Patents by Inventor Wataru Nishida

Wataru Nishida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250036020
    Abstract: A reflective mask blank includes: a substrate, a multilayer reflective film including molybdenum layers and silicon layers alternately and being configured to reflect EUV light, an intermediate film, a protective film, and an absorber film, in this order, in which the intermediate film includes silicon and nitrogen, an atomic weight ratio of a content of the nitrogen to a content of the silicon is 0.22 to 0.40 or 0.15 or less, the protective film includes one or more layers selected from the group consisting of a layer including rhodium and a layer including a rhodium-containing material, and the rhodium-containing material includes rhodium and one or more elements selected from the group consisting of boron, carbon, nitrogen, oxygen, silicon, titanium, zirconium, niobium, molybdenum, ruthenium, palladium, tantalum, and iridium.
    Type: Application
    Filed: October 9, 2024
    Publication date: January 30, 2025
    Applicant: AGC Inc.
    Inventors: Wataru NISHIDA, Daijiro AKAGI, Hiroaki IWAOKA, Hiroshi HANEKAWA, Taiga FUDETANI, Masaru HORI, Takayoshi TSUTSUMI
  • Publication number: 20240427227
    Abstract: A reflective mask blank for EUV lithography includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light. The substrate, the multilayer reflective film, the protection film, and the absorption film are arranged in this order from bottom to top. The protection film includes an upper layer made of a rhodium-based material containing Rh as a main component that contains only Rh, or contains Rh and at least one element selected from a group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti; and a lower layer satisfying a condition k<?0.15n+0.16 in an EUV region where n represents a refractive index and k represents an extinction coefficient.
    Type: Application
    Filed: September 3, 2024
    Publication date: December 26, 2024
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hiroaki IWAOKA, Wataru NISHIDA, Ichiro ISHIKAWA, Kenichi SASAKI
  • Patent number: 12105412
    Abstract: A reflective mask blank for EUV lithography includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light. The substrate, the multilayer reflective film, the protection film, and the absorption film are arranged in this order from bottom to top. The protection film includes an upper layer made of a rhodium-based material containing Rh as a main component that contains only Rh, or contains Rh and at least one element selected from a group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti; and a lower layer satisfying a condition k<?0.15n+0.16 in an EUV region where n represents a refractive index and k represents an extinction coefficient.
    Type: Grant
    Filed: February 16, 2024
    Date of Patent: October 1, 2024
    Assignee: AGC Inc.
    Inventors: Daijiro Akagi, Hiroaki Iwaoka, Wataru Nishida, Ichiro Ishikawa, Kenichi Sasaki
  • Publication number: 20240272541
    Abstract: A reflective mask blank for EUV lithography includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light. The substrate, the multilayer reflective film, the protection film, and the absorption film are arranged in this order from bottom to top. The protection film includes an upper layer made of a rhodium-based material containing Rh as a main component that contains only Rh, or contains Rh and at least one element selected from a group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti; and a lower layer satisfying a condition k<?0.15n+0.16 in an EUV region where n represents a refractive index and k represents an extinction coefficient.
    Type: Application
    Filed: February 16, 2024
    Publication date: August 15, 2024
    Applicant: AGC Inc.
    Inventors: Daijiro AKAGI, Hiroaki IWAOKA, Wataru NISHIDA, Ichiro ISHIKAWA, Kenichi SASAKI
  • Publication number: 20240231215
    Abstract: A reflective mask blank includes: a substrate; a Mo/Si multilayer reflection layer formed by alternately laminating a molybdenum (Mo) layer and a silicon (Si) layer on or above the substrate; an intermediate layer on or above the Mo/Si multilayer reflection layer; a barrier layer on or above the intermediate layer; a protective layer on or above the barrier layer; and an absorption layer on or above the protective layer.
    Type: Application
    Filed: January 4, 2024
    Publication date: July 11, 2024
    Applicant: AGC Inc.
    Inventors: Wataru NISHIDA, Masaru HORI, Takayoshi TSUTSUMI
  • Publication number: 20240134267
    Abstract: A reflective mask blank includes: a substrate; a Mo/Si multilayer reflection layer formed by alternately laminating a molybdenum (Mo) layer and a silicon (Si) layer on or above the substrate; an intermediate layer on or above the Mo/Si multilayer reflection layer; a barrier layer on or above the intermediate layer; a protective layer on or above the barrier layer; and an absorption layer on or above the protective layer.
    Type: Application
    Filed: January 4, 2024
    Publication date: April 25, 2024
    Applicant: AGC Inc.
    Inventors: Wataru NISHIDA, Masaru HORI, Takayoshi TSUTSUMI
  • Publication number: 20150246845
    Abstract: A method for forming a SiO2 thin film on a glass substrate by an online atmospheric pressure CVD method, which uses, as a raw material gas supply means, a post mixing type raw material supply means of separately supplying a process gas 1 which contains monosilane (SiH4) as a main raw material gas and a process gas 2 which contains oxygen (O2) as an auxiliary raw material gas and mixing the process gases 1 and 2 on the glass substrate, wherein the flow rate of the monosilane (SiH4) per unit width is at least 1.0 NL/minĀ·m, and the process gas 1 contains ethylene (C2H4) in an amount such that the concentration ratio to the monosilane (SiH4) (C2H4 (mol %)/SiH4 (mol %)) is at most 3.2, whereby the deposition rate for forming a SiO2 thin film is improved.
    Type: Application
    Filed: May 19, 2015
    Publication date: September 3, 2015
    Applicant: Asahi Glass Company, Limited
    Inventors: Atsushi Seki, Wataru Nishida, Kuniaki Hiromatsu
  • Patent number: 7718926
    Abstract: In order to detect a change in the temperature of a substrate (2) and a change of the distribution of oxygen radical concentration near a surface of the substrate (2), a lamp power in each zone of a heater (3) and a pressure in a reactor (1) are measured, the measured lamp power in each zone of the heater (3) and the measured pressure in the reactor (1) are inputted to the prediction equation of process model of a monitoring device (16)to predict the thickness profile of the substrate (2), and it is decided whether an abnormality occurs in thermal processing on the substrate (2) based on the predicted thickness profile.
    Type: Grant
    Filed: July 19, 2006
    Date of Patent: May 18, 2010
    Assignee: Panasonic Corporation
    Inventors: Yutaka Matsuzawa, Wataru Nishida, Hideaki Mito, Yoshinori Takamori
  • Publication number: 20070095799
    Abstract: In order to detect a change in the temperature of a substrate (2) and a change of the distribution of oxygen radical concentration near a surface of the substrate (2), a lamp power in each zone of a heater (3) and a pressure in a reactor (1) are measured, the measured lamp power in each zone of the heater (3) and the measured pressure in the reactor (1) are inputted to the prediction equation of process model of a monitoring device (16)to predict the thickness profile of the substrate (2), and it is decided an abnormality occurs in thermal processing on the substrate (2) based on the predicted thickness profile.
    Type: Application
    Filed: July 19, 2006
    Publication date: May 3, 2007
    Applicant: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yutaka Matsuzawa, Wataru Nishida, Hideaki Mito, Yoshinori Takamori
  • Patent number: 7115186
    Abstract: A liquid material evaporation apparatus including a mixing chamber, a flow control unit, a first flow passage for introducing a liquid material, a second flow passage for introducing a carrier gas connected to the mixing chamber through a first nozzle, the first nozzle inhibiting backflow from the mixing chamber into the second flow passage. A third flow passage for discharging evaporated mixed gas is connected to the mixing chamber through a second nozzle, the mixed liquid material and carrier gas being forced through the second nozzle by the flow control unit, the mixed liquid material and carrier gas depressurizing after passing through the second nozzle to evaporate into a mixed gas in the third flow passage. Heat is applied to the mixing chamber and the second and third flow passages to enhance mixing in the mixing chamber and to avoid condensation in the third flow passage.
    Type: Grant
    Filed: March 11, 2003
    Date of Patent: October 3, 2006
    Assignee: STEC Inc.
    Inventors: Hideaki Miyamoto, Wataru Nishida, Tetsuo Shimizu
  • Publication number: 20030196763
    Abstract: A liquid material evaporation apparatus including a mixing chamber, a flow control unit, a first flow passage for introducing a liquid material, a second flow passage for introducing a carrier gas connected to the mixing chamber through a first nozzle, the first nozzle inhibiting backflow from the mixing chamber into the second flow passage. A third flow passage for discharging evaporated mixed gas is connected to the mixing chamber through a second nozzle, the mixed liquid material and carrier gas being forced through the second nozzle by the flow control unit, the mixed liquid material and carrier gas depressurizing after passing through the second nozzle to evaporate into a mixed gas in the third flow passage. Heat is applied to the mixing chamber and the second and third flow passages to enhance mixing in the mixing chamber and to avoid condensation in the third flow passage.
    Type: Application
    Filed: March 11, 2003
    Publication date: October 23, 2003
    Inventors: Hideaki Miyamoto, Wataru Nishida, Tetsuo Shimizu