Abstract: A semiconductor device includes a substrate, an interconnect, a memory cell, and a plurality of first barrier structures. The interconnect is disposed over the substrate. The memory cell is disposed in the interconnect within a memory region of the substrate, where the memory cell includes a transistor and a capacitor. The transistor includes a gate, source/drain elements respectively standing at two opposite sides of the gate, and a channel disposed between the source/drain elements and overlapped with the gate. The capacitor is disposed over the transistor and electrically coupled to one of the source/drain elements. The plurality of first barrier structures line sidewalls and bottom surfaces of the source/drain elements, and each include a first barrier layer and a second barrier layer disposed between the source/drain elements and the first barrier layer, where a first absorption interface is disposed between the first barrier layer and the second barrier layer.

Abstract: A capacitor includes a bottom capacitor plate including a rough upper surface with a root mean square (RMS) surface roughness of at least 1.14, a capacitor dielectric layer on the bottom capacitor plate and contacting the rough upper surface of the bottom capacitor plate, and an upper capacitor plate on the capacitor dielectric layer. A semiconductor device includes a transistor located on a substrate, a dielectric layer on the transistor, and a capacitor in the dielectric layer and including a bottom capacitor plate connected to a source region of the transistor and having a rough upper surface with a root mean square (RMS) surface roughness of at least 1.14.

Abstract: A memory device is provided which includes a first memory cell including a first transistor and a second transistor coupled to the first transistor in parallel. Gates of the first transistor and the second transistor are coupled to each other, and the gates of the first transistor and the second transistor pass different layers and overlap with each other. Types of the first transistor and the second transistor are the same.

Abstract: In an automated detection system for acute ischemic stroke, a preprocessor performs registration on a whole-brain image and a standard-brain spatial template to extract individual brain region masks from the whole-brain image. A deep learning encoder performs feature extraction on the whole-brain image and the individual brain region masks, thereby converting the whole-brain image into 2D whole-brain slice images. A first processor maps the individual brain masks onto the whole-brain slice images for registration, thereby generating sets of brain region slice images. A second processor computes the stroke-related weight values of the slice images of each of the sets of brain region slice images and sums the weight values to obtain the characteristic value of each brain region. A disparity-aware classifier determines whether any brain region has acute ischemic stroke according to the characteristic value of each brain region.

Abstract: An equipment sensing circuit board and an operation method thereof are provided. The equipment sensing circuit board equipped on a semiconductor equipment includes a main sensor, a backup sensor, a first electronic fuse, a second electronic fuse, and a multiplexer. The main sensor and the backup sensor are used to monitor the operation of the semiconductor equipment to output a main sensing signal and a backup sensing signal respectively. The first electronic fuse is disposed on the main sensor to output a first status signal. The second electronic fuse is disposed on the backup sensor to output a second status signal. The multiplexer is connected to the main sensor, the backup sensor, the first electronic fuse and the second electronic fuse. The multiplexer selects to output the main sensing signal or the backup sensing signal according to the combination of the first state signal and the second state signal.

Abstract: A system and method of throat abnormal object recognition is disclosed. The system includes a throat abnormal object recognition device, a data source device, a display device, and an operation device connected to the throat abnormal object recognition device, the data source device, and the display device. The method includes the throat abnormal object recognition device generating operation parameters, the data source device generating an original X-ray image data, the throat abnormal object recognition device reading the original X-ray image data, performing a pre-stage process on the original X-ray image data to generate a pre-stage processed image data, performing a comparison process on the pre-stage processed image data to generate a comparison processed image data with an abnormal object image, employing a frame mark to mark the abnormal object image as a mark X-ray image, and employing the display device to display the mark X-ray image.

Abstract: Provided is a bipolar electrode probe, which includes a conductive needle, an insulation layer, a conductive sleeve, and an insulation sleeve. The conductive needle has a longitudinal direction and a transverse direction perpendicular to the longitudinal direction. The insulation layer covers the conductive needle and has a first opening. The conductive sleeve covers the insulation layer and has a second opening. The insulation sleeve covers the conductive sleeve. When the bipolar electrode probe is turned on, a longitudinal electric field is formed from a front end of the conductive needle to the conductive sleeve along the longitudinal direction. A transverse electric field is formed from the conductive needle to the conductive sleeve via the first opening and the second opening along the transverse direction.

Abstract: Provided is a bipolar electrode probe, which includes a conductive needle, an insulation layer, a conductive sleeve, and an insulation sleeve. The conductive needle has a longitudinal direction and a transverse direction perpendicular to the longitudinal direction. The insulation layer covers the conductive needle and has a first opening. The conductive sleeve covers the insulation layer and has a second opening. The insulation sleeve covers the conductive sleeve. When the bipolar electrode probe is turned on, a longitudinal electric field is formed from a front end of the conductive needle to the conductive sleeve along the longitudinal direction. A transverse electric field is formed from the conductive needle to the conductive sleeve via the first opening and the second opening along the transverse direction.

Abstract: A method for fabricating a printed circuit board having semiconductor components embedded therein is provided. A carrier board having at least a predetermined hole area is provided. A plurality of through holes are formed in the surround of the predetermined hole area on the carrier board. A rectangular cavity is formed by punching to remove the predetermined hole area, and a plurality of through holes are formed around the rectangular cavity The through holes facilitate receipt of the semiconductor chip and filling of a fixing material in the rectangular cavity, to avoid displacement of the semiconductor chip in subsequent fabricating steps that would otherwise cause a drawback, that is, a wiring to be formed later is improperly electrically connected to the semiconductor chip.

Abstract: This invention provides a method for supplying electric power by a PCMCIA socket connecting to a PCMCIA controller, the method comprising: determining whether the PCMCIA socket electronically connects to a specific device; determining whether the specific device comprises a PCMCIA interface IC; and if the specific device does not comprise the PCMCIA interface IC therein, then switching on the PCMCIA socket for electric power through the PCMCIA controller to supply electric power to the specific device by the PCMCIA socket.