Patents by Inventor WEI-CHANG HUANG

WEI-CHANG HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11982866
    Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.
    Type: Grant
    Filed: December 15, 2022
    Date of Patent: May 14, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Liang-Ting Ho, Chen-Er Hsu, Yi-Liang Chan, Fu-Lai Tseng, Fu-Yuan Wu, Chen-Chi Kuo, Ying-Jen Wang, Wei-Han Hsia, Yi-Hsin Tseng, Wen-Chang Lin, Chun-Chia Liao, Shou-Jen Liu, Chao-Chun Chang, Yi-Chieh Lin, Shang-Yu Hsu, Yu-Huai Liao, Shih-Wei Hung, Sin-Hong Lin, Kun-Shih Lin, Yu-Cheng Lin, Wen-Yen Huang, Wei-Jhe Shen, Chih-Shiang Wu, Sin-Jhong Song, Che-Hsiang Chiu, Sheng-Chang Lin
  • Publication number: 20240154021
    Abstract: A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine.
    Type: Application
    Filed: December 29, 2022
    Publication date: May 9, 2024
    Inventors: TING-CHANG CHANG, Wei-Chen Huang, Shih-Kai Lin, Yong-Ci Zhang, Sheng-Yao Chou, Chung-Wei Wu, Po-Hsun Chen
  • Patent number: 11978715
    Abstract: A package structure and a formation method of a package structure are provided. The method includes disposing a chip structure over a substrate and forming a first adhesive element directly on the chip structure. The first adhesive element has a first thermal conductivity. The method also includes forming a second adhesive element directly on the chip structure. The second adhesive element has a second thermal conductivity, and the second thermal conductivity is greater than the first thermal conductivity. The method further includes attaching a protective lid to the chip structure through the first adhesive element and the second adhesive element.
    Type: Grant
    Filed: May 19, 2021
    Date of Patent: May 7, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Meng-Tsung Kuo, Hui-Chang Yu, Chih-Kung Huang, Wei-Teng Chang
  • Publication number: 20240112707
    Abstract: A dynamic random access memory applied to an embedded display port includes a memory core unit, a peripheral circuit unit, and an input/output unit. The memory core unit is used for operating in a first predetermined voltage. The peripheral circuit unit is electrically connected to the memory core unit for operating in a second predetermined voltage, where the second predetermined voltage is lower than 1.1V. The input/output unit is electrically connected to the memory core unit and the peripheral circuit unit for operating in a third predetermined voltage, where the third predetermined voltage is lower than 1.1V.
    Type: Application
    Filed: December 15, 2023
    Publication date: April 4, 2024
    Applicant: Etron Technology, Inc
    Inventors: Der-Min Yuan, Yen-An Chang, Wei-Ming Huang
  • Patent number: 11935981
    Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: March 19, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Chu-Jih Su, Chia-Hsiang Chou, Wei-Chih Peng, Wen-Luh Liao, Chao-Shun Huang, Hsuan-Le Lin, Shih-Chang Lee, Mei Chun Liu, Chen Ou
  • Publication number: 20240079524
    Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.
    Type: Application
    Filed: September 6, 2023
    Publication date: March 7, 2024
    Inventors: Wei-Jen HSUEH, Shih-Chang LEE, Kuo-Feng HUANG, Wen-Luh LIAO, Jiong-Chaso SU, Yi-Chieh LIN, Hsuan-Le LIN
  • Publication number: 20230201994
    Abstract: A polishing head assembly for polishing of semiconductor wafers includes a polishing head and a cap. The polishing head has a recess along a bottom portion. The recess has a recessed surface. The cap is positioned within the recess. The cap includes an annular wall secured to the polishing head and a floor joined to the annular wall at a joint. The floor extends across the annular wall, and the floor has an upper surface and a lower surface. The upper surface is spaced from the recessed surface to form a chamber therebetween. A deformation resistance of a portion of the floor proximate the joint is weakened to allow the portion of the floor proximate the joint to deflect relative to the polishing head by a change of pressure in the chamber.
    Type: Application
    Filed: December 14, 2022
    Publication date: June 29, 2023
    Inventors: Chih Yuan Hsu, Jen Chieh Lin, Chieh Hu, Wei Chang Huang, Yau-Ching Yang
  • Publication number: 20220410340
    Abstract: A polishing head assembly for polishing of semiconductor wafers includes a polishing head and a cap. The polishing head has a top portion and a recess along a bottom portion. The recess has a recessed surface. Holes extend from the top portion through the recessed surface. The cap is positioned within the recess and the cap has an annular wall and a floor extending across the annular wall. The annular wall has apertures corresponding to the holes. The floor is spaced from the recessed surface to form a chamber therebetween. The polishing head assembly also includes a band that circumscribes a portion of the annular wall. The holes and the corresponding apertures receive fasteners to removably secure the annular wall to the recessed surface.
    Type: Application
    Filed: June 10, 2022
    Publication date: December 29, 2022
    Inventors: Peter Daniel Albrecht, Chih Yuan Hsu, Jen Chieh Lin, Wei Chang Huang, Yau-Ching Yang
  • Patent number: 8710294
    Abstract: This invention provides a biological selective breeding technique in preparation of a transparent zebrafish, Citrine. The appearance of Citrine is transparent and yellowish, with uniformly pigmented black eyes and its inner organs are observable by eyes. The invention also provides a method for in vivo observation of progression and expansion of various disease stages or physiological processes.
    Type: Grant
    Filed: February 14, 2011
    Date of Patent: April 29, 2014
    Assignee: National Tsing Hua University
    Inventors: Wei-Chang Huang, Yung-Jen Chuang
  • Publication number: 20120210449
    Abstract: This invention provides a biological selective breeding technique in preparation of a transparent zebrafish, Citrine. The appearance of Citrine is transparent and yellowish, with uniformly pigmented black eyes and its inner organs are observable by eyes. The invention also provides a method for in vivo observation of progression and expansion of various disease stages or physiological processes.
    Type: Application
    Filed: February 14, 2011
    Publication date: August 16, 2012
    Applicant: NATIONAL TSING HUA UNIVERSITY
    Inventors: WEI-CHANG HUANG, YUNG-JEN CHUANG