Abstract: A p-GaN high-electron-mobility transistor (HEMT) includes a buffer layer stacked on a substrate, a channel layer stacked on the buffer layer, a supply layer stacked on the channel layer, a doped layer stacked on the supply layer, and a hydrogen barrier layer covering the supply layer and the doped layer. A source and a drain are electrically connected to the channel layer and the supply layer, respectively. A gate is located on the doped layer. The hydrogen barrier layer is doped with fluorine.

Abstract: An antioxidant conductive thermal paste and a method of manufacturing the same are provided. The antioxidant conductive thermal paste includes a reactive monomer, a thermosetting resin, a polymerization inhibitor, an electrically conductive filler, and a thixotropic agent. The method consists of the steps of mixing a reactive monomer, a thermosetting resin, and a polymerization inhibitor evenly to get a first polymer mixture, and adding an electrically conductive filler and a thixotropic agent into the first polymer mixture in turn and blending the mixture evenly to obtain an antioxidant conductive thermal paste with good adherence, high electrical conductivity, high thermal conductivity, improved thermal-mechanical fatigue resistance or mechanical fatigue resistance.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure, the method includes forming a buffer layer over a substrate. An active layer is formed on the buffer layer. A top electrode is formed on the active layer. An etch process is performed on the buffer layer and the substrate to define a plurality of pillar structures. The plurality of pillar structures include a first pillar structure laterally offset from a second pillar structure. At least portions of the first and second pillar structures are spaced laterally between sidewalls of the top electrode.

Abstract: A memory device, includes a memory array for storing a plurality of vector data each of which has an MSB vector and a LSB vector. The memory array includes a plurality of memory units each of which has a first bit and a second bit. The first bit is used to store the MSB vector of each vector data, the second bit is used to store the LSB vector of each vector data. A bit line corresponding to each vector data executes one time of bit-line-setup, and reads the MSB vector and the LSB vector of each vector data according to the bit line. The threshold voltage distribution of each memory unit is divided into N states, where N is a positive integer and N is less than 2 to the power of 2, and the effective bit number stored by each memory unit is less than 2.

Abstract: An antioxidant conductive thermal paste and a method of manufacturing the same are provided. The antioxidant conductive thermal paste includes a reactive monomer, a thermosetting resin, a polymerization inhibitor, an electrically conductive filler, and a thixotropic agent. The method consists of the steps of mixing a reactive monomer, a thermosetting resin, and a polymerization inhibitor evenly to get a first polymer mixture, and adding an electrically conductive filler and a thixotropic agent into the first polymer mixture in turn and blending the mixture evenly to obtain an antioxidant conductive thermal paste with good adherence, high electrical conductivity, high thermal conductivity, improved thermal-mechanical fatigue resistance or mechanical fatigue resistance.

Abstract: A resistive memory cell includes a P-well region, an isolation structure, an N-well region, a first gate structure, a second gate structure, a first N-type doped region, a second N-type doped region, a third N-type doped region, a fourth N-type doped region, a word line, a bit line, a conductor line and a program line. The third N-type doped region, the fourth N-type doped region and the N-well region are collaboratively formed as an N-type merged region. The bit line is connected with the first N-type doped region. The word line is connected with a conductive layer of the first gate structure. The conductor line is connected with the second N-type doped region and a conductive layer of the second gate structure. The program line is connected with the N-type merged region.

Abstract: An automated pathogenic mutation classification method is provided, which includes producing a population score using a population database based on related information. A variant type score is produced using a variation pattern prediction tool based on the related information. A clinical score is produced using the related information or a clinical database based on the related information. A functional score is produced using a functional variant hazard prediction tool based on the related information. The population score, the variant type score, the clinical score, and the functional score are summed to obtain a pathogenic score. Probability that mutation sites suffer from a corresponding disease is determined based on the pathogenic score. When the pathogenic score is higher, the probability of the mutation sites suffering from the corresponding disease is higher.

Abstract: A resistive random-access memory cell includes a well region, a first doped region, a second doped region, a third doped region, a first gate structure, a second gate structure and a third gate structure. The first gate structure is formed over the surface of the well region between the first doped region and the second doped region. The second gate structure is formed over the second doped region. The third gate structure is formed over the surface of the well region between the second doped region and the third doped region. A first metal layer is connected with the first doped region and the third doped region. A second metal layer is connected with the conductive layer of the first gate structure and the conductive layer of the third gate structure.

Abstract: A slide rail assembly includes a first rail, a second rail, a blocking member, a positioning member, and an operating member, configured to operate one of the blocking member and the positioning member. The first rail includes a positioning feature; the second rail is movable relative to the first rail. The blocking member and the positioning member are movably mounted on the second rail, and are respectively at one of the first state and the second state. When the second rail is moved in an extending direction from a retracted position to an extending position relative to the first rail, the second rail is prevented from being moved in the extending direction or a retracting direction from the second extending position relatively to the first rail, through the positioning member and the blocking member respectively corresponding to two portions of the positioning feature of the first rail.

Abstract: A slide rail assembly and a slide rail kit are provided. The slide rail assembly includes a first rail, a second rail, a blocking member, and an operating member. The blocking member is movably mounted on the second rail. When the second rail is positioned at an extending position relative to the first rail, a blocking feature of the first rail blocks the blocking member at a first state, so as to prevent the second rail from being moved from the extending position in a retracting direction. The operating member is operated to be positioned at a position that moves the blocking member from the first state to a second state, such that the blocking feature is unable to block the blocking member at the second state. The operating member is engaged with the predetermined portion of the second rail to be retained at the position.

Abstract: A slide rail assembly includes a first rail, a second rail, and an auxiliary member. The first rail includes a passage, and the passage includes a passage opening. The second rail is inserts in the passage from the passage opening through being guided by the auxiliary member.

Abstract: A semiconductor package includes a substrate having a top surface and a bottom surface; a semiconductor die mounted on the top surface of the substrate; and a two-part lid mounted on a perimeter of the top surface of the substrate and housing the semiconductor die. The two-part lid comprises an annular lid base and a cover plate removably installed on the annular lid base.

Abstract: A forming control method for a resistive random-access memory cell array is provided. While a forming action of the resistive random-access memory cell array is performed, a verification action is performed to judge whether the forming action on the resistive random-access memory cells has been successfully done. By properly changing a forming voltage or a pulse width, the forming actions on all of the resistive random-access memory cells of the resistive random-access memory cell array can be successfully done.

Abstract: A slide rail assembly including a first rail, a second rail, a third rail, a first supporting device, and at least one supporting member is provided. The first rail includes a first end portion and a second end portion that are opposite to each other. The second rail is longitudinally movable relative to the first rail. The third rail is longitudinally movable relative to the second rail. The first supporting device exceeds the first end portion of the first rail for a predetermined longitudinal distance. The at least one supporting member is arranged on one of the second rail and the first supporting device.

Abstract: A cable management device includes a first arm and a first connection element. The first arm has a first end portion and a second end portion. The first connection element is pivotally connected to the second end portion of the first arm. One of the first arm and the first connection element is arranged with an engaging feature, and the other one of the first arm and the first connection element is arranged with a corresponding feature. The engaging feature has a connecting portion, a flexible portion, an engaging portion and a contacting portion. When the first arm pivots relative to the first connection element from a first position to a second position by a predetermined angle, the first arm is capable of being kept at the second position relative to the first connection element by cooperation between the engaging feature and the corresponding feature.

Abstract: A slide rail assembly includes a first rail, a second rail, a first bracket, a second bracket and a supporting feature. The first rail is configured to be mounted to a rack through the first bracket and the second bracket. The second rail is movable relative to the first rail and is configured to carry a carried object. The supporting feature is arranged on the first bracket. When the second rail is located at a predetermined position relative to the first rail, an end of the second rail is not extended beyond the supporting feature, and the supporting feature is configured to support a predetermined portion of the carried object.

Abstract: A slide rail assembly includes a rail member, a first bracket device, a second bracket device, and a bracket member. The first bracket device is arranged on the rail member. The second bracket device is detachably mounted on one of the rail member and the first bracket device and is adjustable to displace with respect to the rail member. The bracket member can be detachably mounted on the one of the rail member and the first bracket device after the second bracket device is detached from the one of the rail member and the first bracket device.

Abstract: A slide rail assembly includes a bracket device, a driving device and a rail member. The bracket device includes a supporting frame, a bracket and a fastening member. The bracket is arranged on the supporting frame. The driving device and the bracket device are movable relative to each other. The rail member and the bracket device are movable relative to each other. When the rail member is moved relative to the bracket device from a first predetermined position along a direction, the rail member is able to drive the driving device to move from a first position to a second position, in order to drive the fastening member to switch from a first state to a second state.

Abstract: A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.

Abstract: A slide rail assembly includes a first rail, a second rail, a blocking member, a positioning member, and an operating member, configured to operate one of the blocking member and the positioning member. The first rail includes a positioning feature; the second rail is movable relative to the first rail. The blocking member and the positioning member are movably mounted on the second rail, and are respectively at one of the first state and the second state. When the second rail is moved in an extending direction from a retracted position to an extending position relative to the first rail, the second rail is prevented from being moved in the extending direction or a retracting direction from the second extending position relatively to the first rail, through the positioning member and the blocking member respectively corresponding to two portions of the positioning feature of the first rail.