Abstract: A heating portion heats a silicon melt in a quartz crucible. The heating portion includes: a heat generation portion integrally molded into a cylinder; and four power supply portions for supplying electric power to the heat generation portion. When the heating portion is divided by a virtual plane into two including a first heating region located on one side of the heat generation portion and a second heating region located on the other side of the heat generation portion with respect to the virtual plane, the virtual plane passing through a center axis of the heat generation portion and being perpendicular to the heat generation portion and parallel to a central magnetic field line of a horizontal magnetic field applied to the silicon melt, a heat generation amount of the first heating region and a heat generation amount of the second heating region are set to different values.

Abstract: A convection pattern estimation method of a silicon melt includes: applying a horizontal magnetic field of 0.2 tesla or more to a silicon melt in a rotating quartz crucible with use of a pair of magnetic bodies disposed across the quartz crucible; before a seed crystal is dipped into the silicon melt to which the horizontal magnetic field is applied; measuring temperatures at a first and second measurement points positioned on a first imaginary line that passes through a center of a surface of the silicon melt and is not in parallel with a central magnetic field line of the horizontal magnetic field as viewed vertically from above; and estimating a direction of a convection flow in a plane in the silicon melt orthogonal to the direction in which the horizontal magnetic field is applied on a basis of the measured temperatures of the first and second measurement points.

Abstract: A convection pattern control method includes: heating a silicon melt in a quartz crucible using a heating portion; and applying a horizontal magnetic field to the silicon melt in the quartz crucible being rotated. In the heating of the silicon, the silicon melt is heated with the heating portion whose heating capacity differs on both sides across an imaginary line passing through a center axis of the quartz crucible and being in parallel to a central magnetic field line of the horizontal magnetic field when the quartz crucible is viewed from vertically above. In the applying of the horizontal magnetic field, the horizontal magnetic field of 0.2 tesla or more is applied to fix a direction of a convection flow in a single direction in a plane orthogonal to an application direction of the horizontal magnetic field in the silicon melt.

Abstract: A method of manufacturing monocrystalline silicon by flowing inert gas in a chamber, applying horizontal magnetic field to a silicon melt in a quartz crucible, and pulling up monocrystalline silicon includes: forming a flow distribution of a flow of the inert gas flowing between a lower end of a heat shield and a surface of the silicon melt in the quartz crucible to be plane asymmetric with respect to a plane defined by a crystal pull-up axis of the pull-up device and an application direction of the horizontal magnetic field and rotationally asymmetric with respect to the crystal pull-up axis: maintaining the formed plane asymmetric and rotationally asymmetric flow distribution in a magnetic-field-free state until a silicon material in the quartz crucible is completely melted; and applying the horizontal magnetic field to the completely melted silicon material and starting pulling up the monocrystalline silicon.

Abstract: A method of controlling a convection pattern of a silicon melt includes applying a horizontal magnetic field having an intensity of 0.2 tesla or more to the silicon melt in a rotating quartz crucible to fix a direction of a convection flow in a plane orthogonal to an application direction of the horizontal magnetic field in the silicon melt, the horizontal magnetic field being applied so that a central magnetic field line passes through a point horizontally offset from a center axis of the quartz crucible by 10 mm or more.

Abstract: A method of controlling a convection pattern of a silicon melt includes: acquiring a temperature at a first measurement point not overlapping a rotation center of a quartz crucible on a surface of the silicon melt, the quartz crucible rotating in a magnetic-field-free state; determining that the temperature at the first measurement point periodically changes; and fixing a direction of a convection flow to a single direction in a plane orthogonal with an application direction of a horizontal magnetic field in the silicon melt by starting a drive of a magnetic-field applying portion to apply the horizontal magnetic field to the silicon melt when a temperature change at the first measurement point reaches a predetermined state, and subsequently raising the intensity to 0.2 tesla or more.

Abstract: Provided is a method of producing a high resistance n-type silicon single crystal ingot with small tolerance margin on resistivity in the crystal growth direction, which is suitably used in a power device. In the method of producing a silicon single crystal ingot using Sb or As as an n-type dopant, while a silicon single crystal ingot is pulled up, the amount of the n-type dopant being evaporated from a silicon melt per unit solidification ratio is kept within a target evaporation amount range per unit solidification ratio by controlling one or more pulling condition values including at least one of the pressure in a chamber, the flow volume of Ar gas, and a gap between a guide portion and the silicon melt.

Abstract: A method of controlling a convection pattern of a silicon melt includes: acquiring a temperature at a first measurement point not overlapping a rotation center of a quartz crucible on a surface of the silicon melt, the quartz crucible rotating in a magnetic-field-free state; determining that the temperature at the first measurement point periodically changes; and fixing a direction of a convection flow to a single direction in a plane orthogonal with an application direction of a horizontal magnetic field in the silicon melt by starting a drive of a magnetic-field applying portion to apply the horizontal magnetic field to the silicon melt when a temperature change at the first measurement point reaches a predetermined state, and subsequently raising the intensity to 0.2 tesla or more.

Abstract: A method of manufacturing monocrystalline silicon by flowing inert gas in a chamber, applying horizontal magnetic field to a silicon melt in a quartz crucible, and pulling up monocrystalline silicon includes: forming a flow distribution of a flow of the inert gas flowing between a lower end of a heat shield and a surface of the silicon melt in the quartz crucible to be plane asymmetric with respect to a plane defined by a crystal pull-up axis of the pull-up device and an application direction of the horizontal magnetic field and rotationally asymmetric with respect to the crystal pull-up axis: maintaining the formed plane asymmetric and rotationally asymmetric flow distribution in a magnetic-field-free state until a silicon material in the quartz crucible is completely melted; and applying the horizontal magnetic field to the completely melted silicon material and starting pulling up the monocrystalline silicon.

Abstract: A method of controlling a convection pattern of a silicon melt includes applying a horizontal magnetic field having an intensity of 0.2 tesla or more to the silicon melt in a rotating quartz crucible to fix a direction of a convection flow in a plane orthogonal to an application direction of the horizontal magnetic field in the silicon melt, the horizontal magnetic field being applied so that a central magnetic field line passes through a point horizontally offset from a center axis of the quartz crucible by 10 mm or more.

Abstract: A convection pattern estimation method of a silicon melt includes: applying a horizontal magnetic field of 0.2 tesla or more to a silicon melt in a rotating quartz crucible with use of a pair of magnetic bodies disposed across the quartz crucible; before a seed crystal is dipped into the silicon melt to which the horizontal magnetic field is applied; measuring temperatures at a first and second measurement points positioned on a first imaginary line that passes through a center of a surface of the silicon melt and is not in parallel with a central magnetic field line of the horizontal magnetic field as viewed vertically from above; and estimating a direction of a convection flow in a plane in the silicon melt orthogonal to the direction in which the horizontal magnetic field is applied on a basis of the measured temperatures of the first and second measurement points.

Abstract: A convection pattern control method includes: heating a silicon melt in a quartz crucible using a heating portion; and applying a horizontal magnetic field to the silicon melt in the quartz crucible being rotated. In the heating of the silicon, the silicon melt is heated with the heating portion whose heating capacity differs on both sides across an imaginary line passing through a center axis of the quartz crucible and being in parallel to a central magnetic field line of the horizontal magnetic field when the quartz crucible is viewed from vertically above. In the applying of the horizontal magnetic field, the horizontal magnetic field of 0.2 tesla or more is applied to fix a direction of a convection flow in a single direction in a plane orthogonal to an application direction of the horizontal magnetic field in the silicon melt.

Abstract: A silicon single crystal manufacturing method by a Czochralski method pulls up a silicon single crystal from a silicon melt in a quartz crucible while applying a magnetic field to the silicon melt. During a pull-up process of the silicon single crystal, the surface temperature of the silicon melt is continuously measured, and crystal growth conditions are changed based on a result of frequency analysis of the surface temperature.

Abstract: A silicon single crystal manufacturing method by a Czochralski method pulls up a silicon single crystal from a silicon melt in a quartz crucible while applying a magnetic field to the silicon melt. During a pull-up process of the silicon single crystal, the surface temperature of the silicon melt is continuously measured, and crystal growth conditions are changed based on a result of frequency analysis of the surface temperature.

Abstract: Provided are a method of producing a high resistance n-type silicon single crystal ingot with small tolerance margin on specific resistance in the crystal growth direction, which is suitably used in a power device, and a silicon single crystal growth apparatus. In a method of producing a silicon single crystal ingot using Sb or As as an n-type dopant with the use of a silicon single crystal growth apparatus using the Czochralski process, a measurement step of measuring the gas concentration of a compound gas containing the n-type dopant as a constituent element; and a pulling condition controlling step of controlling one or more pulling condition values including at least one of a pressure in the chamber, a flow volume of the Ar gas, and a gap between the guide portion and the silicon melt so that the measured gas concentration falls within a target gas concentration range are performed.

Abstract: Provided is a method of producing a high resistance n-type silicon single crystal ingot with small tolerance margin on resistivity in the crystal growth direction, which is suitably used in a power device. In the method of producing a silicon single crystal ingot using Sb or As as an n-type dopant, while a silicon single crystal ingot is pulled up, the amount of the n-type dopant being evaporated from a silicon melt per unit solidification ratio is kept within a target evaporation amount range per unit solidification ratio by controlling one or more pulling condition values including at least one of the pressure in a chamber, the flow volume of Ar gas, and a gap between a guide portion and the silicon melt.

Abstract: An apparatus for manufacturing a silicon single crystal is provided. The apparatus comprises a chamber (11), a quarts crucible (21) provided in the chamber so as to be rotatable and movable upward and downward and store a silicon melt, a first heater (25) for melting a silicon raw material stored in the crucible, and a pulling mechanism (32) provided in the chamber so as to be rotatable and movable upward and downward. The pulling mechanism has a lower end to which a seed crystal (S) is attached. The seed crystal is to be dipped in the silicon melt in the crucible and pulled upward for growing a silicon single crystal by a Czochralski method. The apparatus further comprises a melt supplying mechanism (50) for supplying an additional silicon melt to the silicon melt in the crucible from external of the chamber.

Abstract: An apparatus for manufacturing a silicon single crystal is provided. The apparatus comprises a chamber (11), a quarts crucible (21) provided in the chamber so as to be rotatable and movable upward and downward and store a silicon melt, a first heater (25) for melting a silicon raw material stored in the crucible, and a pulling mechanism (32) provided in the chamber so as to be rotatable and movable upward and downward. The pulling mechanism has a lower end to which a seed crystal (S) is attached. The seed crystal is to be dipped in the silicon melt in the crucible and pulled upward for growing a silicon single crystal by a Czochralski method. The apparatus further comprises a melt supplying mechanism (50) for supplying an additional silicon melt to the silicon melt in the crucible from external of the chamber.

Abstract: A method for manufacturing a silicon wafer includes a step of annealing a silicon wafer which is sliced from a silicon single crystal ingot, thereby forming a DZ layer in a first surface and in a second surface of the silicon wafer and a step of removing either a portion of the DZ layer in the first surface or a portion of the DZ layer in the second surface.

Abstract: In this silicon single crystal wafer for IGBT, COP defects and dislocation clusters are eliminated from the entire region in the radial direction of the crystal, the interstitial oxygen concentration is 8.5×1017 atoms/cm3 or less, and variation in resistivity within the wafer surface is 5% or less. This method for manufacturing a silicon single crystal wafer for IGBT includes introducing a hydrogen atom-containing substance into an atmospheric gas at a hydrogen gas equivalent partial pressure of 40 to 400 Pa, and growing a single crystal having an interstitial oxygen concentration of 8.5×1017 atoms/cm3 or less at a silicon single crystal pulling speed enabling pulling of a silicon single crystal free of grown-in defects. The pulled silicon single crystal is irradiated with neutrons so as to dope with phosphorous; or an n-type dopant is added to the silicon melt; or phosphorous is added to the silicon melt so that the phosphorous concentration in the silicon single crystal is 2.9×1013 to 2.