Abstract: Structural plates and methods of constructing arch-shaped structures using structural plates. Structural plates may include a combination of features including: an outer structural plate having adjacent circumferential apertures respectively spaced nominally greater than adjacent circumferential apertures of an inner structural plate; and the outer structural plate having nominally 5 enlarged or differently shaped circumferential apertures (as compared to circumferential apertures of the inner structural plate) such that the embodiment structural plates may be radiused to a variety of different radii while achieving desirable overlapping alignment of apertures along overlapping circumferential edges for receiving fasteners therein. Joiner plates may be provided for interconnecting structural plates along transverse edges in a non-overlapping arrangement, 10 thereby reducing the quantity of structural plate material that otherwise would be needed for a given circumferential length of the arch-shaped structure.

Abstract: Structural plates and methods of constructing arch-shaped structures using structural plates. Structural plates may include a combination of features including: an outer structural plate having adjacent circumferential apertures respectively spaced nominally greater than adjacent circumferential apertures of an inner structural plate; and the outer structural plate having nominally 5 enlarged or differently shaped circumferential apertures (as compared to circumferential apertures of the inner structural plate) such that the embodiment structural plates may be radiused to a variety of different radii while achieving desirable overlapping alignment of apertures along overlapping circumferential edges for receiving fasteners therein. Joiner plates may be provided for interconnecting structural plates along transverse edges in a non-overlapping arrangement, 10 thereby reducing the quantity of structural plate material that otherwise would be needed for a given circumferential length of the arch-shaped structure.

Abstract: An embodiment of the invention provides an on-chip heating system to both initially anneal and revive cycle-fatigued polymer ferroelectric materials utilized in memory devices. By heating the polymer ferroelectric material above its Curie temperature, the polymer ferroelectric material can crystallize as it cools. As such, the ferroelectric properties of the polymer are enhanced and/or restored.

Abstract: A combination wafer is manufactured by (i) forming a plurality of alternating dielectric and metal layers, (ii) forming a guard ring trench in the layers, (iii) forming a guard ring layer in the guard ring trench, and then repeating (i), (ii) with a slightly wider guard ring trench, and (iii). A number of layers are thus simultaneously etched and lined with a guard ring layer, but the number of layers is not so large so as to cause lithographic problems that may occur when a deep, narrow guard ring trench is formed. An upper one of the layers that are patterned is always made of silicon dioxide, which includes less carbon than lower polymer layers and allows for a carbon mask to be formed and be easily removed. The slightly wider guard ring trench each time the process is repeated overcomes lithographic alignment problems that may occur when the guard ring trenches are exactly the same size. Subsequent guard ring layers are partially formed on one another, and provide a moisture seal.

Abstract: According to one aspect of the invention, a memory array and a method of constructing a memory array are provided. An insulating layer is formed on a semiconductor substrate. A first metal stack is then formed on the insulating layer. The first metal stack is etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. The polymeric layer has a surface with a plurality of roughness formations. A second metal stack is formed on the polymeric layer with an interface layer, which is thicker than the heights of the roughness formations. Then the second metal stack is etched to form second metal lines. Memory cells are formed wherever a second metal line extends over a first metal line.

Abstract: According to one aspect of the invention, a memory array and a method of constructing a memory array are provided. An insulating layer is formed on a semiconductor substrate. A first metal stack is then formed on the insulating layer. The first metal stack is etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. The polymeric layer has a surface with a plurality of roughness formations. A second metal stack is formed on the polymeric layer with an interface layer, which is thicker than the heights of the roughness formations. Then the second metal stack is etched to form second metal lines. Memory cells are formed wherever a second metal line extends over a first metal line.