Abstract: An electronic device includes a flexible substrate and a conductive wire structure. The conductive wire structure is disposed on the flexible substrate and includes a first segment, a second segment, a third segment, a fourth segment, a first joint portion, a second joint portion, a third joint portion and a fourth joint portion. A first opening is surrounded by the first segment, the second segment, the first joint portion and the second joint portion. A second opening is surrounded by the third segment, the fourth segment, the third joint portion and the fourth joint portion. Along a first direction, a ratio of a first width sum of widths of the first segment, the second segment, the third segment and the fourth segment to a second width sum of widths of the first joint portion and the third joint portion is in a range from 0.8 to 1.2.

Abstract: A teleprompter includes a connecting bracket, a prompting optical mechanism, a transferring board, and a supporting seat. The connecting bracket is used to support a monitor assembly. The prompting optical mechanism includes a main housing, a front frame, a rear frame, and a splitter. The transferring board is detachably connected to the rear frame. The transferring board has a photography opening. The supporting seat has an assembly board, and a horizontal carrier. The horizontal carrier is connected to a top end of the assembly board. The assembly board is connected to one side of the connecting bracket, and can be adjusted to different positions of the connecting bracket. Therefore, the horizontal carrier can be adjusted to different heights corresponding with the photography opening of the transferring board.

Abstract: A method of quantifying zonal flow in a multi-lateral well is described. A first taggant is flowed to a first lateral, and a second taggant is flowed to a second lateral. A first produced fluid that includes the first taggant is flowed from the first lateral into a production tubing. A second produced fluid that includes the second taggant is flowed from the second lateral into the production tubing. A produced stream including the first produced fluid and the second produced fluid is flowed uphole through the production tubing. An amount of the first taggant and an amount of the second taggant in the produced stream are measured. Production of fluid from the multi-lateral well proceeds without ceasing throughout the method.

Abstract: One aspect of the present disclosure pertains to a device. The device includes a memory macro having a frontside and a backside along a vertical direction. The memory macro includes edge strap areas extending lengthwise along a first direction at edges of the memory macro, a memory cell area having a plurality of memory cells, where the memory cell area is disposed between the edge strap areas along a second direction perpendicular to the first direction, and a middle strap area extending lengthwise along the first direction and disposed between the edge strap areas along the second direction, where the middle strap area divides the memory cell area into two memory cell domains. The middle strap area includes a feedthrough circuit that routes a power signal line of one of the plurality of memory cells to the backside of the memory macro.

Abstract: An interconnection structure is provided to include a substrate, a first metal trench, a boron nitride dielectric, a second metal trench, and a metal via. The substrate is formed with a first metal trench. The boron nitride dielectric is disposed over the substrate. The second metal trench is formed in the boron nitride dielectric. The metal via is disposed to interconnect the first metal trench and the second metal trench.

Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: A memory device is provided, including an array of bit cells and a set of tracking cells. The set of tracking cells is arranged adjacent to the array of bit cells along a first direction. The set of tracking cells includes a set of first tracking cells configured to perform a read tracking operation and a set of second tracking cells configured to perform a write tracking operation and arranged adjacent to the set of first tracking cells along a second direction. First tracking cells in the set of first tracking cells are coupled in series with each other and arranged along the second direction, and second tracking cells in the set of second tracking cells are coupled in series with each other and arranged along the second direction.

Abstract: A method including: providing a design data of an integrated circuit (IC), the design data comprising a first cell; identifying a first conductive line in the first cell as a critical internal net of the first cell, wherein the first conductive line is electrically connected between an input terminal of the first cell and an output terminal of the first cell; providing a library of the first cell, wherein the library includes a table of timing or power parameters of the first cell based on a multidimensional input set associated with the critical internal net; updating the design data by determining a timing or power value of the first cell based on the table; performing a timing analysis on the updated design data; and forming a photomask based on the updated design data.

Abstract: A RF shielding socket, including a first tab shield portion on a first side of the socket; a second tab shield portion on a second side of the socket; an extension shield portion extending along a first direction between the first tab shield portion and the second tab shield portion, the extension shield portion including a plurality of clips, each of the clips protruding from the extension shield portion in a second direction traverse to the first direction; a plurality of pins positioned on a third side of the socket, the third side extending between the first side and the second side, a subset of the plurality of pins include a tabbed feature protruding from a body of the respective pin, wherein the tabbed feature of each of the subset of the plurality of pins is in contact with at least one of the clips of the plurality of clips.

Abstract: Systems, apparatus, articles of manufacture, and methods are disclosed to implement seamless switching of dynamic range and/or refresh rate on display devices. An example apparatus disclosed herein causes a display to activate panel self refresh after a command to switch a graphics output from a first dynamic range to a second dynamic range, the graphics output provided to the display. The example apparatus also switches the graphics output from the first dynamic range to the second dynamic range after the panel self refresh is activated. The example apparatus further causes the display to deactivate the panel self refresh after the graphics output is switched to the second dynamic range.

Abstract: A sensing apparatus for a non-volatile memory includes two current mirrors, three switches, a voltage control circuit and a judging circuit. The input terminal of the first current mirror receives a reference current. A mirroring terminal of the first current mirror is connected with a data line. The first switch is connected between the data line and the voltage control circuit. The second switch is connected between the data line and a ground voltage. The third switch is connected between the voltage control circuit and a supply voltage. The input terminal of the second current mirror receives a bias current. The mirroring terminal of the second current mirror is connected with the judging node. The voltage control circuit and the judging circuit are connected with the judging node.

Abstract: The present disclosure relates to a system and a method for streaming data accessing. The method includes: transmitting a TCP request for streaming data; obtaining a TCP response containing an identification key; transmitting a UDP request for the streaming data to a space addressable by the identification key; and, obtaining the streamlining data.

Abstract: Disclosed are compounds of formula (I): in which L1, L2, LD1, LD2, R5, and R6 are defined. Also provided are pharmaceutical compositions containing such a compound a method of treating cancer using the compound.

Abstract: A server comprising a circuitry, wherein the circuitry is configured to perform: generating a virtual chatbot via a machine learning model; determining an emotion of the virtual chatbot; feeding information of the emotion into the machine learning model; and setting the virtual chatbot in a live streaming room. According to the present disclosure, the communication between the viewers and AI V-Liver may be improved. Moreover, the quality of the live streaming platform with AI V-Livers may also be improved. Therefore, the user experience may also be improved.

Abstract: Provided is an electronic package, in which a conductive structure and an encapsulation layer covering the conductive structure are arranged on one side of a carrier structure having a circuit layer, and an electronic component is arranged on the other side of the carrier structure. The rigidity of the carrier structure is increased by the encapsulation layer, and problems such as warpage or wavy deformations caused by increasing the volume of the electronic package due to functional requirements can be eliminated.

Abstract: A carrying structure is provided and is defined with a main area and a peripheral area adjacent to the main area, where a plurality of packaging substrates are disposed in the main area in an array manner, a plurality of positioning holes are disposed in the peripheral area, and a plurality of positioning traces are formed along a part of the edges of the plurality of positioning holes, such that the plurality of positioning traces are formed with notches. Therefore, a plurality of positioning pins on the machine can be easily aligned and inserted into the plurality of positioning holes by the design of the plurality of positioning traces.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a first active region in which first semiconductor layers and second semiconductor layers are alternatingly stacked over a first lower fin element. In a plan view, the active region includes a first portion and a second portion narrower than the first portion. The method also includes removing the first semiconductor layers of the first active region. The second semiconductor layers of the first portion of the first active region form first nanostructures, and the second semiconductor layers of the second portion of the first active region form second nanostructures. The method also includes forming a first gate stack to surround the first nanostructures, and forming a second gate stack to surround the second nanostructures.

Abstract: A semiconductor structure according to the present disclosure includes a first memory cell that includes a first pull-down transistor and a first pull-up transistor sharing a first gate structure extending along a first direction, a second pull-down transistor and a second pull-up transistor sharing a second gate structure extending along the first direction, a first pass-gate transistor having a third gate structure spaced apart but aligned with the second gate structure along the first direction, and a second pass-gate transistor having a fourth gate structure spaced apart but aligned with the first gate structure along the first direction, a frontside interconnect structure disposed over the first memory device, a backside interconnect structure disposed below the first memory device. A source of the second pull-down transistor is electrically coupled to the backside interconnect structure by way of a first backside contact via.

Abstract: A circuit compensation method applied to pattern displacement includes: disposing at least one chip on a carrier; measuring a shift of the chip, performing circuit position compensation on a predetermined pattern of a redistribution layer, and calculating a resistance difference of the pattern before and after the circuit position compensation; estimating a circuit proportion and a range of resistance variation in the pattern needed for resistance compensation after the circuit position compensation according to the resistance difference; determining a compensation position and a scheme of circuit proportion and adjusting a circuit width, area, length, pattern, or combination thereof of a circuit within the circuit proportion according to the resistance difference; outputting a picture file of the pattern after the circuit position and resistance compensation; and forming the redistribution layer according to the picture file and electrically connecting the redistribution layer to the chip.

Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels, that include hybrid thin-film transistor structures formed using semiconducting-oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. A drive transistor in the display pixel may be a top-gate semiconducting-oxide thin-film transistor and a switching transistor in the display pixel may be a top-gate silicon thin-film transistor. A storage capacitor in the display may include a conductive semiconducting-oxide electrode.