Abstract: In one embodiment, an etching method includes (a) preparing a substrate having a first region including a first material that contains silicon, and a second region including a second material different from the first material, and (b) etching the first region by plasma generated from a processing gas containing a carbon- and fluorine-containing gas, a nitrogen-containing gas, and a metal halide gas. In (b), a flow rate of the metal halide gas is lower than a flow rate of the carbon- and fluorine-containing gas and a flow rate of the nitrogen-containing gas.

Abstract: An etching method includes etching a first silicon-containing film of a substrate by plasma of a first processing gas; and etching a second silicon-containing film of the substrate by plasma of a second processing gas. The etching of the first silicon-containing film and the etching of the second silicon-containing film are repeated a preset number of times.

Abstract: An etching method includes etching a first silicon-containing film of a substrate by plasma of a first processing gas; and etching a second silicon-containing film of the substrate by plasma of a second processing gas. The etching of the first silicon-containing film and the etching of the second silicon-containing film are repeated a preset number of times.