Patents by Inventor Wataru Saiki

Wataru Saiki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9994455
    Abstract: A method of manufacturing trichlorosilane includes a conversion reaction process (first reaction process) for producing a first reaction product gas, which contains trichlorosilane, dichlorosilylene, hydrogen chloride, and high-order silane compounds, by performing a conversion reaction of silicon tetrachloride and hydrogen, which are raw materials, in a first temperature range that is equal to or higher than 1000° C. and equal to or lower than 1900° C.; a first cooling process for cooling the first reaction product gas to a temperature of 950° C. or lower within 1 sec (except that the first reaction product gas is cooled to a temperature lower than 600° C. within 0.01 sec); a second reaction process for maintaining the temperature of the first reaction product gas in a second temperature range, which is equal to or higher than 600° C. and equal to or lower than 950° C., during the time that is equal to or more than 0.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: June 12, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Wataru Saiki, Kazuki Mizushima, Makoto Urushihara
  • Patent number: 9468042
    Abstract: An apparatus for producing trichlorosilane from raw gas containing silicon tetrachloride and hydrogen, having: a reaction chamber being supplied with the raw gas for generating reacted gas containing trichlorosilane and hydrogen; a plurality of heaters heating the raw gas and having exothermic portions being disposed along a vertical direction in the reaction chamber; a plurality of electrodes being connected to basal portions of the heaters; and a radiation plate being disposed between the exothermic portions of the heaters.
    Type: Grant
    Filed: March 7, 2011
    Date of Patent: October 11, 2016
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Masami Miyake, Kazuki Mizushima, Wataru Saiki, Naoya Murakami
  • Patent number: 9315895
    Abstract: An apparatus for producing polycrystalline silicon having: a bell jar having a circumferential wall forming a chamber of a reactor and a jacket covering a circumferential wall, and in which a cooling path formed between the circumferential wall and the jacket that allows cooling medium including water to flow therethrough; a coolant feeding system which is connected to the bell jar so as to feed the cooling medium to the cooling path; a coolant recovering system which is connected to the bell jar so as to recover the cooling medium from the cooling path; a pressure control part controlling a pressure in the cooling path; and a flow-rate control part controlling a flow rate of the cooling medium, wherein the cooling medium flows in the cooling path as boiling two-phase flow by controlling the pressure and flow rate of the cooling medium.
    Type: Grant
    Filed: May 3, 2011
    Date of Patent: April 19, 2016
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Takashi Miyazawa, Wataru Saiki
  • Patent number: 8809746
    Abstract: An apparatus for producing trichlorosilane, comprising: a reaction chamber into which the raw gas is introduced to produce a reaction gas; a plurality of heaters disposed inside the reaction chamber to heat the raw gas; and a plurality of electrodes connected to basal portions of the heaters, wherein the heaters include first heaters each having an exothermic portion and second heaters each having an exothermic portion shorter than that of the first heater and a radiation plate connected to the exothermic portion, wherein a partial portion of the exothermic portion of the first heater faces the radiation plate of the second heaters; the reaction chamber has an introducing port of the raw gas on a side of the exothermic portion of the second heater; and the reaction chamber has discharge port of the reaction product gas on a side of the radiation plate of the second heater is arranged.
    Type: Grant
    Filed: March 3, 2011
    Date of Patent: August 19, 2014
    Assignee: Mitsubishi Materials Corporation
    Inventors: Masami Miyake, Wataru Saiki
  • Patent number: 8663573
    Abstract: An apparatus for producing trichlorosilane, including: a reaction vessel that has a substantially cylindrical wall body, a top plate, and a bottom plate, where a reaction product gas is produced from a raw gas supplied to the reaction vessel through a gas introducing passage provided to the lower section of the cylindrical wall body; and a plurality of heaters that are disposed inside the reaction vessel to heat the raw gas, wherein each of the heaters has a heating element that is elongated in a vertical direction and generates heat by electrification, and a mount that is fixed to the bottom plate and supports the heating element; a flange is provided to intermediate height of the heating element such that the flange is arranged upper than the gas introducing passage and is elongated in horizontal direction; and a passage of the raw gas formed between adjacent heaters is narrowed by the flange.
    Type: Grant
    Filed: February 16, 2011
    Date of Patent: March 4, 2014
    Assignee: Mitsubishi Materials Corporation
    Inventors: Naoya Murakami, Wataru Saiki
  • Patent number: 8491862
    Abstract: An apparatus and a method for producing trichlorosilane are provided, which effectively suppresses the reaction converting trichlorosilane to tetrachlorosilane and the formation of polymers, thereby achieving a high recovery ratio of trichlorosilane. The apparatus for producing trichlorosilane includes: a converter reactor for converting a raw material gas containing tetrachlorosilane and hydrogen into a reaction product gas; a cooler for cooling the reaction product gas fed from the converter reactor; and a plurality of provided in the cooler for spraying cooling liquids. Average droplet diameters of the cooling liquids sprayed from a plurality of the nozzles are different from each other, and a cooling liquids volume sprayed from each of the plurality of nozzles is able to be individually adjusted.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: July 23, 2013
    Assignee: Mitsubishi Materials Corporation
    Inventors: Wataru Saiki, Taner Akbay
  • Patent number: 8372346
    Abstract: In an apparatus for producing trichlorosilane, an internal space of a reaction chamber is partitioned in a radial direction by first walls running along a circumferential direction, and is partitioned into multiple spaces by second walls which extend in a direction crossing the circumferential direction. Upper portions or lower portions of the first walls and the second walls are formed with a communicating portion which circulates a raw material gas to be introduced, toward a central portion of a reaction chamber while the raw material gas goes through the small spaces sequentially and is turned up and down, heaters are installed in the small spaces, one of small spaces on both sides of the second walls is used as a small space for a upward flow passage, and the other is used as a small space for a downward flow passage, and the small spaces communicate with each other via the communication portion of the second walls.
    Type: Grant
    Filed: March 14, 2011
    Date of Patent: February 12, 2013
    Assignee: Mitsubishi Materials Corporation
    Inventors: Kazuki Mizushima, Wataru Saiki, Naoya Murakami, Masami Miyake
  • Patent number: 8168152
    Abstract: The present invention relates to a method for producing trichlorosilane. In this method for producing trichlorosilane, first, silicon tetrachloride and hydrogen are subjected to a conversion reaction at a temperature of equal to or higher than 1000° C. and equal to or lower than 1900° C., to produce a reaction gas containing trichlorosilane, dichlorosilylene, hydrogen chloride and high-order silane compounds, and then the reaction gas discharged from the conversion furnace is cooled to 600° C. or higher within 0.01 seconds from the initiation of cooling and to 500° C. or lower within 2 seconds. Subsequently, the reaction gas is maintained in a temperature range of equal to or higher than 500° C. and equal to or lower than 950° C. for a time period of equal to or longer than 0.01 seconds and equal to or shorter than 5 seconds. The reaction gas is further cooled to below 500° C.
    Type: Grant
    Filed: April 28, 2011
    Date of Patent: May 1, 2012
    Assignee: Mitsubishi Materials Corporation
    Inventors: Wataru Saiki, Kazuki Mizushima
  • Publication number: 20110274851
    Abstract: An apparatus for producing polycrystalline silicon in which raw gas including silicon compounds is introduced into a reactor, in which electric current is supplied to silicon seed rods in the reactor so as to heat the silicon seed rods, and in which polycrystalline silicon is deposited on surfaces of the silicon seed rods and grown to rods, the apparatus has: a bell jar having a circumferential wall forming a chamber of the reactor and a jacket covering the circumferential wall, and in which a cooling path formed between the circumferential wall and the jacket that allows cooling medium including water to flow therethrough; a coolant feeding system which is connected to the bell jar so as to feed the cooling medium to the cooling path; a coolant recovering system which is connected to the bell jar so as to recover the cooling medium from the cooling path; a pressure control part controlling a pressure in the cooling path; and a flow-rate control part controlling a flow rate of the cooling medium, wherein the
    Type: Application
    Filed: May 3, 2011
    Publication date: November 10, 2011
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Takashi Miyazawa, Wataru Saiki
  • Publication number: 20110223074
    Abstract: In an apparatus for producing trichlorosilane, an internal space of a reaction chamber is partitioned in a radial direction by first walls running along a circumferential direction, and is partitioned into multiple spaces by second walls which extend in a direction crossing the circumferential direction. Upper portions or lower portions of the first walls and the second walls are formed with a communicating portion which circulates a raw material gas to be introduced, toward a central portion of a reaction chamber while the raw material gas goes through the small spaces sequentially and is turned up and down, heaters are installed in the small spaces, one of small spaces on both sides of the second walls is used as a small space for a upward flow passage, and the other is used as a small space for a downward flow passage, and the small spaces communicate with each other via the communication portion of the second walls.
    Type: Application
    Filed: March 14, 2011
    Publication date: September 15, 2011
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Kazuki Mizushima, Wataru Saiki, Naoya Murakami, Masami Miyake
  • Publication number: 20110215084
    Abstract: An apparatus for producing trichlorosilane from raw gas containing silicon tetrachloride and hydrogen, having: a reaction chamber being supplied with the raw gas for generating reacted gas containing trichlorosilane and hydrogen; a plurality of heaters heating the raw gas and having exothermic portions being disposed along a vertical direction in the reaction chamber; a plurality of electrodes being connected to basal portions of the heaters; and a radiation plate being disposed between the exothermic portions of the heaters.
    Type: Application
    Filed: March 7, 2011
    Publication date: September 8, 2011
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Masami Miyake, Kazuki Mizushima, Wataru Saiki, Naoya Murakami
  • Publication number: 20110215083
    Abstract: An apparatus for producing trichlorosilane, comprising: a reaction chamber into which the raw gas is introduced to produce a reaction gas; a plurality of heaters disposed inside the reaction chamber to heat the raw gas; and a plurality of electrodes connected to basal portions of the heaters, wherein the heaters include first heaters each having an exothermic portion and second heaters each having an exothermic portion shorter than that of the first heater and a radiation plate connected to the exothermic portion, wherein a partial portion of the exothermic portion of the first heater faces the radiation plate of the second heaters; the reaction chamber has an introducing port of the raw gas on a side of the exothermic portion of the second heater; and the reaction chamber has discharge port of the reaction product gas on a side of the radiation plate of the second heater is arranged.
    Type: Application
    Filed: March 3, 2011
    Publication date: September 8, 2011
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Masami Miyake, Wataru Saiki
  • Publication number: 20110200510
    Abstract: An apparatus for producing trichlorosilane, including: a reaction vessel that has a substantially cylindrical wall body, a top plate, and a bottom plate, where a reaction product gas is produced from a raw gas supplied to the reaction vessel through a gas introducing passage provided to the lower section of the cylindrical wall body; and a plurality of heaters that are disposed inside the reaction vessel to heat the raw gas, wherein each of the heaters has a heating element that is elongated in a vertical direction and generates heat by electrification, and a mount that is fixed to the bottom plate and supports the heating element; a flange is provided to intermediate height of the heating element such that the flange is arranged upper than the gas introducing passage and is elongated in horizontal direction; and a passage of the raw gas formed between adjacent heaters is narrowed by the flange.
    Type: Application
    Filed: February 16, 2011
    Publication date: August 18, 2011
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Naoya Murakami, Wataru Saiki
  • Publication number: 20110200512
    Abstract: The present invention relates to a method for producing trichlorosilane. In this method for producing trichlorosilane, first, silicon tetrachloride and hydrogen are subjected to a conversion reaction at a temperature of equal to or higher than 1000° C. and equal to or lower than 1900° C., to produce a reaction gas containing trichlorosilane, dichlorosilylene, hydrogen chloride and high-order silane compounds, and then the reaction gas discharged from the conversion furnace is cooled to 600° C. or higher within 0.01 seconds from the initiation of cooling and to 500° C. or lower within 2 seconds. Subsequently, the reaction gas is maintained in a temperature range of equal to or higher than 500° C. and equal to or lower than 950° C. for a time period of equal to or longer than 0.01 seconds and equal to or shorter than 5 seconds. The reaction gas is further cooled to below 500° C.
    Type: Application
    Filed: April 28, 2011
    Publication date: August 18, 2011
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Wataru Saiki, Kazuki Mizushima
  • Publication number: 20100233062
    Abstract: An apparatus and a method for producing trichlorosilane are provided, which effectively suppresses the reaction converting trichlorosilane to tetrachlorosilane and the formation of polymers, thereby achieving a high recovery ratio of trichlorosilane. The apparatus for producing trichlorosilane includes: a converter reactor for converting a raw material gas containing tetrachlorosilane and hydrogen into a reaction product gas; a cooler for cooling the reaction product gas fed from the converter reactor; and a plurality of provided in the cooler for spraying cooling liquids. Average droplet diameters of the cooling liquids sprayed from a plurality of the nozzles are different from each other, and a cooling liquids volume sprayed from each of the plurality of nozzles is able to be individually adjusted.
    Type: Application
    Filed: March 10, 2010
    Publication date: September 16, 2010
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Wataru Saiki, Taner Akbay
  • Publication number: 20040232046
    Abstract: An apparatus as a suitable embodiment, wherein a reactor (102) has a nozzle (means for supplying a raw material, an oxidizing agent and water) (103), a high temperature and high pressure gas formed by reacting the raw material with oxygen or the like in an oxidizing agent under a water-containing atmosphere is introduced to a heat exchanger (104) which is provided between a pressure vessel (101) and the reactor (102), the pressure vessel (101) has a water inlet (114) connected with a water supply line (106) and an opening (117) for a discharge line (105) for a formed gas which is connected with the heat exchanger (104), and the nozzle (103) has a flow route for supplying water present between the pressure vessel (101) and the reactor (102) to the inside of the reactor(102); and a method for pyrolysis and gasification using the apparatus.
    Type: Application
    Filed: February 19, 2004
    Publication date: November 25, 2004
    Inventors: Hiroshi Tanaka, Kazuaki Ota, Wenbin Dai, Wataru Saiki, Gang Bai, Ryouhei Mori