Patents by Inventor Wei C. Jin

Wei C. Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10777366
    Abstract: Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: September 15, 2020
    Assignee: Intel Corporation
    Inventors: Donald S. Gardner, Zhaohui Chen, Wei C. Jin, Scott B. Clendenning, Eric C. Hannah, Tomm V. Aldridge, John L. Gustafson
  • Publication number: 20190103229
    Abstract: Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.
    Type: Application
    Filed: March 26, 2018
    Publication date: April 4, 2019
    Inventors: Donald S. Gardner, Zhaohui Chen, Wei C. Jin, Scott B. Clendenning, Eric C. Hannah, Tomm V. Aldridge, John L. Gustafson
  • Patent number: 9978533
    Abstract: An energy storage device includes a middle section (610) including a plurality of double-sided porous structures (500), each of which contain multiple channels (511) in two opposing surfaces (515, 525) thereof, an upper section (620) comprising a single-sided porous structure (621) containing multiple channels (622) in a surface (625) thereof, and a lower section (630) including a single-sided porous structure (631) containing multiple channels (632) in a surface (635) thereof.
    Type: Grant
    Filed: February 21, 2012
    Date of Patent: May 22, 2018
    Assignee: Intel Corporation
    Inventors: Donald S. Gardner, Tomm V. Aldridge, Charles W. Holzwarth, Cary L. Pint, Zhaohui Chen, Wei C. Jin, Yang Liu, John L. Gustafson
  • Patent number: 9409767
    Abstract: An energy storage structure includes an energy storage device containing at least one porous structure (110, 120, 510, 1010) that contains multiple channels (111, 121), each one of which has an opening (112, 122) to a surface (115, 116, 515, 516, 1015, 1116) of the porous structure, and further includes a support structure (102, 402, 502, 1002) for the energy storage device. In a particular embodiment, the porous structure and the support structure are both formed from a first material, and the support structure physically contacts a first portion (513, 813, 1213) of the energy storage device and exposes a second portion (514, 814, 1214) of the energy storage device.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: August 9, 2016
    Assignee: Intel Corporation
    Inventors: Donald S. Gardner, Zhaohui Chen, Wei C. Jin, Eric C. Hannah, John L. Gustafson, Tomm V. Aldridge
  • Publication number: 20150049414
    Abstract: An energy storage device includes a middle section (610) including a plurality of double-sided porous structures (500), each of which contain multiple channels (511) in two opposing surfaces (515, 525) thereof, an upper section (620) comprising a single-sided porous structure (621) containing multiple channels (622) in a surface (625) thereof, and a lower section (630) including a single-sided porous structure (631) containing multiple channels (632) in a surface (635) thereof.
    Type: Application
    Filed: February 21, 2012
    Publication date: February 19, 2015
    Inventors: Donald S. Gardner, Tomm V. Aldridge, Charles W. Holzwarth, Cary L. Pint, Zhaohui Chen, Wei C. Jin, Yang Liu, John L. Gustafson
  • Publication number: 20130279137
    Abstract: An energy storage structure includes an energy storage device containing at least one porous structure (110, 120, 510, 1010) that contains multiple channels (111, 121), each one of which has an opening (112, 122) to a surface (115, 116, 515, 516, 1015, 1116) of the porous structure, and further includes a support structure (102, 402, 502, 1002) for the energy storage device. In a particular embodiment, the porous structure and the support structure are both formed from a first material, and the support structure physically contacts a first portion (513, 813, 1213) of the energy storage device and exposes a second portion (514, 814, 1214) of the energy storage device.
    Type: Application
    Filed: November 3, 2011
    Publication date: October 24, 2013
    Inventors: Donald S. Gardner, Zhaohui Chen, Wei C. Jin, Eric C. Hannah, John L. Gustafson, Tomm V. Aldridge
  • Publication number: 20130273261
    Abstract: Methods of increasing an energy density of an energy storage device involve increasing the capacitance of the energy storage device by depositing a material into a porous structure of the energy storage device using an atomic layer deposition process, by performing a procedure designed to increase a distance to which an electrolyte penetrates within channels of the porous structure, or by placing a dielectric material into the porous structure. Another method involves annealing the energy storage device in order to cause an electrically conductive substance to diffuse to a surface of the structure and form an electrically conductive layer thereon. Another method of increasing energy density involves increasing the breakdown voltage and another method involves forming a pseudocapacitor. A method of increasing an achievable power output of an energy storage device involves depositing an electrically conductive material into the porous structure.
    Type: Application
    Filed: September 30, 2011
    Publication date: October 17, 2013
    Inventors: Donald S. Gardner, Zhaohui Chen, Wei C. Jin, Scott B. Clendenning, Eric C. Hannah, Tomm V. Aldridge, John L. Gustafson