Patents by Inventor Wayne M. Trickle

Wayne M. Trickle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a voltage programming element
    Patent number: 6812122
    Abstract: Method for forming a first one time, voltage programmable logic element in a semiconductor substrate of first conductivity type, forming a first layer beneath a surface of the substrate, the first layer having a second conductivity type. A trench is formed through the surface and passing through the first layer. The trench comprises an interior surface, a dielectric material lining the interior surface and a conductive material filling the lined trench. The first logic element is configured so that a predetermined voltage or higher applied between the conductive material and the first layer causes a breakdown within a region of the trench.
    Type: Grant
    Filed: March 12, 2002
    Date of Patent: November 2, 2004
    Assignee: International Business Machines Corporation
    Inventors: Claude L. Bertin, Erik L. Hedberg, Russell J. Houghton, Max G. Levy, Rick L. Mohler, William R. Tonti, Wayne M. Trickle
  • Antifuses and methods for forming the same
    Publication number: 20020093074
    Abstract: A first one time, voltage programmable logic element is provided in a semiconductor substrate of first conductivity type that comprises a first layer beneath a surface of the substrate, the first layer having a second conductivity type; and a trench formed through the surface and passing through the first layer. The trench comprises an interior surface, a dielectric material lining the interior surface and a conductive material filling the lined trench. The first logic element is configured so that a predetermined voltage or higher applied between the conductive material and the first layer causes a breakdown within a region of the trench. A second one time, voltage programmable logic element is provided in a semiconductor substrate of first conductivity type that comprises a first layer formed in a surface of the substrate, the first layer having a second conductivity type; and a trench formed through the surface and passing through the first layer.
    Type: Application
    Filed: March 12, 2002
    Publication date: July 18, 2002
    Applicant: International Business Machines Corporation
    Inventors: Claude L. Bertin, Erik L. Hedberg, Russell J. Houghton, Max G. Levy, Rick L. Mohler, William R. Tonti, Wayne M. Trickle
  • Electrically programmable antifuses and methods for forming the same
    Patent number: 6388305
    Abstract: A first one time, voltage programmable logic element is provided in a semiconductor substrate of first conductivity type that comprises a first layer beneath a surface of the substrate, the first layer having a second conductivity type; and a trench formed through the surface and passing through the first layer. The trench comprises an interior surface, a dielectric material lining the interior surface and a conductive material filling the lined trench. The first logic element is configured so that a predetermined voltage or higher applied between the conductive material and the first layer causes a breakdown within a region of the trench. A second one time, voltage programmable logic element is provided in a semiconductor substrate of first conductivity type that comprises a first layer formed in a surface of the substrate, the first layer having a second conductivity type; and a trench formed through the surface and passing through the first layer.
    Type: Grant
    Filed: December 17, 1999
    Date of Patent: May 14, 2002
    Assignee: International Business Machines Corporation
    Inventors: Claude L. Bertin, Erik L. Hedberg, Russell J. Houghton, Max G. Levy, Rick L. Mohler, William R. Tonti, Wayne M. Trickle