Patents by Inventor Waylon Puckett

Waylon Puckett has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low temperature direct bonding of aluminum nitride to AlSiC substrates
    Patent number: 11524359
    Abstract: Disclosed herein are power electronic modules formed by directly bonding a heat sink to a dielectric substrate using transition liquid phase bonding.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: December 13, 2022
    Assignee: Georgia Tech Research Corporation
    Inventors: Waylon Puckett, Darshan G. Pahinkar, Samuel Graham
  • Low Temperature Direct Bonding Of Aluminum Nitride To AlSiC Substrates
    Publication number: 20200262000
    Abstract: Disclosed herein are power electronic modules formed by directly bonding a heat sink to a dielectric substrate using transition liquid phase bonding.
    Type: Application
    Filed: August 23, 2018
    Publication date: August 20, 2020
    Inventors: Waylon Puckett, Darshan G. Pahinkar, Samuel Graham