Patents by Inventor Wayne S. Miller

Wayne S. Miller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radio-frequency carbon-nanotube field effect transistor devices with local backgates and methods for making same
    Patent number: 10224413
    Abstract: A radio-frequency (RF) carbon-nanotube (CNT) field effect transistor (FET) device. The device includes a source contact, a drain contact, semi-conducting CNTs positioned between the source and drain contacts, high-? gate dielectric, and a local backgate positioned below the semi-conducting CNTs, in which the local backgate is capable of RF performance and is capable of being used in a backgate burnout process used to enhance the semiconducting to metallic tube ratio of the device.
    Type: Grant
    Filed: January 30, 2012
    Date of Patent: March 5, 2019
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Joseph A. Payne, Wayne S. Miller, Monica P. Lilly, Silai V. Krishnaswamy
  • Carbon mixture ohmic contact for carbon nanotube transistor devices
    Patent number: 9570695
    Abstract: A cobalt-carbon (Co—C) eutectic metal alloy ohmic contact for a radio-frequency (RF) carbon nanotube (CNT) field effect transistor (FET) device and a method of manufacturing same are disclosed. Embodiments of a method include providing a graphite crucible, placing Co and a C source within the graphite crucible, heating the graphite crucible containing the Co and C source such that the Co and C source combine with graphite from the graphite crucible to thereby form a Co—C eutectic metal alloy, and creating an ohmic contact by depositing the Co—C eutectic metal alloy directly on top surfaces of CNTs of a RF CNT FET device such that the Co—C eutectic metal alloy is in direct contact with the CNTs. The Co—C eutectic metal alloy ohmic contact formed in this manner is consistently stabile and uniform and functions as a high work function layer that also serves as an adhesion layer to the CNTs.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: February 14, 2017
    Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATION
    Inventors: Monica P. Lilly, Matthew J. Walker, Wayne S. Miller, John X. Przybysz, Andre E. Berghmans
  • CARBON MIXTURE OHMIC CONTACT FOR CARBON NANOTUBE TRANSISTOR DEVICES
    Publication number: 20160336524
    Abstract: A cobalt-carbon (Co—C) eutectic metal alloy ohmic contact for a radio-frequency (RF) carbon nanotube (CNT) field effect transistor (FET) device and a method of manufacturing same are disclosed. Embodiments of a method include providing a graphite crucible, placing Co and a C source within the graphite crucible, heating the graphite crucible containing the Co and C source such that the Co and C source combine with graphite from the graphite crucible to thereby form a Co—C eutectic metal alloy, and creating an ohmic contact by depositing the Co—C eutectic metal alloy directly on top surfaces of CNTs of a RF CNT FET device such that the Co—C eutectic metal alloy is in direct contact with the CNTs. The Co—C eutectic metal alloy ohmic contact formed in this manner is consistently stabile and uniform and functions as a high work function layer that also serves as an adhesion layer to the CNTs.
    Type: Application
    Filed: July 25, 2016
    Publication date: November 17, 2016
    Inventors: Monica P. Lilly, Matthew J. Walker, Wayne S. Miller, John X. Przybysz, Andre E. Berghmans
  • Cobalt-carbon eutectic metal alloy ohmic contact for carbon nanotube field effect transistors
    Patent number: 9401488
    Abstract: A cobalt-carbon (Co—C) eutectic metal alloy ohmic contact for a radio-frequency (RF) carbon nanotube (CNT) field effect transistor (FET) device and a method of manufacturing same are disclosed. Embodiments of a method include providing a graphite crucible, placing Co and a C source within the graphite crucible, heating the graphite crucible containing the Co and C source such that the Co and C source combine with graphite from the graphite crucible to thereby form a Co—C eutectic metal alloy, and creating an ohmic contact by depositing the Co—C eutectic metal alloy directly on top surfaces of CNTs of a RF CNT FET device such that the Co—C eutectic metal alloy is in direct contact with the CNTs. The Co—C eutectic metal alloy ohmic contact formed in this manner is consistently stabile and uniform and functions as a high work function layer that also serves as an adhesion layer to the CNTs.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: July 26, 2016
    Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATION
    Inventors: Monica P. Lilly, Matthew J. Walker, Wayne S. Miller, John X. Przybysz, Sr., Andre E. Berghmans
  • COBALT-CARBON EUTECTIC METAL ALLOY OHMIC CONTACT FOR CARBON NANOTUBE FIELD EFFECT TRANSISTORS
    Publication number: 20160181557
    Abstract: A cobalt-carbon (Co—C) eutectic metal alloy ohmic contact for a radio-frequency (RF) carbon nanotube (CNT) field effect transistor (FET) device and a method of manufacturing same are disclosed. Embodiments of a method include providing a graphite crucible, placing Co and a C source within the graphite crucible, heating the graphite crucible containing the Co and C source such that the Co and C source combine with graphite from the graphite crucible to thereby form a Co—C eutectic metal alloy, and creating an ohmic contact by depositing the Co—C eutectic metal alloy directly on top surfaces of CNTs of a RF CNT FET device such that the Co—C eutectic metal alloy is in direct contact with the CNTs. The Co—C eutectic metal alloy ohmic contact formed in this manner is consistently stabile and uniform and functions as a high work function layer that also serves as an adhesion layer to the CNTs.
    Type: Application
    Filed: December 18, 2014
    Publication date: June 23, 2016
    Inventors: Monica P. Lilly, Matthew J. Walker, Wayne S. Miller, John X. Przybysz, SR., Andre E. Berghmans