Patents by Inventor We-Li Chen

We-Li Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for capping over a copper layer
    Patent number: 6790778
    Abstract: A method for capping over a copper layer. A copper layer is deposited overlying a substrate. The copper surface is treated with hydrogen-containing plasma to remove copper oxides formed thereon, thereby suppressing copper hillock formation. The treated copper surface is treated again with nitrogen-containing plasma to improve adhesion of the copper surface. A capping layer is formed on the copper layer.
    Type: Grant
    Filed: September 10, 2003
    Date of Patent: September 14, 2004
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Lung Cheng, Ying-Lang Wang, We-Li Chen