Abstract: A system and method for detecting a handshake is described, the system comprising a first electronic wristband and a second electronic wristband. The first electronic wristband comprises a first processing unit, a first accelerometer and a first wireless transceiver module. The first processing unit is configured to receive acceleration data from the first accelerometer and determine a current state of the first electronic wristband. The second electronic wristband comprises a second processing unit, a second accelerometer and a second wireless transceiver module. The second processing unit is configured to receive acceleration data from the second accelerometer and determine a current state of the second electronic wristband.

Abstract: A new method for forming integrated circuits is disclosed. The method includes the following procedures. A substrate over which a high integration region and a low integration region beside the high integration region are formed. Then dummy layer is formed on the low integration region. Next, a dielectric layer is formed on the high integration region and the dummy layer on the low integration region. Finally, the dielectric layer is planarized.

Abstract: A method of fabricating a DRAM capacitor includes the step of forming an insulated layer and an etching stop layer successively on a substrate having a device structure. A contact window is formed within the etching stop layer and the insulated layer. A conductive layer is formed on the etching layer to fill in the contact window and patterned to serve as a lower electrode of the capacitor. A highly doped dielectric layer is then formed on the lower electrode and a thermal process is performed to diffuse the dopants inside the highly doped dielectric layer into the surface of the lower electrode. The dielectric layer is removed. A capacitor dielectric layer and an upper electrode are successively formed on the lower electrode to complete the fabrication of the capacitor.

Abstract: The present invention relates to a method of forming a contact hole of a DRAM on the semiconductor wafer. The semiconductor wafer comprises a substrate, a first dielectric layer, two bit lines on the first dielectric layer, a second dielectric layer, and a photo-resist layer comprising an opening to define the pattern of the contact hole. The method comprises performing a first anisotropic etching process to vertically remove a portion of the two dielectric layers and two bit lines to grossly form the contact hole, removing the photo-resist layer in its entirety, performing a thermal oxidation to form a silicon oxide layer on the side walls of the two bit lines, then forming a silicon nitride layer on the surface of the contact hole, and performing a dry etching to remove the silicon nitride layer. There is a silicon oxide layer and a silicon nitride layer between the bit line and the contact hole, and the contact area of the contact hole will not be reduced.

Abstract: An improved method of fabricating a node capacitor for a dynamic random access memory (DRAM) process is disclosed. The process includes depositing a first interpoly dielectric (IPD1) layer over a substrate, patterning a first photoresist layer on the first interpoly dielectric layer, thereby defining a trench. A trench is etched in the first interpoly dielectric layer using the first photoresist layer as a mask. A first polysilicon layer is deposited on the first interpoly dielectric layer. The first polysilicon layer is etched to expose the first interpoly dielectric layer, then forming a landing pad over the substrate. In order to a polycide layer and a second interpoly dielectric (IPD2) layer are deposited, patterning a second photoresist layer, thereby defining a bit line structure. A bit line structure is formed, then depositing a spacer on the bit line structure. A second polysilicon layer is deposited, patterning a third photoresist layer, thereby defining a bottom electrode.

Abstract: A method of fabricating a self-aligned contact window includes forming an undoped dielectric layer on a substrate having a least gate structure. The dopants are implanted into a pre-determined region of the undoped dielectric layer and the dielectric layer with the dopants is then removed. A self-aligned contact is therefore completed.

Abstract: A method of fabricating a dynamic random access memory includes forming a dummy layer over the isolation layer, in which the dummy layer has a higher etching selectivity than oxide. A dielectric layer is applied to isolate the bit lines. Then, a passivation layer is formed over the entire structure and a node contact opening is formed thereon. A liner oxide layer is then formed in the node contact opening to isolate the bit lines and the electrode of the capacitor. The node contact opening has a larger misalignment tolerance.