Patents by Inventor Wayne M. Lytle

Wayne M. Lytle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NITRIDE ETCH FOR CONSISTENT STEP HEIGHT FOR TSV REVEAL IN THE VIA MID FLOW
    Publication number: 20240371777
    Abstract: Embodiments disclosed herein include an interposer. In an embodiment, the interposer comprises a substrate with a first surface and a second surface opposite from the first surface. In an embodiment, a via is provided through the substrate, where a portion of the via extends past the second surface. In an embodiment, a first layer is over the substrate, where the first layer is an electrically insulating material. In an embodiment, a second layer is over the first layer and over the portion of the via that extends past the second surface.
    Type: Application
    Filed: May 1, 2023
    Publication date: November 7, 2024
    Inventors: Arijit KOLEY, Ashish BHATIA, Wayne M. LYTLE, Stephen SUDIRGO, Nora BERG, Patrick WHITING, Michael MUSORRAFITI, Olawale Taiwo OLADEINDE, Emily TIMMINS, Beatrice MURIUNGI, Matthew TAYLOR
  • Preservation of fine pitch redistribution lines
    Patent number: 9721886
    Abstract: An embodiment includes a semiconductor apparatus comprising: a redistribution layer (RDL) including a patterned RDL line having two RDL sidewalls, the RDL comprising a material selected from the group comprising Cu and Au; protective sidewalls directly contacting the two RDL sidewalls; a seed layer including the material; and a barrier layer; wherein (a) the RDL line has a RDL line width orthogonal to and extending between the two RDL sidewalls, and (b) the seed and barrier layers each include a width parallel to and wider than the RDL line width. Other embodiments are described herein.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: August 1, 2017
    Assignee: Intel Corporation
    Inventors: Kevin J. Lee, Hiten Kothari, Wayne M. Lytle
  • PRESERVATION OF FINE PITCH REDISTRIBUTION LINES
    Publication number: 20160181196
    Abstract: An embodiment includes a semiconductor apparatus comprising: a redistribution layer (RDL) including a patterned RDL line having two RDL sidewalls, the RDL comprising a material selected from the group comprising Cu and Au; protective sidewalls directly contacting the two RDL sidewalls; a seed layer including the material; and a barrier layer; wherein (a) the RDL line has a RDL line width orthogonal to and extending between the two RDL sidewalls, and (b) the seed and barrier layers each include a width parallel to and wider than the RDL line width. Other embodiments are described herein.
    Type: Application
    Filed: June 28, 2013
    Publication date: June 23, 2016
    Inventors: Kevin J. Lee, Hiten Kothari, Wayne M. Lytle