Abstract: A digital output sensor includes a sensing structure that outputs a differential sensing signal and includes at least one sensing element. An integrated circuit includes a substrate including signal conditioning circuitry for conditioning the sensing signal that includes a differential amplifier coupled to receive the sensing signal and provide first and second differential outputs and a comparator having input transistors coupled to receive outputs from the differential amplifier. The comparator also includes first and second current-mirror loads that provide differential drive currents and are coupled to the input transistors in a cross coupled configuration to provide hysteresis. An output driver is coupled to receive the differential drive currents. An output stage includes at least one output transistor which is coupled to the output driver for providing a digital output for the sensor. A voltage regulator is coupled to receive a supply voltage and output at least one regulated supply voltage.

Abstract: A digital output sensor includes a sensing structure that outputs a differential sensing signal and includes at least one sensing element. An integrated circuit includes a substrate including signal conditioning circuitry for conditioning the sensing signal that includes a differential amplifier coupled to receive the sensing signal and provide first and second differential outputs and a comparator having input transistors coupled to receive outputs from the differential amplifier. The comparator also includes first and second current-mirror loads that provide differential drive currents and are coupled to the input transistors in a cross coupled configuration to provide hysteresis. An output driver is coupled to receive the differential drive currents. An output stage includes at least one output transistor which is coupled to the output driver for providing a digital output for the sensor. A voltage regulator is coupled to receive a supply voltage and output at least one regulated supply voltage.

Abstract: A digital output sensor (110) includes a sensing structure (105) including at least one sensing element. The sensing structure (105) outputs a differential sensing signal (106, 107). An integrated circuit (100) includes a substrate (101) including signal conditioning circuitry for conditioning the sensing signal (106, 107). The signal conditioning circuitry includes a differential amplifier (115) coupled to receive the sensing signal and provide first and second differential outputs (116, 117), and a comparator (120) having input transistors (Q27, Q28) coupled to receive outputs from the differential amplifier. The comparator (120) also includes first and second current-mirror loads (Q19/Q21 and Q22/Q20) coupled to the input transistors (Q27, Q28) in a cross coupled configuration to provide hysteresis, wherein the first and second current-mirror loads provide differential drive currents (121,122). An output driver (125) is coupled to receive the differential drive currents (121, 122).

Abstract: A Hall-effect magnetic sensor comprises a p-type Hall element and an n-type epitaxial Hall element. The p-type element can be implanted directly on top of the n-type element. The merged Hall elements can be biased in parallel to provide a nearly zero-bias depletion layer throughout for isolation. Electrical contacts to the n-type element can be diffused down through the p-type element and positioned to partially obstruct current flow in the p-type element. Electrical contacts can be diffused into the p-type element. Each bias contact of the p-type element can be connected to respective bias contacts of the n-type element in a parallel fashion. Then, an output signal can be taken at the sense contacts of the n-type element in order to provide improved magnetic responsivity. Further provided is a method for manufacturing the Hall-effect magnetic sensor.

Abstract: A digital output sensor (110) includes a sensing structure (105) including at least one sensing element. The sensing structure (105) outputs a differential sensing signal (106, 107). An integrated circuit (100) includes a substrate (101) including signal conditioning circuitry for conditioning the sensing signal (106, 107). The signal conditioning circuitry includes a differential amplifier (115) coupled to receive the sensing signal and provide first and second differential outputs (116, 117), and a comparator (120) having input transistors (Q27, Q28) coupled to receive outputs from the differential amplifier. The comparator (120) also includes first and second current-mirror loads (Q19/Q21 and Q22/Q20) coupled to the input transistors (Q27, Q28) in a cross coupled configuration to provide hysteresis, wherein the first and second current-mirror loads provide differential drive currents (121,122). An output driver (125) is coupled to receive the differential drive currents (121, 122).

Abstract: A volumetric fluid flow sensor (100) includes a flow channel (120) for flowing a fluid therein; and a diaphragm (110) having an outer surface within the flow channel (120). The diaphragm (110) includes at least one flow disrupting feature mechanically coupled to or emerging from the outer surface of the diaphragm (110). A sensing structure (126) is coupled to the diaphragm (110) for generating a sensing signal responsive to a pressure signal on the diaphragm (110).

Abstract: A Hall-effect magnetic sensor comprises a p-type Hall element and an n-type epitaxial Hall element. The p-type element can be implanted directly on top of the n-type element. The merged Hall elements can be biased in parallel to provide a nearly zero-bias depletion layer throughout for isolation. Electrical contacts to the n-type element can be diffused down through the p-type element and positioned to partially obstruct current flow in the p-type element. Electrical contacts can be diffused into the p-type element. Each bias contact of the p-type element can be connected to respective bias contacts of the n-type element in a parallel fashion. Then, an output signal can be taken at the sense contacts of the n-type element in order to provide improved magnetic responsivity. Further provided is a method for manufacturing the Hall-effect magnetic sensor.

Abstract: A volumetric fluid flow sensor (100) includes a flow channel (120) for flowing a fluid therein; and a diaphragm (110) having an outer surface within the flow channel (120). The diaphragm (110) includes at least one flow disrupting feature mechanically coupled to or emerging from the outer surface of the diaphragm (110). A sensing structure (126) is coupled to the diaphragm (110) for generating a sensing signal responsive to a pressure signal on the diaphragm (110).

Abstract: A sensor apparatus includes a heating element comprising an upstream side and a downstream side. A first heat sensing set is generally configured adjacent to the upstream side of the heating element and comprises a first sensing element and a second sensing element, the first and second sensing elements configured in a serpentine, interdigitated pattern. A second heat sensing set can be configured adjacent to the downstream side of the heating element and comprises a third sensing element and a fourth sensing element, the third and fourth sensing elements configured in a serpentine, interdigitated pattern.

Abstract: A voltage regulator operable as a voltage follower while a fusible link is closed and in a regulated voltage mode when the fusible link becomes open. The voltage regulator can be formed on monolithic semiconductor chips. Patterned thin films including aluminum and nickel-iron, and aluminum and polycrystalline silicon, comprise the fusible link. With the fusible link closed, the voltage regulator output is an analog of positive polarity variable voltage levels at the regulator input. Systems powered by the voltage regulator are allowed to be programmed until system programming requiring variable voltage levels is complete. Afterwards, a negative polarity voltage is applied to the regulator input causing a large current to pass through the fusible link once the system programming is completed. Current thereby causes the fusible link to become opened and enables the voltage regulator to begin operating at a regulated voltage in response to positive voltage input.

Abstract: A plurality of bridge transducers are provided in a dual arrangement. An output terminal from each transducer is coupled to differential inputs of an amplifier. Each of the other outputs from the transducers are respectively coupled together and used to control a bias for dual active loads. The transducers may be implemented within monolithic silicon integrated circuits, using bipolar technology with Hall effect, magnetoresistive or piezoresistive sensing elements for the bridge. A single Hall effect transducer may be coupled to the inputs of the differential amplifier, and a center tap terminal used to control a bias for dual active loads.

Abstract: An integrated circuit magnetoresistive speed and direction sensor generally utilizes an AMR bridge circuit thereby allowing for increased air gap performance as compared to conventional Hall-effect element based sensors. The AMR sensor is capable of sensing ring magnets or bar magnets magnetized with one or more magnet poles along the desired travel. The number of poles of the magnet should be optimized based upon the application design. In order to obtain speed and direction information, two bridge circuits can be placed within proximity (I.e., the exact location and shape of the bridge can be determined based upon the target and desired performance) of each other. The signals of the two bridge circuits can be compared on integrated electronics. The bridges are generally rotated 45 degrees to reduce and/or eliminate offsets, which provide the sensor with a large air gap performance.