Abstract: In an abrasive body used for polishing by a CMP method, provided with a resin structure, a plurality of abrasive grains, and a plurality of longitudinal pores, and made in a form of disc, the longitudinal pore has a length in a thickness direction of the abrasive body longer than a length in a planar direction of the abrasive body, the resin structure includes communicating pores each of which communicating with the longitudinal pore and/or communicating with other communicating pore, the communicating pores include at least one of the abrasive grains in the pores respectively, and the average diameter of the communicating pores is not more than 18 times larger than the average diameter of the abrasive grains.

Abstract: A polishing composition that is for use in CMP polishing and that makes it possible to minimize the occurrence of defects. A polishing composition comprising silica particles, a basic nitrogen-containing organic compound, and water serving as a solvent, wherein the composition exhibits an Rsp value of the following Formula (1) of more than 0.7 and 6 or less as calculated from values measured by pulse NMR: Rsp=(Rav?Rb)/(Rb) . . . (1) (wherein Rsp is an index of water affinity; Rav is the reciprocal of the relaxation time of the polishing composition; and Rb is the reciprocal of the relaxation time of the water serving as a solvent of the polishing composition).

Abstract: In an abrasive body used for polishing by a CMP method, provided with a resin structure, a plurality of abrasive grains, and a plurality of longitudinal pores, and made in a form of disc, the longitudinal pore has a length in a thickness direction of the abrasive body longer than a length in a planar direction of the abrasive body, the resin structure includes communicating pores each of which communicating with the longitudinal pore and/or communicating with other communicating pore, the communicating pores include at least one of the abrasive grains in the pores respectively, and the average diameter of the communicating pores is not more than 18 times larger than the average diameter of the abrasive grains.

Abstract: A polishing processing method using a CMP method for polishing a surface of a crystal material to be smooth by using a loose polishing abrasive grain type polishing pad in the presence of a polishing liquid and a plurality of polishing abrasive grains, in which the crystal material is a single crystal of GaN, and the polishing liquid is an oxidizing polishing liquid having an oxidation-reduction potential between Ehmin (determined by Eq. (1)) mV and Ehmax (determined by Eq. (2)) mV and pH between 0.1 and 6.5: Ehmin (mV)=?33.9 pH+750 . . . (1) Ehmax (mV)=?82.1 pH+1491 . . . (2).

Abstract: A polishing processing method using a CMP method for polishing a surface of a crystal material to be smooth by using a loose polishing abrasive grain type polishing pad in the presence of a polishing liquid and a plurality of polishing abrasive grains, in which the crystal material is a single crystal of GaN, and the polishing liquid is an oxidizing polishing liquid having an oxidation-reduction potential between Ehmin (determined by Eq. (1)) mV and Ehmax (determined by Eq. (2)) mV and pH between 0.1 and 6.5: Ehmin (mV)=?33.9 pH+750 . . . (1) Ehmax (mV)=?82.1 pH+1491 . . . (2).

Abstract: A polishing composition contains polishing particles and a polishing liquid used in polishing processing for smoothing a (0001)Si plane of a SiC single crystal used as an object to be polished, the polishing liquid is an oxidizing polishing liquid, and a relationship between pH of the polishing composition and an off-angle of the (0001)Si plane of the SiC single crystal is located within a range surrounded by four straight lines represented by following equations (1), (2), (3), and (4) in two-dimensional x-y coordinates where the off-angle (°) and the pH of the polishing composition are indicated by x and y, respectively: y=4 (1); y=3 (2); x=0 (3); and x=8 (4).

Abstract: An image processing program, which is executable by a computer and is stored in a recording medium readable by the computer, includes: storing one or more features of a plurality of images, each image having a shape defined by a central angle whose origin is a center of a certain image; setting at least one representative shape defined by a central angle whose origin is a center of a search window for scanning a target image; extracting a first value of the one or more features of the representative shape; extracting a second value of the one or more features of one of the plurality of images; and comparing the extracted first value and the extracted second value and determining an image in the search window as an image candidate for the certain image based on a comparison result.

Abstract: After a camp-on to a telephone B has been registered by a telephone A, when a callback is returned by detecting call termination of the telephone B, the callback can be temporarily released or the camp-on can be released by performing a release operation from a telephone D registered in the same group as the telephone A.