Abstract: Apparatus and method for the formation of copper indium gallium diselenide (CIGS) photovoltaic devices are disclosed. In one aspect, an inline production apparatus and method is described comprising sputter deposition and solution based selenization, followed by thermal annealing. Copper, indium and gallium are sputter deposited on one or more substrates in a sputter chamber. The substrates are then coated with a solution comprising a source of selenium in a selenium coating chamber. After coating with the selenium based solution, the substrates are heated in an annealing chamber to form a CIGS layer on the substrate. Substrates are conveyed though each of the chambers in a continuous manner, which provides for low-cost, fast throughput, inline production of CIGS photovoltaic devices.