Abstract: A solar cell module includes a first isolation groove for separating the first electrode layer; a second isolation groove for separating each of the first semiconductor layer, the transparent conductive layer, and the second semiconductor layer; and a third isolation groove formed in a position opposite from the first isolation groove across the second isolation groove and for separating each of the second electrode layer, the second semiconductor layer, the transparent conductive layer, and the first semiconductor layer. The second electrode layer includes: a first conductive layer formed on the first semiconductor layer constituting a bottom surface of the second isolation groove, on an inner wall of the second isolation groove, and on the second semiconductor layer; and a second conductive layer formed on the first conductive layer.

Abstract: A photovoltaic device is provided comprising an a-Si unit in which a plurality of a-Si cells are connected in series over a transparent insulating substrate, and a ?c-Si unit in which a plurality of ?c-Si cells having an optical band gap which differs from that of the a-Si cell are connected in series over a substrate, wherein a light-transmissive inorganic insulating layer is formed over at least one of the a-Si unit and the ?c-Si unit, and the a-Si unit and the ?c-Si unit are fixed by a light-transmissive resin layer while the a-Si unit and the ?c-Si unit are opposed to each other in opposite integration directions with the transparent insulating substrate and the substrate being at outer sides.

Abstract: In a solar cell module, a photovoltaic layer and a bonding layer 15 are arranged in sequence on a transparent substrate 10. The photovoltaic layer is formed by multiple photovoltaic elements connected in series. Each photovoltaic element is formed by stacking in sequence a transparent conductive film 11, photoelectric conversion layers 12 and 13, and a back surface electrode 14. Furthermore, the solar cell module is provided with a first groove 22 configured to separate the photoelectric conversion layers 12 and 13 and the back surface electrode 14 on the transparent conductive film 11 at an end portion of the photovoltaic layer parallel to a series connection direction of the photovoltaic layer 1.

Abstract: A plurality of first separation grooves are formed in a back electrode. Second separation grooves having a width smaller than that of the first separation grooves are formed by removing a second photovoltaic conversion layer and an intermediate reflective layer inside the first separation grooves. Third separation grooves having a width smaller than that of the second separation grooves are formed by removing a first photovoltaic conversion layer and a light reflective electrode inside the second separation grooves. Corners of the first photovoltaic conversion layer and corners of the second photovoltaic conversion layer that are exposed in the separation grooves are removed by performing plasma etching, so that the upper surfaces of side ends of the intermediate reflective layer are exposed.

Abstract: A photovoltaic apparatus includes a second groove so formed as to cut at least an intermediate layer, an insulating member so formed as to cover at least a cut portion of the intermediate layer in the second groove and extend along an upper surface of a second photoelectric conversion layer, and a third groove so formed as to pass through a first photoelectric conversion layer, the intermediate layer, the second photoelectric conversion layer and the insulating member on a region opposite to a first groove with respect to the second groove, wherein the insulating member is so formed as to extend up to at least a region opposite to the first groove with respect to the third groove.

Abstract: This photovoltaic apparatus comprises a second groove for electrically isolating first and second back electrodes from each other, a third groove formed on a region located between a first groove and the second groove to cut at least an intermediate layer from the upper surface of the second back electrode, a first insulating member embedded in the third groove to cover at least a cut portion of the intermediate layer and a conductive member electrically connected to the first substrate electrode on a region located between the second and third grooves and electrically connected to the second back electrode across the third groove.

Abstract: The present invention provides a method for manufacturing integrated-type photovoltaic devices wherein light is incident from a side opposite to its substrate. The advantage of the method is easy patterning. A first electrode film, a photoelectric conversion layer, and a second electrode film are laminated on an insulating layer of a substrate without separation to form a laminated film. A deep open groove is formed through the laminated film to the depth of the first electrode film so as to electrically separate the laminated film including the first electrode film. Two shallow open grooves are formed parallel with, but slightly away from the deep open groove, and separate the laminated film upto the second electrode film. The second electrode film having three or more open grooves are used as a mask to remove the photoelectric conversion layer by etching to expose the first electrode film at bottoms of at least one shallow open groove.

Abstract: A plurality of first separation grooves are formed in a back electrode. Second separation grooves having a width smaller than that of the first separation grooves are formed by removing a second photovoltaic conversion layer and an intermediate reflective layer inside the first separation grooves. Third separation grooves having a width smaller than that of the second separation grooves are formed by removing a first photovoltaic conversion layer and a light reflective electrode inside the second separation grooves. Corners of the first photovoltaic conversion layer and corners of the second photovoltaic conversion layer that are exposed in the separation grooves are removed by performing plasma etching, so that the upper surfaces of side ends of the intermediate reflective layer are exposed.

Abstract: The present invention provides a method for manufacturing integrated-type photovoltaic devices wherein light is incident from a side opposite to its substrate. The advantage of the method is easy patterning. A first electrode film, a photoelectric conversion layer, and a second electrode film are laminated on an insulating layer of a substrate without separation to form a laminated film. A deep open groove is formed through the laminated film to the depth of the first electrode film so as to electrically separate the laminated film including the first electrode film. Two shallow open grooves are formed parallel with, but slightly away from the deep open groove, and separate the laminated film upto the second electrode film. The second electrode film having three or more open grooves are used as a mask to remove the photoelectric conversion layer by etching to expose the first electrode film at bottoms of at least one shallow open groove.

Abstract: A method of manufacturing a sealed battery that is able to keep productivity as high as possible while suppressing cracking incident to welding using an energy beam, such as a laser beam. A material such as an aluminum alloy is used for the external casing and the cover plate. The cover plate bas a rib, which is formed on the outer edge of the cover plate, and a flat part. The external casing rim and the outer edge of the cover plate are welded together, the thickness of the external casing at the rim is made small. A closure cap is fit into the external casing. The closure cap and external casing are welded together and the molten part is gradually cooled.

Abstract: This invention provides a patterning method for a transparent electrode capable of preventing heat damages and insulation failure or the like even when a ZnO film is used. An ITO film 3 is formed on a transparent substrate 1 by sputtering and the ZnO film 4 is formed on the ITO film 3 by sputtering. Then, regions to be irradiated of the ITO film 3 and the ZnO film 4 are eliminated and patterned by Nd-YAG laser irradiation.

Abstract: The object of the present invention is to provide a sealed battery and a manufacturing method of a sealed battery that suppresses cracking incident to welding using an energy beam, such as a laser beam, when a material such as an aluminum alloy is used for the external casing and the cover plate, with keeping the productivity as high as possible. In order to realize the object, a rib is formed on the cover plate, and the thickness of the external casing at the rim is made small, and the rib and the rim of the external casing are welded together in manufacturing the sealed battery. Then, the closure cap and the external casing are welded together using a laser the energy distribution of which has a flat part in manufacturing the sealed battery to realize the object. In addition, the closure cap and the external casing are welded together while the molten part is gradually cooled in manufacturing the sealed battery to realize the object.

Abstract: The object of the present invention is to provide a sealed battery and a manufacturing method of a sealed battery that suppresses cracking incident to welding using an energy beam, such as a laser beam, when a material such as an aluminum alloy is used for the external casing and the cover plate, with keeping the productivity as high as possible. In order to realize the object, a rib is formed on the cover plate, and the thickness of the external casing at the rim is made small, and the rib and the rim of the external casing are welded together in manufacturing the sealed battery. Then, the closure cap and the external casing are welded together using a laser the energy distribution of which has a flat part in manufacturing the sealed battery to realize the object. In addition, the closure cap and the external casing are welded together while the molten part is gradually cooled in manufacturing the sealed battery to realize the object.

Abstract: A photovoltaic device having a structure in which a transparent conductive film, a p-type amorphous silicon layer, an i-type amorphous silicon layer, an n-type microcrystalline silicon layer and a back electrode film are laminated on a transparent substrate so as to satisfy the conditions of 50 Å<dc1<da1×&agr;1  (1) and 0.124<&agr;1<0.130  (2), where da1 is the total thickness (Å) of the p-type amorphous silicon layer and i-type amorphous silicon layer, and dc1 is the thickness (Å) of the n-type microcrystalline silicon layer.

Abstract: A plurality of groups of integrated elements (30, 40) comprising a plurality of photovoltaic elements (2) electrically connected in series are provided on a substrate (1) having an insulating surface. The plurality groups of integrated elements (30, 40) are arranged in parallel by interposing a separating part (50). A rear surface member (4) is electrically connected with the plurality of the groups of integrated elements (30, 40) in series and is adhered to a rear surface side of the plurality of groups of integrated elements (30, 40) by interposing an adhesive layer (5) containing resin. The adhesive layer (5) is provided so as to cover a rear surface of the groups of integrated elements (30, 40) except for an area corresponding to the separating part (50).

Abstract: This invention manufactures a photovoltaic device by the following process steps: a step to form a first electrode layer and a light-active semiconductor layer on an insulating surface of the substrate; a step to form a transparent conducting film over most of the insulating surface including the light-active semiconductor layer; a step to establish a patterned transparent protective layer on the transparent conducting film over power generating regions; and a step to irradiate ultraviolet laser light over most of the substrate to remove exposed portions of the transparent conducting film not masked by the pattered transparent protective layer and form a transparent conducting layer corresponding to the pattered transparent protective layer. The patterned transparent protective layer serves a dual purpose as masking material for removing the specified areas of the transparent conducting film by ultraviolet laser and as a transparent protective layer.

Abstract: This invention provides a patterning method for a transparent electrode capable of preventing heat damages and insulation failure or the like even when a ZnO film is used. An ITO film 3 is formed on a transparent substrate 1 by sputtering and the ZnO film 4 is formed on the ITO film 3 by sputtering. Then, regions to be irradiated of the ITO film 3 and the ZnO film 4 are eliminated and patterned by Nd-YAG laser irradiation.

Abstract: The present invention is to prevent a back metal electrode film from being insufficiently processed even if an amorphous silicon related material film is thinned, wherein a transparent conductive film 2, an amorphous silicon related material film 3, and a back metal electrode film 4 are formed in this order on one main surface of a light transmissive insulation substrate 1, a brittle film 5 having higher hardness than that of the back metal electrode film 4 in at least a fused state is provided on the back metal electrode film 4, and an energy beam is irradiated from the other main surface of the light transmissive insulation substrate 1, to remove the amorphous silicon related material film 3, the back metal electrode film 4, and the brittle film 5.

Abstract: In processing an object to be processed by a laser beam, the laser beam is expanded by a beam expander and is introduced into a mask in which a light transmitted portion having a desired pattern is formed, the laser beam introduced into the mask is passed through the light transmitted portion having a desired pattern, to obtain a laser beam corresponding to the pattern of the light transmitted portion as well as having an approximately uniform energy distribution, the laser beam is formed and projected on the object to be processed by an image forming lens, and processing corresponding to the pattern of the light transmitted portion is performed on the object to be processed by the laser beam formed and projected. By this photoprocessing, a part of photoelectric converting elements in a photovoltaic device are removed to perform groove processing, or an amorphous semiconductor film is crystallized.

Abstract: A method of removing a prescribed portion of a semiconductor film or a metal film involves irradiating the prescribed portion to be removed with a first energy beam, and then with a second energy beam. The energy densities and beam widths of the first and second energy beams are each separately controlled or selected to avoid damaging an underlayer under the film and to reduce or avoid deformation of a periphery around the removed portion.