Abstract: A process to generate an etch-resistant nitride layer is provided. The process may include providing a substrate, the substrate including a silicon nitride layer formed by PECVD at an elevated deposition temperature, heating the substrate to an elevated implant temperature, and performing a hot implant by implanting the substrate at the elevated implant temperature, wherein an implanted silicon nitride layer is formed. The process may also include annealing the substrate after the hot implant at an elevated anneal temperature, wherein a relative etch rate of the implanted silicon nitride layer is reduced with respect to an unimplanted silicon nitride layer.

Abstract: Techniques for generating and maintaining a low stress nitride layer after a low temperature anneal, including the operations of providing a substrate, the substrate including a nitride layer formed by PECVD; heating the substrate to an elevated temperature; and performing a hot implant by implanting the substrate at the elevated temperature between 150° C. and 700° C.

Abstract: A method of manufacturing a vertical FET device includes providing a semiconductor substrate structure including a marker layer; forming a hardmask layer coupled to the semiconductor substrate structure, wherein the hardmask layer comprises a set of openings operable to expose an upper surface portion of the semiconductor substrate structure; etching the upper surface portion of the semiconductor substrate structure to form a plurality of fins; etching at least a portion of the marker layer; detecting the etching of the at least a portion of the marker layer; epitaxially growing a semiconductor layer in recess regions disposed between adjacent fins of the plurality of fins; forming a source metal layer on each of the plurality of fins; and forming a gate metal layer coupled to the semiconductor layer.

Abstract: A load lock in which the pumping speed is controlled so as to minimize the possibility of condensation is disclosed. The load lock is in communication with a vacuum pump and a valve. A controller is used to control the valve such that the supersaturation ratio within the load lock does not exceed a predetermined threshold, which is less than or equal to the critical value at which vapor condenses. In certain embodiments, a computer model is used to generate a profile, which may be a pumping speed profile or a pressure profile, and the valve is controlled according to the profile. In another embodiment, the load lock comprises a temperature sensor and a pressure sensor. The controller may calculate the supersaturation ratio based on these parameters and control the valve accordingly.

Abstract: Methods of using the alpha-2-adrenergic receptor agonist of Formula I: for improving vision such as in the treatment of ocular conditions such as presbyopia, poor night vision, visual glare, visual starbursts, visual halos, and some forms of myopia (e.g. night myopia) are described.

Abstract: The present invention provides compounds having store overload-induced Ca2+ release (SOICR) inhibitory activity and methods for producing and using the same. In particular, compounds of the invention is of the formula: R1—X1-L-X2—R2, wherein R1, X1, L, X2, and R2 are those defined herein.

Abstract: A method of manufacturing a vertical FET device includes providing a semiconductor substrate structure including a marker layer; forming a hardmask layer coupled to the semiconductor substrate structure, wherein the hardmask layer comprises a set of openings operable to expose an upper surface portion of the semiconductor substrate structure; etching the upper surface portion of the semiconductor substrate structure to form a plurality of fins; etching at least a portion of the marker layer; detecting the etching of the at least a portion of the marker layer; epitaxially growing a semiconductor layer in recess regions disposed between adjacent fins of the plurality of fins; forming a source metal layer on each of the plurality of fins; and forming a gate metal layer coupled to the semiconductor layer.

Abstract: A method of manufacturing a vertical FET device includes providing a semiconductor substrate structure including a marker layer; forming a hardmask layer coupled to the semiconductor substrate structure, wherein the hardmask layer comprises a set of openings operable to expose an upper surface portion of the semiconductor substrate structure; etching the upper surface portion of the semiconductor substrate structure to form a plurality of fins; etching at least a portion of the marker layer; detecting the etching of the at least a portion of the marker layer; epitaxially growing a semiconductor layer in recess regions disposed between adjacent fins of the plurality of fins; forming a source metal layer on each of the plurality of fins; and forming a gate metal layer coupled to the semiconductor layer.

Abstract: A load lock in which the pumping speed is controlled so as to minimize the possibility of condensation is disclosed. The load lock is in communication with a vacuum pump and a valve. A controller is used to control the valve such that the supersaturation ratio within the load lock does not exceed a predetermined threshold, which is less than or equal to the critical value at which vapor condenses. In certain embodiments, a computer model is used to generate a profile, which may be a pumping speed profile or a pressure profile, and the valve is controlled according to the profile. In another embodiment, the load lock comprises a temperature sensor and a pressure sensor. The controller may calculate the supersaturation ratio based on these parameters and control the valve accordingly.

Abstract: Methods of using the alpha-2-adrenergic receptor agonist of Formula I: for improving vision such as in the treatment of ocular conditions such as presbyopia, poor night vision, visual glare, visual starbursts, visual halos, and some forms of myopia (e.g. night myopia) are described.

Abstract: Methods of using the alpha-2-adrenergic receptor agonist of Formula I: for improving vision such as in the treatment of ocular conditions such as presbyopia, poor night vision, visual glare, visual starbursts, visual halos, and some forms of myopia (e.g. night myopia) are described.

Abstract: A method of manufacturing a vertical FET device includes providing a semiconductor substrate structure including a marker layer; forming a hardmask layer coupled to the semiconductor substrate structure, wherein the hardmask layer comprises a set of openings operable to expose an upper surface portion of the semiconductor substrate structure; etching the upper surface portion of the semiconductor substrate structure to form a plurality of fins; etching at least a portion of the marker layer; detecting the etching of the at least a portion of the marker layer; epitaxially growing a semiconductor layer in recess regions disposed between adjacent fins of the plurality of fins; forming a source metal layer on each of the plurality of fins; and forming a gate metal layer coupled to the semiconductor layer.

Abstract: Coupled inductor systems are disclosed in which transmitter and receiver inductors, or coils, are coupled in a configuration for wirelessly transferring power and/or data among them. In preferred implementations, the systems are used for transmitting both power and data in pairs of coupled coils. Primary side circuits in preferred embodiments of the systems of the invention employ Class D or Class G amplifiers.

Abstract: Methods of using the alpha-2-adrenergic receptor agonist of Formula I: for improving vision such as in the treatment of ocular conditions such as presbyopia, poor night vision, visual glare, visual starbursts, visual halos, and some forms of myopia (e.g. night myopia) are described.

Abstract: Methods of using the alpha-2-adrenergic receptor agonist of Formula I: for improving vision such as in the treatment of ocular conditions such as presbyopia, poor night vision, visual glare, visual starbursts, visual halos, and some forms of myopia (e.g. night myopia) are described.

Abstract: Methods of using the alpha-2-adrenergic receptor agonist of Formula I: for improving vision such as in the treatment of ocular conditions such as presbyopia, poor night vision, visual glare, visual starbursts, visual halos, and some forms of myopia (e.g. night myopia) are described.

Abstract: Coupled inductor systems are disclosed in which transmitter and receiver inductors, or coils, are coupled in a configuration for wirelessly transferring power and/or data among them. In preferred implementations, the systems are used for transmitting both power and data in pairs of coupled coils. Primary side circuits in preferred embodiments of the systems of the invention employ Class D or Class G amplifiers.

Abstract: Disclosed are advances in the arts with novel methods and apparatus for detecting faulty connections in an electrical system. Exemplary preferred embodiments include monitoring techniques and systems for monitoring signals at one or more device loads and analyzing the monitored signals for determining fault conditions at the device loads and/or at the main transmission lines. The invention preferably provides the capability to test and monitor electrical interconnections without fully activating the host system.

Abstract: Coupled inductor systems are disclosed in which transmitter and receiver inductors, or coils, are coupled in a configuration for wirelessly transferring power and/or data among them. In preferred implementations, the systems are used for transmitting both power and data in pairs of coupled coils. Primary side circuits in preferred embodiments of the systems of the invention employ Class D or Class G amplifiers.

Abstract: Coupled inductor signal transfer systems are disclosed in which transmitter and receiver coils are inductively coupled in a configuration for wirelessly transferring power and/or data signals. In preferred implementations, the systems may be used for transmitting both power and data. Preferred embodiments of the invention have at least one multi-tap coil on the primary side and/or secondary side of the system. The selection of taps enables the effective size and/or number of coils to be dynamically changed according to operational needs.