Abstract: A moisture collection apparatus is provided to collect and store percolating ground water for increased water absorption by foliage growing above the moisture collection apparatus. In one embodiment, the moisture collection apparatus includes a first plurality of strands extending along a first direction, a second plurality of strands extending along a second direction and connected to at least one of the first plurality of strands, a plurality of channels extending along at least one of the first direction and the second direction, and a plurality of openings between adjacent strands of the first plurality of strands and adjacent strands of the second plurality of strands. In another embodiment, the first direction is substantially orthogonal to the second direction, such that the moisture collection apparatus forms a grid-like pattern of channels.

Abstract: A moisture collection apparatus is provided to collect and store percolating ground water for increased water absorption by foliage growing above the moisture collection apparatus. In one embodiment, the moisture collection apparatus includes a first plurality of strands extending along a first direction, a second plurality of strands extending along a second direction and connected to at least one of the first plurality of strands, a plurality of channels extending along at least one of the first direction and the second direction, and a plurality of openings between adjacent strands of the first plurality of strands and adjacent strands of the second plurality of strands. In another embodiment, the first direction is substantially orthogonal to the second direction, such that the moisture collection apparatus forms a grid-like pattern of channels.

Abstract: Systems and methods are described for transfer of a thin-film via implantation, wafer bonding, and separation. A method for transfer of a thin-film, includes: implanting a source crystal with ions along a crystallographic channel and at a temperature of at least approximately 200° C. to i) form a strained region and ii) define the thin-film; then bonding a surface of the thin-film to a target wafer; and then separating a) the target wafer and the thin-film from b) a remainder of the source crystal along the strained region. The systems and methods provide advantages because the electrical carriers in the crystal, and consequently the thin-film, are not deactivated and the quality of the transferred thin-film is improved.

Abstract: A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200° C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Abstract: A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Abstract: A method for preparing a silicon-on-insulator material having a relatively defect-free Si overlayer involves the implanting of oxygen ions within a silicon body and the interruption of the oxygen-implanting step to implant Si ions within the silicon body. The implanting of the oxygen ions develops an oxide layer beneath the surface of the silicon body, and the Si ions introduced by the Si ion-implanting step relieves strain which is developed in the Si overlayer during the implanting step without the need for any intervening annealing step. By relieving the strain in this manner, the likelihood of the formation of strain-induced defects in the Si overlayer is reduced. In addition, the method can be carried out at lower processing temperatures than have heretofore been used with SIMOX processes of the prior art. The principles of the invention can also be used to relieve negative strain which has been induced in a silicon body of relatively ordered lattice structure.

Abstract: A tissue processing cassette adapted for processing small tissue specimens includes a base frame and a lid frame, each including a central opening and a face adapted to abut the face of the other in registered relationship in a closed position. A porous screen spans the central opening of each of the base frame and the lid frame, the screens being spaced apart when the cassette is closed, whereby the base frame, the lid frame and the screens define an enclosed area for holding a tissue specimen during preparation for histological examination. The porous screen permits processing fluids to flow through the enclosure, but resists entry of particulate contaminants into the enclosure, and also resists outflow of small tissue specimens from the enclosure during processing. The enclosure has an interior perimeter surface that includes no sharp corners that can trap a small specimen.