Abstract: A semiconductor device includes a sensing element including a sensing electrode and a filter covering the sensing electrode. The filter includes a first work function layer and a second work function layer. The first work function layer is over the sensing electrode. The second work function layer is over the first work function layer. A work function value of the second work function layer is greater than a work function value of the first work function layer, and an atomic percentage of metal in the second work function layer is greater than an atomic percentage of metal in the first work function layer.

Abstract: A semiconductor device includes: a semiconductor substrate and a memory cell located on a surface of the semiconductor substrate; the semiconductor substrate comprises a well area, an isolation structure, a first doped area and a second doped area; the isolation structure, the first doped area and the second doped area are located in the well area, and the isolation structure at least is located between the first doped area and the second doped area; the memory cell is located on a top surface of the second doped area and is electrically connected with the second doped area.

Abstract: Effective two-phase cooling is provided to large devices even with a length of ˜10 cm due to a channel configuration to achieve formed minichannels comprising porous wall structures. Baseplate features comprise a substrate defining the minichannels, with each minichannel formed between a pair of side walls and a bottom surface thereof. The side walls of the plurality of minichannels respectively form terminal walls for each of the respective minichannels. A microgap configuration is formed between the terminal wall of at least one of the plurality of minichannels and an adjacent layer.

Abstract: A device in a chamber is provided. The device comprises at least one die. The at least one die comprise a first voltage generator, a dielectric layer and a first voltage regulator circuit. The first voltage generator is charged to have a first induced voltage by induced charges generated in response to a first voltage of a first electrode of a chuck in the chamber. The dielectric layer surrounds the first voltage generator to isolate the first voltage generator from the first electrode. The first voltage regulator circuit is coupled to the first voltage generator to receive the first induced voltage and generates a first power supply voltage according to the first induced voltage for a first circuit in the device.

Abstract: Embodiments of the present application provide a magnetic resonance scanning and imaging method, and a magnetic resonance imaging system. The method includes: determining a pulse to be adjusted in a scan sequence, the pulse to be adjusted including a first radio-frequency pulse and a first gradient pulse applied along with the first radio-frequency pulse; determining an adjustment factor based on the first gradient pulse and a minimum repetition time related to a specific absorption rate of radio-frequency energy; adjusting the scan sequence based on the adjustment factor; and, using the adjusted scan sequence, performing a diagnostic scan on a site to be examined, to obtain a magnetic resonance image.

Abstract: Provided in the present invention are a magnetic resonance imaging system and method. The magnetic resonance imaging method comprises: performing m NEXs, wherein in each NEX, a plurality of fat suppression pulses are applied, each of the plurality of fat suppression pulses has thereafter m gradient recalled echo sequences, and each NEX acquires q groups of initial image data, where q=m*n, n is the number of fat suppression pulses applied in each NEX, n is greater than 1, and m is greater than 1; and reconstructing a magnetic resonance image on the basis of at least a portion of the initial image data acquired in the m NEXs.

Abstract: The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate, including active regions arranged at intervals, where the active region includes a source, a drain, and a channel region; a word line, where the word line is connected to the channel region and extends along a first direction; a bit line, where the bit line is connected to the drain or the source and extends along a second direction, the first direction being different from the second direction; and a magnetic memory cell, connected to the source or the drain.

Abstract: A magnetic resonance system, a magnetic resonance imaging sequence, and an optimization method are provided.

Abstract: A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The semiconductor structure includes: a substrate; a gate trench located in the substrate; a gate oxide layer located on a side wall and a bottom of the gate trench; and a gate conductive layer located on a surface of the gate oxide layer, a top of the gate conductive layer being lower than a top of the gate trench. The gate oxide layer includes an ion implantation area. A bottom of the ion implantation area is higher than a bottom of the gate conductive layer and lower than the top of the gate conductive layer, and a top of the ion implantation area is higher than or flush with the top of the gate conductive layer.

Abstract: Embodiments of the present application relate to a resistive memory device and a preparation method thereof. The preparation method includes: providing a base; forming bit line trenches in the base; forming a resistive material layer on a sidewall and the bottom of the bit line trench; and forming a bit line structure in the bit line trench through filling, wherein a variable resistor structure includes the bit line structure and the resistive material layer.

Abstract: A method includes applying a first voltage to a source of a first transistor of a detection unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detection unit. The first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage. A pre-exposure reading operation is performed to the detection unit. Light of an exposure apparatus is illuminated to a gate of the second transistor after applying the first and second voltages. A post-exposure reading operation is performed to the detection unit. Data of the pre-exposure reading operation is compared with the post-exposure reading operation. An intensity of the light is adjusted based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.

Abstract: The present disclosure provides a semiconductor structure, a method of reading data from the semiconductor structure, and a method of writing data into the semiconductor structure. The semiconductor structure includes: a memory matrix, including a plurality of magnetic storage domains arranged in a staggered manner and including a first end, a second end, and an intermediate portion; and a reading and writing circuit, connected to the intermediate portion of the memory matrix and configured to write data into the magnetic storage domains and read data from the magnetic storage domains.

Abstract: Disclosed herein is a triple-stranded nucleic acid comprising a double-stranded nucleic acid and a triplex forming oligonucleotide (TFO), in which the double-stranded nucleic acid comprises a first strand and a second strand complementary to the first strand, and the TFO binds to the first strand. According to some embodiments of the present disclosure, the second strand comprises a plurality of modified nucleotides independently selected from the group consisting of 5-fluoro-uridine, 5-chloro-uridine, 5-bromo-uridine and 5-formyl-uridine nucleotides. Also disclosed herein are kits and methods of detecting a target sequence in a double-stranded nucleic acid.

Abstract: Embodiments of the present application provide a magnetic resonance scanning and imaging method, and a magnetic resonance imaging system. The method includes: determining a pulse to be adjusted in a scan sequence, the pulse to be adjusted including a first radio-frequency pulse and a first gradient pulse applied along with the first radio-frequency pulse; determining an adjustment factor based on the first gradient pulse and a minimum repetition time related to a specific absorption rate of radio-frequency energy; adjusting the scan sequence based on the adjustment factor; and, using the adjusted scan sequence, performing a diagnostic scan on a site to be examined, to obtain a magnetic resonance image.

Abstract: A semiconductor device includes a sensing element including a sensing electrode and a filter covering the sensing electrode. The filter includes a first work function layer and a second work function layer. The first work function layer is over the sensing electrode. The second work function layer is over the first work function layer. A work function value of the second work function layer is greater than a work function value of the first work function layer, and an atomic percentage of metal in the second work function layer is greater than an atomic percentage of metal in the first work function layer.

Abstract: This specification relates to portable conveyances, and in particular to a dual-function apparatus that functions as a rack in a first attachment position on the portable conveyance when the portable conveyance is in an unfolded position, and that functions as a stand in a second attachment position on the portable conveyance when the portable conveyance is in a folded position.

Abstract: A device in a chamber is provided. The device comprises at least one die. The at least one die comprise a first voltage generator, a dielectric layer and a first voltage regulator circuit. The first voltage generator is charged to have a first induced voltage by induced charges generated in response to a first voltage of a first electrode of a chuck in the chamber. The dielectric layer surrounds the first voltage generator to isolate the first voltage generator from the first electrode. The first voltage regulator circuit is coupled to the first voltage generator to receive the first induced voltage and generates a first power supply voltage according to the first induced voltage for a first circuit in the device.

Abstract: A semiconductor structure and the fabrication method thereof are provided. The semiconductor structure includes: a substrate including a first doped region and a second doped region; a first selection transistor and a second selection transistor located in the substrate; a conductive layer located between the first doped region and the second doped region; a resistive dielectric layer located on sidewalls of the conductive layer, where the conductive layer, the first doped region, and a portion of the resistive dielectric layer facing the first doped region constitute a first variable resistor, and the conductive layer, the second doped region, and a portion of the resistive dielectric layer facing the second doped region constitute a second variable resistor; and an isolation dielectric layer located between the conductive layer and the substrate. The semiconductor structure improves the storage density of resistive random access memory (RRAM).

Abstract: A magnetic resonance scanning and imaging method, and a magnetic resonance imaging system is presented. The method includes: according to a first correspondence between a blood flow rate and a spatial saturation band parameter, determining a first spatial saturation band parameter corresponding to a blood flow rate of a site to be examined; and by using a scan sequence related to the first spatial saturation band parameter, scanning the site to be examined, to acquire a magnetic resonance image of the site to be examined.