A single crystalline aluminum nitride laminated substrate comprising a single crystalline ?-Al2O3 substrate such as a sapphire substrate, an aluminum oxynitride layer formed on the substrate and a single crystalline aluminum nitride film as the outermost layer, wherein the dislocation density in the single crystalline aluminum nitride is 108/cm2 or less. The above single crystalline aluminum nitride laminated substrate is formed by nitriding the substrate by heating in the presence of carbon, nitrogen and carbon monoxide. The above single crystalline aluminum nitride film has a law dislocation density, little lattice mismatching and excellent crystallinity. A Group III element nitride film having excellent luminous efficiency can be formed on this aluminum nitride film. The above laminated substrate is used in a base substrate for a Group III element nitride film, a light emitting device and a surface acoustic wave device.

Abstract: A highly crystalline aluminum nitride multi-layered substrate comprising a single-crystal ?-alumina substrate, an aluminum oxynitride layer and a highly crystalline aluminum nitride film as the outermost layer which are formed in the mentioned order, wherein the aluminum oxynitride layer has a threading dislocation density of 6.3×107/cm2 or less and a crystal orientation expressed by the half-value width of its rocking curve of 4,320 arcsec or less; and a production process thereof.

Abstract: A single crystalline aluminum nitride laminated substrate comprising a single crystalline &agr;-Al2O3 substrate such as a sapphire substrate, an aluminum oxynitride layer formed on the substrate and a single crystalline aluminum nitride film as the outermost layer, wherein the dislocation density in the single crystalline aluminum nitride is 108/cm2 or less.

Abstract: A single crystalline aluminum nitride laminated substrate comprising a single crystalline &agr;-Al2O3 substrate such as a sapphire substrate, an aluminum oxynitride layer formed on the substrate and a single crystalline aluminum nitride film as the outermost layer, wherein the dislocation density in the single crystalline aluminum nitride is 108/cm2 or less. The above single crystalline aluminum nitride laminated substrate is formed by nitriding the substrate by heating in the presence of carbon, nitrogen and carbon monoxide. The above single crystalline aluminum nitride film has a law dislocation density, little lattice mismatching and excellent crystallinity. A Group III element nitride film having excellent luminous efficiency can be formed on this aluminum nitride film. The above laminated substrate is used in a base substrate for a Group III element nitride film, a light emitting device and a surface acoustic wave device.

Abstract: A single crystalline aluminum nitride laminated substrate comprising a single crystalline &agr;-Al2O3 substrate such as a sapphire substrate, an aluminum oxynitride layer formed on the substrate and a single crystalline aluminum nitride film as the outermost layer, wherein the dislocation density in the single crystalline aluminum nitride is 108/cm2 or less.