Abstract: A method of forming an Al—Zn—Si—Mg alloy coating on a steel strip includes dipping steel strip into a bath of molten Al—Zn—Si—Mg alloy and forming a coating of the alloy on exposed surfaces of the steel strip. The method also includes controlling conditions in the molten coating bath and downstream of the coating bath so that there is a uniform Al/Zn ratio across the surface of the coating formed on the steel strip. An Al—Zn—Mg—Si coated steel strip includes a uniform Al/Zn ratio on the surface or the outermost 1-2 ?m of the Al—Zn—Si—Mg alloy coating.

Abstract: A method for electroplating small workpieces includes the steps of: (A) providing a rotatable barrel which has an axis of rotation and a plurality of spaced-apart partition plates disposed one above the other; (B) mounting the barrel in a plating tank with the axis of rotation being inclined with respect to a horizontal line; (C) feeding a batch of the workpieces into the barrel; and (D) allowing the workpieces to fall down by gravity from one of the partition plates to the other one of the partition plates by rotating the barrel.

Abstract: A method for electroplating small workpieces includes the steps of: (A) providing a rotatable barrel which has an axis of rotation and a plurality of spaced-apart partition plates disposed one above the other; (B) mounting the barrel in a plating tank with the axis of rotation being inclined with respect to a horizontal line; (C) feeding a batch of the workpieces into the barrel; and (D) allowing the workpieces to fall down by gravity from one of the partition plates to the other one of the partition plates by rotating the barrel.

Abstract: An in situ dual-stage etch endpoint detection system is disclosed. The system includes an etch chamber, an interferometry endpoint monitoring system, and a non-IEP endpoint monitoring system. The etch chamber includes an electrostatic chuck (ESC), a top electrode, and a bottom electrode. The ESC is designed to support a wafer having a spacer layer formed over a gate structure. The interferometry endpoint (IEP) monitoring system is designed to monitor an interference photon beam reflected by the top of spacer layer and the reflection beam on interface of bottom of spacer during a first etch operation. The non-IEP endpoint monitoring system monitors a second etch operation by monitoring an etch time. A first etch operation implementing the IEP monitoring system is discontinued, leaving a thin spacer layer to be etched during the second etch operation.

Abstract: A method for fabricating a spacer of a gate structure is provided. The method performing a first etch process implementing a first etchant gas. The first etch process is configured to implement an interferometry endpoint (IEP) detection method to detect a removal of a portion of a spacer layer having a specific thickness from over the surface of the substrate, thus leaving a thin spacer layer. The method further includes performing a second etch process for a predetermined period of time implementing a second etchant gas. The second etch process is configured to remove the thin spacer layer, leaving the spacer for the gate structure.