Patents by Inventor We LI

We LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240059658
    Abstract: Provided herein are compounds, pharmaceutical compositions including such compounds, and methods of using such compounds to treat diseases or disorders associated with MDM2 activity.
    Type: Application
    Filed: September 10, 2020
    Publication date: February 22, 2024
    Inventors: Muxiang Zhou, Lubing Gu, We Li, Zhongzhi Wu
  • Publication number: 20170330533
    Abstract: A method for image displaying and an associated electronic device are provided. The method for image displaying includes the following steps: obtaining resolution adjusting information; reducing the current resolution to a first resolution in the resolution adjusting information; drawing an image according to the first resolution; displaying the image drawn in the first resolution on the screen.
    Type: Application
    Filed: October 21, 2016
    Publication date: November 16, 2017
    Inventors: Xiang XU, We LI, Xiaobin WEI, Kai ZHANG
  • Patent number: 8764228
    Abstract: An illumination device including a base, a light bar, and a cover is provided. The base has a cavity. The light bar is disposed at the bottom of the cavity and includes a plurality of dot light sources arranged along a first axial direction. The cover is assembled to the base for correspondingly covering the light bar and has a plurality of openings. The distribution density of the openings increases from a corresponding location of a dot light source towards two opposite ends along the first axial direction. A light source and a light module are also provided. Another illumination device including a base and a plurality of light sources is further provided.
    Type: Grant
    Filed: March 2, 2012
    Date of Patent: July 1, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Hsin-Hsiang Lo, Chun-Chuan Lin, Kuo-Tung Tiao, Chao-We Li, Hung-Lieh Hu, Chen-Kun Chen
  • Patent number: 8270240
    Abstract: An OTP memory array includes a bit line coupled to a plurality of memory banks. Each memory bank includes a plurality of memory cells, a footer, and a bias device, and is associated with a current mirror. When a memory cell is activated (e.g., for reading) the memory bank including the activated memory cell is referred to as an activated memory bank and other banks are referred to as deactivated memory banks. A current tracking device serves to compensate for bit line leakage current in deactivated memory cells in the activated memory bank. Further, footers and bias devices in deactivated memory banks and associated current mirrors are configured to reduce/eliminate bit line current leakage through deactivated memory cells in deactivated memory banks.
    Type: Grant
    Filed: May 20, 2010
    Date of Patent: September 18, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sung-Chieh Lin, Kuoyuan (Peter) Hsu, Jiann-Tseng Huang, We-Li Liao
  • Publication number: 20110026354
    Abstract: An OTP memory array includes a bit line coupled to a plurality of memory banks. Each memory bank includes a plurality of memory cells, a footer, and a bias device, and is associated with a current mirror. When a memory cell is activated (e.g., for reading) the memory bank including the activated memory cell is referred to as an activated memory bank and other banks are referred to as deactivated memory banks. A current tracking device serves to compensate for bit line leakage current in deactivated memory cells in the activated memory bank. Further, footers and bias devices in deactivated memory banks and associated current mirrors are configured to reduce/eliminate bit line current leakage through deactivated memory cells in deactivated memory banks.
    Type: Application
    Filed: May 20, 2010
    Publication date: February 3, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Sung-Chieh Lin, Kuoyuan (Peter) Hsu, Jiann-Tseng Huang, We-Li Liao
  • Patent number: 6790778
    Abstract: A method for capping over a copper layer. A copper layer is deposited overlying a substrate. The copper surface is treated with hydrogen-containing plasma to remove copper oxides formed thereon, thereby suppressing copper hillock formation. The treated copper surface is treated again with nitrogen-containing plasma to improve adhesion of the copper surface. A capping layer is formed on the copper layer.
    Type: Grant
    Filed: September 10, 2003
    Date of Patent: September 14, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Lung Cheng, Ying-Lang Wang, We-Li Chen