Abstract: According to one embodiment, a semiconductor memory device includes a pair of first plate-shaped portions that extends in a stacking direction of respective layers of a first stacked body and a first direction crossing the stacking direction, and is in contact with a second stacked body on both sides of the second stacked body in a second direction crossing the stacking direction and the first direction, a pair of second plate-shaped portions of which longitudinal direction is in the first direction, the pair of second plate-shaped portions extending through the first stacked body in the stacking direction on both sides of the pair of first plate-shaped portions in the second direction in positions apart from the pair of first plate-shaped portions, and a columnar portion that extends through the first stacked body in the stacking direction in a position between one of the first plate-shaped portions out of the pair of first plate-shaped portions and one of the second plate-shaped portions, that faces the one

Abstract: According to one embodiment, a semiconductor memory device includes a first stacked body disposed between the belt-like portions and stacked a plurality of first conductive layers via a first insulating layer, a second stacked body disposed in a region in the first stacked body and stacked a plurality of second insulating layers via the first insulating layer, a first pillar extending in the first stacked body in a stacking direction of the first stacked body, and a plurality of second pillars extending in the stacking direction on both sides of the second stacked body facing the belt-like portions and arranged in the first direction, in which the second pillars each include a plate-like portion disposed at a height position of each of the first conductive layers, and the adjacent second pillars are connected to each other by the plate-like portion.