Abstract: A semiconductor device includes a semiconductor stack; a substrate formed on the semiconductor stack, including a lower surface connected to the semiconductor stack, an upper surface opposite to the lower surface, and a side surface between the lower surface and the upper surface, wherein the side surface includes a mirror area, a first scribing area, and a first crack area, the mirror area is closer to the lower surface than the first scribing area to the lower surface, and the first scribing area is located between the mirror area and the first crack area; an optical structure on the upper surface of the substrate; and a reflective structure on a side surface of the first scribing area and the first crack area, wherein the first scribing area is arranged below the upper surface of the substrate with a distance less than or equal to ¼ of a thickness of the substrate.

Abstract: A light-emitting device includes a substrate comprising an upper surface, a plurality of side surfaces, and a semiconductor stack located on the upper surface. The substrate includes a hexagonal crystal structure. The plurality of side surfaces includes a first side surface. The first side surface is tilted away from a m-plane of the hexagonal crystal structure, and an acute angle is formed between the first side surface and the m-plane. The first side surface includes a first modified stripe, and the first modified stripe includes a plurality of first modified regions. A pitch is between the adjacent first modified regions, and the pitch is not less than 5 ?m. The first side surface comprises a folded structure.

Abstract: The present disclosure provides a light-emitting package. The light-emitting package includes a main body, a cavity disposed in the cavity, a base plane in the cavity and a light-emitting element. The light-emitting element is disposed in the cavity and connected to the base plane. The light-emitting element includes a substrate and a semiconductor stack on the substrate. The substrate includes a side wall, and the side wall incudes a first cutting trace. The main body includes a step portion disposed in the cavity and it surrounds the light-emitting element. The step portion comprises a first height relative to base plane, and the first cutting trace comprises a second height relative to the base plane. The second height is greater than the first height.

Abstract: A light emitting chip and associated package structure are provided. The light emitting chip includes a substrate, a first type layer, an active layer, a second type layer, a first type electrode and a second type electrode. A second portion of the first type layer is located over the substrate. A first portion of the first type layer is located over the second portion of the first type layer. The active layer is located over the first portion of the first type layer. The second type layer is located over the active layer. The first type electrode is contacted with a top surface and a sidewall of the second portion of the first type layer and contacted with a portion of a sidewall of the substrate. The second type electrode is contacted with the second type layer.

Abstract: A light emitting chip and associated package structure are provided. The light emitting chip includes a substrate, a first type layer, an active layer, a second type layer, a first type electrode and a second type electrode. A second portion of the first type layer is located over the substrate. A first portion of the first type layer is located over the second portion of the first type layer. The active layer is located over the first portion of the first type layer. The second type layer is located over the active layer. The first type electrode is contacted with a sidewall of the second portion of the first type layer and contacted with a sidewall of the substrate. The second type electrode is contacted with the second type layer.

Abstract: A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.

Abstract: A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.

Abstract: A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region.

Abstract: A light emitting diode chip includes a permanent substrate having a holding space formed on the permanent substrate; an insulating layer and a metal layer sequentially formed on the permanent substrate and the holding spacer; a die having a eutectic layer and a light-emitting region and bonded to the metal layer within the holding space via the eutectic layer coupling to the metal layer; a filler structure filled between the holding space and the die; and an electrode formed on the die and in contact with the light-emitting region.

Abstract: A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer further comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer but not contacted to the second area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.