Abstract: A capacitive sensor includes: a substrate that is in the form of a sheet; and a sensor electrode that is capacitive and disposed on a frontside of the substrate. The sensor electrode is a conductive fabric made by applying a metal plating on a mesh fabric that is woven of a plurality of warps and a plurality of wefts and that has openings each formed by two adjacent warps among the plurality of warps and two adjacent wefts among the plurality of wefts. An area defined by a maximum outside diameter of a warp or weft is smaller than an area of an opening space of each of the openings.

Abstract: A capacitive sensor includes: a substrate that is in the form of a sheet; and a sensor electrode that is capacitive and disposed on a frontside of the substrate. The sensor electrode is a conductive fabric made by applying a metal plating on a mesh fabric that is woven of a plurality of warps and a plurality of wefts and that has openings each formed by two adjacent warps among the plurality of warps and two adjacent wefts among the plurality of wefts. An area defined by a maximum outside diameter of a warp or weft is smaller than an area of an opening space of each of the openings.

Abstract: A method of producing a multilayer ceramic electronic device, having a firing step for firing a pre-firing element body wherein a plurality of dielectric layers and internal electrode layers containing a base metal are alternately arranged, characterized in that the firing step has a temperature raising step for raising a temperature to a firing temperature, and hydrogen is continued to be introduced from a point in time of the temperature raising step. According to the method, it is possible to provide a method of producing a multilayer ceramic electronic device, such as a multilayer ceramic capacitor, wherein shape anisotropy and other structural defaults are hard to occur and electric characteristics are improved while suppressing deterioration thereof even if dielectric layers becomes thinner and stacked more.

Abstract: A method of producing a multilayer ceramic electronic device, having a firing step for firing a pre-firing element body wherein a plurality of dielectric layers and internal electrode layers containing a base metal are alternately arranged, characterized in that the firing step has a temperature raising step for raising a temperature to a firing temperature, and hydrogen is continued to be introduced from a point in time of the temperature raising step. According to the method, it is possible to provide a method of producing a multilayer ceramic electronic device, such as a multilayer ceramic capacitor, wherein shape anisotropy and other structural defaults are hard to occur and electric characteristics are improved while suppressing deterioration thereof even if dielectric layers becomes thinner and stacked more.

Abstract: A method of producing a multilayer ceramic electronic device, having a firing step for firing a pre-firing element body wherein a plurality of dielectric layers and internal electrode layers containing a base metal are alternately arranged, characterized in that the firing step has a temperature raising step for raising a temperature to a firing temperature, and hydrogen is continued to be introduced from a point in time of the temperature raising step. According to the method, it is possible to provide a method of producing a multilayer ceramic electronic device, such as a multilayer ceramic capacitor, wherein shape anisotropy and other structural defaults are hard to occur and electric characteristics are improved while suppressing deterioration thereof even if dielectric layers becomes thinner and stacked more.

Abstract: A dielectric ceramic composition includes a main component including a dielectric oxide expressed by a composition formula of {(Ca1-xSrx)O}m.(Zr1-yTiy)O2, wherein m, x and y indicating composition mole ratios in the composition formula are in relationships of 0.8?m?1.3, 0x?1.00 and 0.1?y?0.8; a first subcomponent including a V oxide; and a second subcomponent including an Al oxide; wherein ratios of respective components with respect to 100 moles of said main component are the first subcomponent: 0 mole<first subcomponent<7 moles (wherein the value is a V oxide value in terms of V2O5); and the second subcomponent: 0 mole<second subcomponent<15 moles (wherein the value is an Al oxide value in terms of Al2O3).

Abstract: A method of production of a reduction resistant dielectric ceramic composition having a superior low frequency dielectric characteristic and further improved in accelerated lifetime of insulation resistance, specifically a method of production of a dielectric ceramic composition containing a main component including a dielectric oxide of a specific composition, a first subcomponent including a V oxide, a second subcomponent containing an Al oxide, a third subcomponent containing an Mn oxide, and a fourth subcomponent containing a specific sintering aid in a specific ratio, including a step of mixing at least part of the materials of the subcomponents excluding one or both of at least the material of the third subcomponent and material of the fourth subcomponent with the starting materials prepared for obtaining the material of the main component to prepare the pre-reaction material, a step of causing the prepared pre-reaction material to react to obtain a reacted material, and a step of mixing the materials o

Abstract: A dielectric ceramic composition comprising a main component including a dielectric oxide expressed by a composition formula of {(Ca1-x Mex)O}m·(Zr1-y Tiy)O2, wherein “Me” indicating an element name in the composition formula is at least one of Sr, Mg and Ba, and “m”, “x” and “y” indicating composition mole ratios in the composition formula are in relationships of 0.8?m?1.3, 0?x?1.00 and 0?y?1.00; a first subcomponent including a V oxide; a second subcomponent including an Al oxide; a third subcomponent including a Mn oxide; and a fourth subcomponent including a composite oxide expressed by a composition formula of {(Baz, Ca1-z)O}v SiO2, wherein “z” and “v” indicating composition mole ratios in the composition formula are in relationships of 0?z?1 and 0.5?v?4.

Abstract: A method of production of a multilayer ceramic capacitor or other multilayer ceramic electronic device with few structural defects and improved highly accelerated life, that is, a method of production of a multilayer ceramic electronic device having a firing step of firing a stack comprised of a dielectric layer paste and an internal electrode layer paste including a base metal alternately arranged in a plurality of layers, a first annealing step of annealing, at a temperature T1 of 600 to 900° C., the stack after firing and a second annealing step of annealing, at a temperature T2 of 900 to 1200° C. (however, excluding 900° C.), the stack after said first annealing.

Abstract: A method of production of a reduction resistant dielectric ceramic composition having a superior low frequency dielectric characteristic and further improved in accelerated lifetime of insulation resistance, specifically a method of production of a dielectric ceramic composition containing a main component including a dielectric oxide of a specific composition, a first subcomponent including a V oxide, a second subcomponent containing an Al oxide, a third subcomponent containing an Mn oxide, and a fourth subcomponent containing a specific sintering aid in a specific ratio, including a step of mixing at least part of the materials of the subcomponents excluding one or both of at least the material of the third subcomponent and material of the fourth subcomponent with the starting materials prepared for obtaining the material of the main component to prepare the pre-reaction material, a step of causing the prepared pre-reaction material to react to obtain a reacted material, and a step of mixing the materials o

Abstract: A method of production of a multilayer ceramic capacitor or other multilayer ceramic electronic device with few structural defects and improved highly accelerated life, that is, a method of production of a multilayer ceramic electronic device having a firing step of firing a stack comprised of a dielectric layer paste and an internal electrode layer paste including a base metal alternately arranged in a plurality of layers, a first annealing step of annealing, at a temperature T1 of 600 to 900° C., the stack after firing and a second annealing step of annealing, at a temperature T2 of 900 to 1200° C. (however, excluding 900° C.), the stack after said first annealing.

Abstract: The present invention is directed to a manufacturing method for laminated electronic components which provides small cutting width and high degree of size precision and prevents defect occurrence after the baking process resulting from stress strain. In the manufacturing method, a laser beam 92 is applied onto a laminated green sheet 21 to cut it into laminated green chips 31 having a rectangular solid with a side of 0.6 mm or less and a side of 0.3 mm or less in dimensions measured after the baking process.

Abstract: A method of producing a multilayer ceramic electronic device, having a firing step for firing a pre-firing element body wherein a plurality of dielectric layers and internal electrode layers containing a base metal are alternately arranged, characterized in that the firing step has a temperature raising step for raising a temperature to a firing temperature, and hydrogen is continued to be introduced from a point in time of the temperature raising step. According to the method, it is possible to provide a method of producing a multilayer ceramic electronic device, such as a multilayer ceramic capacitor, wherein shape anisotropy and other structural defaults are hard to occur and electric characteristics are improved while suppressing deterioration thereof even if dielectric layers becomes thinner and stacked more.

Abstract: A multi-layer electronic part, such as a multi-layer ceramic capacitor, which comprises internal electrodes stacked alternately with layers of a dielectric material containing at least 50 wt % of lead in terms of PbO and external electrodes connected to the internal electrodes, the external electrodes each comprising a baked electrode layer connected to the internal electrodes; a plating layer having solderability; and a metal particle-containing electrode layer comprising a thermosetting resin and metal particles, between the baked electrode layer and the plating layer, the metal particle-containing electrode layer having a thickness of from 5 to 200 .mu.m, the metal particle-containing electrode layer being disposed between the baked electrode layer and the plating layer.

Abstract: To provide a non-reducing dielectric ceramic composition for multilayer ceramic capacitor, in which decrease of specific resistance and shortening of life time do not occur due to reduction of dielectric ceramic composition even when it is fired in neutral or reducing atmosphere and capacitance does not vary extensively due to temperature change, the non-reducing dielectric ceramic composition according to the present invention comprises 86.32 to 97.64 mols of BaTiO.sub.3, 0.01 to 10.00 mols of Y.sub.2 O.sub.3, 0.01 to 10.00 mols of MgO, and 0.001 to 0.200 mol of V.sub.2 O.sub.5. An additive containing 0.01 to 1.0 mol % of at least one or more of MnO, Cr.sub.2 O.sub.3, or Co.sub.2 O.sub.3, and further, an additive containing 0.5 to 10.0 mol % of {Ba.sub.A, Ca.sub.(1-A) }SiO.sub.3 (where 0.ltoreq.A.ltoreq.1) may be added.

Abstract: A non-reducible dielectric ceramic composition comprising barium titanate as the main component, which contains an additive expressed by the formula Ba.sub..alpha. Ca.sub.1-.alpha. SiO.sub.3 (0.43.ltoreq..alpha..ltoreq.0.62) in an amount of from 0.1 to 6 mol parts per 100 mol parts of the barium titanate.

Abstract: The ceramic dielectric composition can be fired in a reducing or nonoxidizing atmosphere and has the formula:(Ba.sub.1-x Sr.sub.x O).sub.a Ti.sub.1-y Zr.sub.y O.sub.2 +.alpha.((1-z)MnO+zCoO)+.beta.((1-t)A.sub.2 O.sub.5 +tL.sub.2 O.sub.3)+wSiO.sub.2,wherein:A=Nb, Ta, V;L=Y or a rare earth element;0.002.ltoreq.x+y+1.7.alpha.z.ltoreq.0.250;0.000.ltoreq.z.ltoreq.0.980;0.990.ltoreq.a.ltoreq.1.020;0.010.ltoreq..alpha..ltoreq.15.00 (mol %);0.01.ltoreq..beta./.alpha..ltoreq.0.55;0.000.ltoreq.t.ltoreq.0.980; and,0.002.ltoreq.w.ltoreq.1.00 (wt %).