Abstract: A method for detecting abnormal vibration of a rolling mill including a collecting step of collecting vibration data of the rolling mill, a frequency analysis step of generating first analysis data by performing frequency analysis of the vibration data, a principal component analysis step of performing principal component analysis on the first analysis data by using reference data specified in advance on the basis of a normal state as a principal component and thereby generating evaluation data, which is a projection of the first analysis data onto the reference data, and an abnormal vibration detection step of extracting an outlier component from the evaluation data and the first analysis data and detecting an abnormality of the rolling mill from the extracted outlier component.

Abstract: An organic thin-film transistor comprising a gate electrode, a gate insulator layer, an organic semiconductor layer, a source electrode and a drain electrode wherein the organic semiconductor layer consists of the organic semiconductor material having the structure represented by the general formula (1) shown below, and the organic semiconductor layer has crystallinity: wherein L represents a bivalent linker group having the structure consisting of one group or any combination of two or more groups selected from unsubstituted or fluorinated benzene residue, unsubstituted or fluorinated thiophene residue, unsubstituted or fluorinated thienothophene residue; R1 represents carbonyl group, cyano group or C1-C6 fluorinated alkyl group; R2 represents halogen atom, cyano group, carbonyl group or acetyl group.

Abstract: An organic field effect transistor including an organic semiconductor layer constituting a current path between a source electrode and a drain electrode wherein the organic semiconductor layer is made of a conjugated polymer having a depletion layer and a conductivity of the organic semiconductor layer is controlled by using a gate electrode, wherein the depletion layer is formed by joining a reductive material being capable of forming Schottky contact with the organic semiconductor layer made of the conjugated polymer. There can be provided an organic field effect transistor using a conjugated polymer as an organic semiconductor and being capable of maintaining an insulation property.

Abstract: An organic thin-film transistor comprising a gate electrode, a gate insulator layer, an organic semiconductor layer, a source electrode and a drain electrode wherein the organic semiconductor layer consists of the organic semiconductor material having the structure represented by the general formula (1) shown below, and the organic semiconductor layer has crystallinity: wherein L represents a bivalent linker group having the structure consisting of one group or any combination of two or more groups selected from unsubstituted or fluorinated benzene residue, unsubstituted or fluorinated thiophene residue, unsubstituted or fluorinated thienothophene residue; R1 represents carbonyl group, cyano group or C1-C6 fluorinated alkyl group; R2 represents halogen atom, cyano group, carbonyl group or acetyl group.

Abstract: An organic field effect transistor including an organic semiconductor layer constituting a current path between a source electrode and a drain electrode wherein the organic semiconductor layer is made of a conjugated polymer having a depletion layer and a conductivity of the organic semiconductor layer is controlled by using a gate electrode, wherein the depletion layer is formed by joining a reductive material being capable of forming Schottky contact with the organic semiconductor layer made of the conjugated polymer. There can be provided an organic field effect transistor using a conjugated polymer as an organic semiconductor and being capable of maintaining an insulation property.