Abstract: A plasma processing apparatus is provided. The apparatus comprises: a plasma processing chamber; a substrate support arranged inside the plasma processing chamber, the substrate support including a lower electrode, an electrostatic chuck, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; an upper electrode arranged on an upper side of the substrate support; a source RF power supply configured to supply source RF power to generate plasma from a gas; a bias power supply configured to supply bias power; a DC power supply configured to apply a negative DC voltage; an RF filter electrically connected between the edge ring and the DC power supply, and including at least one variable passive element; and a controller configured to control the DC power supply and the variable passive element, and configured to control a voltage of the bias power within a permissible range.

Abstract: A control program for a plasma processing device that executes plasma processing by supplying source power to a plasma generation source and supplying bias power to a stage on which a substrate to be processed is placed, and the control program causes a computer to observe a peak-to-peak voltage between the source power and the bias power, and adjust the source power supplied to the plasma generation source, the bias power supplied to the stage, a direct-current voltage applied to an outer peripheral member disposed around the stage, and an impedance of a filter circuit connected between a source of the direct-current voltage and the outer peripheral member, the source power, the bias power, the direct-current voltage and the impedance being adjustment parameters for controlling a fluctuation width of the observed peak-to-peak voltage.

Abstract: A plasma processing method includes: plasma-processing a substrate placed on a surface of a placement table while causing a coolant of 0° C. or lower to flow through a coolant flow path formed inside the table; placing a dummy substrate on the surface of the placement table in place of the substrate; and removing a reaction product generated due to the plasma processing of the substrate by the plasma of the processing gas from a peripheral edge portion of the surface of the placement table while heating the surface of placement table by the plasma of the processing gas via the dummy substrate in a state where the dummy substrate is placed on the surface of the placement table.

Abstract: A plasma etching method includes a first process of generating a first plasma from a first processing gas that contains fluorine-containing gas and hydrogen-containing gas, by using a first radio frequency power, to etch a laminated film including a first silicon-containing film layer and a second silicon-containing film layer that is different from the first silicon-containing film layer, with the generated first plasma; and a second process that is performed after the first process and includes generating a second plasma from a second processing gas that contains bromine-containing gas, by using a second radio frequency power, to etch the laminated film with the generated second plasma. Unevenness is formed at an interface between the first silicon-containing film layer and the second silicon-containing film layer in the first process, and the unevenness is removed in the second process.

Abstract: An etching process method is provided that includes outputting a first high frequency power from a first high frequency power supply in a cryogenic temperature environment where the temperature of a substrate is controlled to be less than or equal to ?35° C., supplying a sulfur fluoride-containing gas and a hydrogen-containing gas, generating a plasma from the supplied sulfur fluoride-containing gas and hydrogen-containing gas, and etching a laminated film made up of laminated layers of silicon-containing films having different compositions with the generated plasma.

Abstract: A plasma processing apparatus includes a placing table having a placing surface on which a workpiece is placed to be subjected to a plasma processing; an elevator configured to raise and lower the workpiece with respect to the placing surface of the placing table; and an elevator controller configured to control the elevator, during a period until a transfer of the workpiece begins after a completion of the plasma processing on the workpiece, to hold the workpiece at a position where the placing surface of the placing table and the workpiece are spaced apart from each other by a distance that prevents an intrusion of a reaction product, and control the elevator, when the transfer of the workpiece begins, to raise the workpiece from the position where the workpiece is held.

Abstract: A plasma processing method includes: plasma-processing a substrate placed on a surface of a placement table while causing a coolant of 0° C. or lower to flow through a coolant flow path formed inside the table; placing a dummy substrate on the surface of the placement table in place of the substrate; and removing a reaction product generated due to the plasma processing of the substrate by the plasma of the processing gas from a peripheral edge portion of the surface of the placement table while heating the surface of placement table by the plasma of the processing gas via the dummy substrate in a state where the dummy substrate is placed on the surface of the placement table.

Abstract: A plasma etching method includes a first process of generating a first plasma from a first processing gas that contains fluorine-containing gas and hydrogen-containing gas, by using a first radio frequency power, to etch a laminated film including a first silicon-containing film layer and a second silicon-containing film layer that is different from the first silicon-containing film layer, with the generated first plasma; and a second process that is performed after the first process and includes generating a second plasma from a second processing gas that contains bromine-containing gas, by using a second radio frequency power, to etch the laminated film with the generated second plasma. Unevenness is formed at an interface between the first silicon-containing film layer and the second silicon-containing film layer in the first process, and the unevenness is removed in the second process.

Abstract: There is provided a plasma etching method. The plasma etching method includes generating plasma, by using a first high frequency power output from a first high frequency power supply, from a first processing gas that contains fluorine-containing gas, thereby etching a laminated film of a silicon oxide film and a silicon nitride film through the generated plasma, and generating plasma, by using the first high frequency power, from a second processing gas that contains bromine-containing gas, thereby etching the laminated film through the generated plasma.

Abstract: An etching process method is provided that includes outputting a first high frequency power from a first high frequency power supply in a cryogenic temperature environment where the temperature of a substrate is controlled to be less than or equal to ?35° C., supplying a sulfur fluoride-containing gas and a hydrogen-containing gas, generating a plasma from the supplied sulfur fluoride-containing gas and hydrogen-containing gas, and etching a laminated film made up of laminated layers of silicon-containing films having different compositions with the generated plasma.

Abstract: Disclosed is a method for etching a first region including a multi-layer film formed by providing silicon oxide films and silicon nitride films alternately, and a second region having a single silicon oxide film. The etching method includes: providing a processing target object including a mask provided on the first region and the second region within a processing container of a plasma processing apparatus; generating plasma of a first processing gas including a hydrofluorocarbon gas within the processing container that accommodates the processing target object; and generating plasma of a second processing gas including a fluorocarbon gas within the processing container that accommodates the processing target object. The step of generating the plasma of the first processing gas and the step of generating the plasma of the second processing gas are alternately repeated.

Abstract: There is provided a plasma etching method. The plasma etching method includes generating plasma, by using a first high frequency power output from a first high frequency power supply, from a first processing gas that contains fluorine-containing gas, thereby etching a laminated film of a silicon oxide film and a silicon nitride film through the generated plasma, and generating plasma, by using the first high frequency power, from a second processing gas that contains bromine-containing gas, thereby etching the laminated film through the generated plasma.

Abstract: An etching method includes generating a plasma from a hydrogen-containing gas and a fluorine-containing gas with high-frequency electric power for plasma generation. A first film including a silicon oxide film and a silicon nitride film is etched with the generated plasma in an environment at a temperature lower than or equal to ?30° C. The first etch rate of first etching that etches the first film and the second etch rate of second etching that etches a second film having a structure different from the structure of the first film are controlled, so that the difference between the first etch rate and the second etch rate is within ±20% of the first etch rate.

Abstract: An etching method includes generating a plasma from a hydrogen-containing gas and a fluorine-containing gas with high-frequency electric power for plasma generation. A first film including a silicon oxide film and a silicon nitride film is etched with the generated plasma in an environment at a temperature lower than or equal to ?30° C. The first etch rate of first etching that etches the first film and the second etch rate of second etching that etches a second film having a structure different from the structure of the first film are controlled, so that the difference between the first etch rate and the second etch rate is within ±20% of the first etch rate.

Abstract: Disclosed is a method for etching a first region including a multi-layer film formed by providing silicon oxide films and silicon nitride films alternately, and a second region having a single silicon oxide film. The etching method includes: providing a processing target object including a mask provided on the first region and the second region within a processing container of a plasma processing apparatus; generating plasma of a first processing gas including a hydrofluorocarbon gas within the processing container that accommodates the processing target object; and generating plasma of a second processing gas including a fluorocarbon gas within the processing container that accommodates the processing target object. The step of generating the plasma of the first processing gas and the step of generating the plasma of the second processing gas are alternately repeated.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including O2 gas or N2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including O2 gas or N2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.