Patents by Inventor Wayne L. Gladfelter

Wayne L. Gladfelter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device For Providing Vapors Of A Solid Precursor To A Processing Device
    Publication number: 20080268143
    Abstract: The present invention relates to a device for providing vapors of at least one solid precursor intended to supply a physico-chemical processing device, comprising an enclosure capable of containing particles of the solid precursor and comprising an inlet and an outlet, the outlet being intended to be connected to the physico-chemical processing device; and means for circulating a gas between the inlet and the outlet to put the particles of the solid precursor in the form of a fluidized bed, and to convey to the outlet vapors of the solid precursor.
    Type: Application
    Filed: November 30, 2005
    Publication date: October 30, 2008
    Inventors: Constantin Vahlas, Brigitte Caussat, Francois Senocq, Wayne L. Gladfelter
  • Process for forming hafnium oxide films
    Patent number: 6683011
    Abstract: A process for forming a hafnium oxide-containing film on a substrate such as silicon that includes introducing an anhydrous hafnium nitrate-containing precursor into a reactor containing the substrate, and converting the precursor into the hafnium oxide-containing film on the substrate by chemical vapor deposition.
    Type: Grant
    Filed: November 14, 2001
    Date of Patent: January 27, 2004
    Assignee: Regents of the University of Minnesota
    Inventors: Ryan C. Smith, Tiezhong Ma, Stephen A. Campbell, Wayne L. Gladfelter
  • Process for forming hafnium oxide films
    Publication number: 20030092287
    Abstract: A process for forming a hafnium oxide-containing film on a substrate such as silicon that includes introducing an anhydrous hafnium nitrate-containing precursor into a reactor containing the substrate, and converting the precursor into the hafnium oxide-containing film on the substrate by chemical vapor deposition.
    Type: Application
    Filed: November 14, 2001
    Publication date: May 15, 2003
    Inventors: Ryan C. Smith, Tiezhong Ma, Stephen A. Campbell, Wayne L. Gladfelter
  • Chemical vapor deposition of iron, ruthenium, and osmium
    Patent number: 5372849
    Abstract: A method is provided for forming films comprising Fe, Ru or Os employing the techniques of chemical vapor deposition to decompose a vapor comprising an organometallic compound of the formula (a): (CO).sub.4 ML or (b): M.sub.2 [.mu.-.eta.:.eta..sup.4 -C.sub.4 ](CO).sub.6 ; wherein L is a two-electron donor ligand and each R is H, halo, OH, alkyl, perfluoroalkyl or aryl; so as to deposit a coating comprising one or more of said metals on the surface of a substrate.
    Type: Grant
    Filed: January 18, 1994
    Date of Patent: December 13, 1994
    Assignees: Minnesota Mining and Manufacturing Company, Regents of the University of Minnesota
    Inventors: Fred B. McCormick, Wayne L. Gladfelter, Yoshihide Senzaki
  • Chemical vapor deposition of iron, ruthenium, and osmium
    Patent number: 5314727
    Abstract: A method is provided for forming films comprising Fe, Ru or Os employing the techniques of chemical vapor deposition to decompose a vapor comprising an organometallic compound of the formula (a): (CO).sub.4 ML or (b): M.sub.2 [.mu.-.eta.:.eta..sup.4 -C.sub.4 ](CO).sub.6 ; wherein L is a two-electron donor ligand and each R is H, halo, OH, alkyl, perfluoroalkyl or aryl; so as to deposit a coating comprising one or more of said metals on the surface of a substrate.
    Type: Grant
    Filed: July 28, 1992
    Date of Patent: May 24, 1994
    Assignee: Minnesota Mining & Mfg. Co./Regents of the University of Minnesota
    Inventors: Fred B. McCormick, Wayne L. Gladfelter, Yoshihide Senzaki
  • Chemical vapor deposition of aluminum films using dimethylethylamine alane
    Patent number: 5191099
    Abstract: This invention provides essentially pure dimethylethylamine alane, which is useful for the chemical vapor deposition of thin films of aluminum.
    Type: Grant
    Filed: September 5, 1991
    Date of Patent: March 2, 1993
    Assignee: Regents of the University of Minnesota
    Inventors: Wayne L. Gladfelter, Everett C. Phillips
  • Process for the chemical vapor deposition of aluminum
    Patent number: 4923717
    Abstract: A method for forming aluminum films is provided comprising employing the techniques of chemical vapor deposition to thermally decompose a vapor comprising a aluminum hydride subsequent to the treatment of the substrate with a Group IVB or VB metal complex, so as to deposit a mirror-like coating of aluminum on the surface of a substrate.
    Type: Grant
    Filed: March 17, 1989
    Date of Patent: May 8, 1990
    Assignee: Regents of the University of Minnesota
    Inventors: Wayne L. Gladfelter, David C. Boyd
  • Process for metal nitride deposition
    Patent number: 4832986
    Abstract: A method for forming metal nitride films is provided comprising employing the techniques of chemical vapor deposition to thermally decompose a vapor comprising a dialkyl(Group III metal) azide, so as to deposit a film of the corresponding metal nitride on the surface of a substrate.
    Type: Grant
    Filed: July 6, 1987
    Date of Patent: May 23, 1989
    Assignee: Regents of the University of Minnesota
    Inventors: Wayne L. Gladfelter, Daniel R. Mantell, John F. Evans, Roland K. Schulze