Abstract: A bulk superconductor device is disclosed, comprising a single grain RE-BCO element incorporating reinforcing fibres. The single grain (RE)BCO element comprises RE-211 pinning sites disposed in a RE-123 matrix and further comprises Ag. The reinforcing fibres comprise a ceramic such as SiC and a refractory metal such as W. The reinforcing fibres comprise a core formed of the refractory metal and a ceramic cladding surrounding the core. The device may be manufactured by a top seeded melt growth process or by a top seeded infiltration growth process.

Abstract: A compound of formula MOL-M-L, wherein M is a 5 or 6-coordinate metal, L is a bidentate ligand, and MOL is a compound of formula (II): (II) wherein X is C and R\ R2, R3, R4, R5, R6, R7, R8, R9, R10, R11 and R12 are as defined herein. In another embodiment, a system comprises a substrate and a compound of the present disclosure immobilized on the substrate. In still another embodiment, a method comprises introducing a reagent to a substrate presenting the compound of the present disclosure.

Abstract: A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and/or high-density and/or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads. The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and/or spin detection.