Abstract: Various fuse structures are disclosed herein that exhibit improved performance, such as reduced electro-migration. An exemplary fuse structure includes an anode, a cathode, and a fuse link extending between the anode and the cathode. A plurality of anode contacts are coupled to the anode, and a plurality of cathode contacts are coupled to the cathode. The plurality of cathode contacts are arranged symmetrically with respect to a centerline of the fuse link.

Abstract: An exemplary method includes forming a fuse structure and forming a first cathode connector and a second cathode connector over the fuse structure. The fuse structure includes an anode, a cathode, and a fuse link extending between and connecting the anode and the cathode. The fuse link has a width defined between a first edge and a second edge, which extend a length of the fuse link. The cathode includes a central region defined by a first longitudinal axis and a second longitudinal axis extending respectively from the first edge and the second edge. The first cathode connector and the second cathode connector are equidistant respectively to the fuse link, the first cathode connector does not intersect the first longitudinal axis, and the second cathode connector does not intersect the second longitudinal axis, such that the central region is free of the first cathode connector and the second cathode connector.

Abstract: Various fuse structures are disclosed herein that exhibit improved performance, such as reduced electro-migration. An exemplary fuse structure includes an anode, a cathode, and a fuse link extending between the anode and the cathode. A plurality of anode contacts are coupled to the anode, and a plurality of cathode contacts are coupled to the cathode. The plurality of cathode contacts are arranged symmetrically with respect to a centerline of the fuse link.

Abstract: A method of generating a layout usable for fabricating an integrated circuit is disclosed. The method includes generating a block layout layer usable in conjunction with a first conductive layout layer. The first conductive layout layer includes a fuse layout pattern, and the block layout layer includes a block layout pattern overlapping a portion of a fuse line portion of the fuse layout pattern. A second conductive layout layer is generated to replace the first conductive layout layer. The generating the second conductive layout layer includes performing an optical proximity correction (OPC) process on the first conductive layout layer except the portion of the fuse line portion of the fuse layout pattern corresponding to the block layout pattern.

Abstract: A method of generating a layout usable for fabricating an integrated circuit is disclosed. The method includes generating a block layout layer usable in conjunction with a first conductive layout layer. The first conductive layout layer includes a fuse layout pattern, and the block layout layer includes a block layout pattern overlapping a portion of a fuse line portion of the fuse layout pattern. A second conductive layout layer is generated to replace the first conductive layout layer. The generating the second conductive layout layer includes performing an optical proximity correction (OPC) process on the first conductive layout layer except the portion of the fuse line portion of the fuse layout pattern corresponding to the block layout pattern.

Abstract: An exemplary method includes forming a fuse structure and forming a first cathode connector and a second cathode connector over the fuse structure. The fuse structure includes an anode, a cathode, and a fuse link extending between and connecting the anode and the cathode. The fuse link has a width defined between a first edge and a second edge, which extend a length of the fuse link. The cathode includes a central region defined by a first longitudinal axis and a second longitudinal axis extending respectively from the first edge and the second edge. The first cathode connector and the second cathode connector are equidistant respectively to the fuse link, the first cathode connector does not intersect the first longitudinal axis, and the second cathode connector does not intersect the second longitudinal axis, such that the central region is free of the first cathode connector and the second cathode connector.

Abstract: A fuse device and method for fabricating the fuse device is disclosed. An exemplary fuse device includes a first contact and a second contact coupled with a metal-semiconductor alloy layer, wherein the metal-semiconductor alloy layer extends continuously between the first contact and the second contact. The metal-semiconductor alloy layer is disposed over an epitaxial layer that is disposed over a fin structure of a substrate.

Abstract: An embodiment is a fuse structure. In accordance with an embodiment, a fuse structure comprises an anode, a cathode, a fuse link interposed between the anode and the cathode, and cathode connectors coupled to the cathode. The cathode connectors are each equivalent to or larger than about two times a minimum feature size of a contact that couples to an active device.

Abstract: Various fuse structures are disclosed herein that exhibit improved performance, such as reduced electro-migration. An exemplary fuse structure includes an anode, a cathode, and a fuse link extending between the anode and the cathode. A plurality of anode contacts are coupled to the anode, and a plurality of cathode contacts are coupled to the cathode. The plurality of cathode contacts are arranged symmetrically with respect to a centerline of the fuse link.

Abstract: A fuse device having contacts configured to reduce electro-migration is disclosed. In some exemplary embodiments, the fuse structure includes an anode disposed at a first end and a cathode disposed at a second end. A fuse link extends between and contacts the anode and the cathode. A boundary between the fuse link and the cathode has a center point, and each connector of a plurality of cathode connectors has a center point that is an equal distance from the center point of the boundary between the fuse link and the cathode. In some such embodiments, each connector of the plurality of cathode connectors is a different size than an anode connector, whereas in some such embodiments, each connector of the plurality of cathode connectors is substantially a same size as the anode connector along at least one axis.

Abstract: A fuse device and method for fabricating the fuse device is disclosed. An exemplary fuse device includes a first contact and a second contact coupled with a metal-semiconductor alloy layer, wherein the metal-semiconductor alloy layer extends continuously between the first contact and the second contact. The metal-semiconductor alloy layer is disposed over an epitaxial layer that is disposed over a fin structure of a substrate.

Abstract: A fuse device and method for fabricating the fuse device is disclosed. An exemplary fuse device includes a first contact and a second contact coupled with a metal-semiconductor alloy layer, wherein the metal-semiconductor alloy layer extends continuously between the first contact and the second contact. The metal-semiconductor alloy layer is disposed over an epitaxial layer that is disposed over a fin structure of a substrate.

Abstract: A fuse device having contacts configured to reduce electro-migration is disclosed. In some exemplary embodiments, the fuse structure includes an anode disposed at a first end and a cathode disposed at a second end. A fuse link extends between and contacts the anode and the cathode. A boundary between the fuse link and the cathode has a center point, and each connector of a plurality of cathode connectors has a center point that is an equal distance from the center point of the boundary between the fuse link and the cathode. In some such embodiments, each connector of the plurality of cathode connectors is a different size than an anode connector, whereas in some such embodiments, each connector of the plurality of cathode connectors is substantially a same size as the anode connector along at least one axis.

Abstract: An embodiment is a fuse structure. In accordance with an embodiment, a fuse structure comprises an anode, a cathode, a fuse link interposed between the anode and the cathode, and cathode connectors coupled to the cathode. The cathode connectors are each equivalent to or larger than about two times a minimum feature size of a contact that couples to an active device.

Abstract: A fuse device and method for fabricating the fuse device is disclosed. An exemplary fuse device includes a first contact and a second contact coupled with a metal-semiconductor alloy layer, wherein the metal-semiconductor alloy layer extends continuously between the first contact and the second contact. The metal-semiconductor alloy layer is disposed over an epitaxial layer that is disposed over a fin structure of a substrate.