Abstract: A system for measuring the temperature of a semiconductor wafer 12 comprises a light source 14, a photodetector 20 which is operable to determine light intensity, and a mirror 18 in a predetermined fixed position from a beam splitter 16. The components are positioned such that light from the light source 14 impinges the beam splitter 16 and subsequently reflects off the mirror 18 and the wafer 12 and is received by the photodetector 20. Changes in the temperature of the wafer 12 are calculated based upon changes in the intensity of the received light which depends upon the expansion/contraction of the wafer. The absolute temperature may be calculated based on a known reference temperature and the changes in wafer 12 temperature. A second system and method for measuring the temperature of a semiconductor wafer which includes the use of a plurality of mirrors and two beam splitters is also disclosed.

Abstract: A process for planarizing the surface of a semiconductor wafer, after the wafer has been processed to form nonplanar topography layers on the blank, polished wafer, by mechanically removing material from this surface by abrasion until a desired planarity is attained. The mechanical planarization prevents step coverage problems encountered in further processing, avoids multiple step prior art planarizing methods, and can be effectively controlled by several simple methods.

Abstract: A processing system wherein the process gas flow passages have a modified contour which reduces particle entrainment. This modified cross section increases the thickness of its stagnant boundary layer near most of a wall area of the piping, so that any particle which is deposited on the walls of the gas piping is much more likely to stay there permanently, and not be removed by subsequent local velocity maxima in turbulent flow.

Abstract: A rapid thermal processing apparatus and method wherein a transparent (e.g. quartz) vacuum wall is sealed to the process chamber by a radially elastically expandable metallic seal, e.g. a hollow metallic ring with a spring in its core, which has a soft surface portion which deforms inelastically to make a seal.

Abstract: A radiant heating processing apparatus and method for a rapid thermal processing system, wherein only the base of the reflector module is directly water cooled. The sides of the reflector module are not directly water cooled; instead, the module is made to be a slip fit into a chamber which does have water cooled walls. Thus, in applications where it is desired to be able to fit a rapid thermal processing radiant heating source through a restricted clearance, especially in application where it is desired to be able to insert the module through a vacuum flange, the necessary clearance is reduced by the width which would otherwise be required for water cooling of the sidewalls.

Abstract: A method and apparatus is provided for removing submicron sized particles from the surface of a silicon semiconductor wafer (38). Conventional cleaning methods are capable of only removing particles that are about 1 micron or larger in size. The present invention provides a way to increase the submicron particles in size so that they are removable by the known methods. The silicon semiconductor wafer (38) is cooled by a refrigeration unit (36) or by exposure to liquid nitrogen (74). The cooled wafer (38) is then exposed to a condensable material (42) which is allowed to condense on the surface of the wafer (38). The condensable material will surround any particles that are on the surface and cause them to grow in size due to the formation of frozen crystals. Without allowing the crystals to melt, the enlarged particles then are removed by any of the known methods.