Abstract: A tracking system comprising: a transmitter configured to steer an RF beam across a detection range, a passive RFID tag configured to be enabled for locating substantially when located in the center of the RF beam of the transmitter, and an RFID reader configured to detect the tag 104 once enable.

Abstract: A tracking system comprising: a transmitter configured to steer an RF beam across a detection range, a passive RFID tag configured to be enabled for locating substantially when located in the centre of the RF beam of the transmitter, and an RFID reader configured to detect the tag 104 once enable.

Abstract: A method is proposed for producing a thin-film transistor (TFT), the method comprising forming a substrate, applying a ZnO-based precursor solution onto the substrate to form a ZnO-based channel layer, annealing the channel layer, forming a source electrode and a drain electrode on the channel layer, forming a dielectric layer on the channel layer and forming a gate electrode on the dielectric layer.

Abstract: A magnetic material comprises 50-80 wt % of Cobalt, 9-15 wt % of Nickel, 10-25 wt % of Rhenium, 0.1 to 2.0 wt % of Phosphorus, and 5-10 wt % of Tungsten or Platinum. It can be formed as a layer having good vertical magnetic properties (e.g. when magnetised it can provide a high magnetic field strength in the direction perpendicular to the plane of the layer). The layer preferably has a thickness of above 1 ?m. It can be formed by electroplating. The layer is useful for inclusion in a MEMS device.

Abstract: A field effect electron emitting apparatus comprising a substrate, a plurality of wires embedded in the substrate, at least a portion of each wire being exposed from the substrate and extending generally perpendicularly therefrom and including magnetic material, wherein the average wire spacing is less than 30 ?m, the average spacing height ratio is between 1 and 3 and the average wire aspect ratio is greater than 3. Also a method of manufacturing an electron emitting apparatus, a field effect display having such a field effect electron emitting apparatus, an illumination apparatus having such a field effect electron emitting apparatus, and a backlight apparatus for a liquid crystal display having such a field effect electron emitting apparatus.

Abstract: A field effect electron emitting apparatus using nano-wire electron emitters is disclosed where each nano-wire electron emitter may be grown in a pore of an insulating layer and/or may have at least a portion exposed from the pore. A method of manufacturing a field effect electron emitting apparatus is also disclosed. The field effect electron emitting apparatus may be used in a display.

Abstract: A method is proposed for producing a thin-film transistor (TFT), the method comprising forming a substrate, applying a ZnO-based precursor solution onto the substrate to form a ZnO-based channel layer, annealing the channel layer, forming a source electrode and a drain electrode on the channel layer, forming a dielectric layer on the channel layer and forming a gate electrode on the dielectric layer.

Abstract: A field effect electron emitting apparatus is prepared by depositing a plurality of nano-wires 216 onto a substrate 200 having a cathode layer 214. The deposition occurs by suspending the nano-wires 216 in a plating solution, and plating the substrate with a metal layer 202, thereby entrapping the nano-wires. The nano-wires 216 are composed of an electrically-conductive magnetic material, and the deposition process is carried out in the presence of a magnetic field perpendicular to the substrate 200 so that the nano-wires 216 are aligned by the field.

Abstract: A material comprising cobalt (Co), platinum (Pt) and phosphorus (P) having a composition of 94-98 wt % Co, 0-1 wt % Pt and 2-4 wt % P. The material may be subjected to annealing at a temperature between 100 and 500 degrees Celsius. The material is formed by electroplating a substrate in a suitable electrochemical bath. The electroplated CoPtP material forms a layer on the substrate. The CoPtP material has enhanced perpendicular magnetic properties and may be advantageous for use in microelectromechanical system (MEMS) devices.

Abstract: A field effect electron emitting apparatus comprising a substrate, a plurality of wires embedded in the substrate, at least a portion of each wire being exposed from the substrate and extending generally perpendicularly therefrom and including magnetic material, wherein the average wire spacing is less than 30 ?m, the average spacing height ratio is between 1 and 3 and the average wire aspect ratio is greater than 3. Also a method of manufacturing an electron emitting apparatus, a field effect display having such a field effect electron emitting apparatus, an illumination apparatus having such a field effect electron emitting apparatus, and a backlight apparatus for a liquid crystal display having such a field effect electron emitting apparatus.

Abstract: A magnetic material comprises 50-80 wt % of Cobalt, 9-15 wt % of Nickel, 10-25 wt % of Rhenium, 0.1 to 2.0 wt % of Phosphorus, and 5-10 wt % of Tungsten or Platinum. It can be formed as a layer having good vertical magnetic properties (e.g. when magnetised it can provide a high magnetic field strength in the direction perpendicular to the plane of the layer). The layer preferably has a thickness of above 1 ?m. It can be formed by electroplating. The layer is useful for inclusion in a MEMS device.

Abstract: A field effect electron emitting apparatus is prepared by depositing a plurality of nano-wires 216 onto a substrate 200 having a cathode layer 214. The deposition occurs by suspending the nano-wires 216 in a plating solution, and plating the substrate with a metal layer 202, thereby entrapping the nano-wires. The nano-wires 216 are composed of an electrically-conductive magnetic material, and the deposition process is carried out in the presence of a magnetic field perpendicular to the substrate 200 so that the nano-wires 216 are aligned by the field.

Abstract: A magnetic material comprises 50-80 wt % of Cobalt, 9-15 wt% of Nickel, 10-25 wt% of Rhenium, 0.1 to 2.0 wt% of Phosphorus, and 5-10 wt % of Tungsten or Platinum. It can be formed as a layer having good vertical magnetic properties (e.g. when magnetised it can provide a high magnetic field strength in the direction perpendicular to the plane of the layer). The layer preferably has a thickness of above 1 ?m. It can be formed by electroplating. The layer is useful for inclusion in a MEMS device.

Abstract: A magnetic anodized aluminium oxide has a layer of anodized aluminium oxide forming a housing for an array of nanowires of a magnetic material formed in nanopores in the layer of anodized aluminium oxide. The nanowires have their side walls embedded in the nanopores in the layer of anodized aluminium oxide for preventing oxidation of the side walls. A corresponding method is also disclosed.