Abstract: The present invention relates to a thermistor paste and a manufacturing method thereof. The thermistor paste includes specific contents of thermistor powder, a glass powder, and an organic carrier, in which the organic carrier includes an organic solvent, a binder, and an additive. A thermistor semi-finished product slurry of the present invention has been sintered. The thermistor paste of the present invention excludes a precious metal, such as ruthenium, gold, or platinum, etc., so the production cost can be reduced.

Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.

Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.

Abstract: An illumination system, configured to provide an illumination beam, is provided. The illumination system includes a first excitation light source, a wavelength conversion element, and a controller. The first excitation light source is configured to provide a first excitation beam. The wavelength conversion element is located on a transmission path of the first excitation beam. The wavelength conversion element includes multiple wavelength conversion regions and multiple non-wavelength conversion regions. The controller controls whether the first excitation light source emits light. During a first time interval, the controller turns off the first excitation light source. During a second time interval, the controller controls the first excitation light source to emit light. The first excitation beam is transmitted to one of the wavelength conversion regions to form a converted beam. The illumination beam includes the converted beam. Another illumination system and multiple projection devices are also provided.

Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.

Abstract: An illumination system, configured to provide an illumination beam, is provided. The illumination system includes a first excitation light source, a wavelength conversion element, and a controller. The first excitation light source is configured to provide a first excitation beam. The wavelength conversion element is located on a transmission path of the first excitation beam. The wavelength conversion element includes multiple wavelength conversion regions and multiple non-wavelength conversion regions. The controller controls whether the first excitation light source emits light. During a first time interval, the controller turns off the first excitation light source. During a second time interval, the controller controls the first excitation light source to emit light. The first excitation beam is transmitted to one of the wavelength conversion regions to form a converted beam. The illumination beam includes the converted beam. Another illumination system and multiple projection devices are also provided.

Abstract: A method for polishing a polishing pad includes detecting a presence of a defect formed on a groove of a polishing pad; removing the defect from the groove of the polishing pad; after removing the defect, measuring a remaining depth of the groove; and based on the measured remaining depth of the groove, applying a polishing condition on the groove.

Abstract: A method for polishing a polishing pad includes detecting a presence of a defect formed on a groove of a polishing pad; removing the defect from the groove of the polishing pad; after removing the defect, measuring a remaining depth of the groove; and based on the measured remaining depth of the groove, applying a polishing condition on the groove.

Abstract: A method for polishing a polishing pad includes detecting, by a first sensor, a presence of a defect formed on a groove of a polishing pad; removing, by a polishing disc, the defect from the groove of the polishing pad; after removing the defect, measuring, by a second sensor, a remaining depth of the groove; and based on the measured remaining depth of the groove, applying, through the polishing disc, a polishing condition on the groove.

Abstract: A method for polishing a polishing pad includes detecting, by a first sensor, a presence of a defect formed on a groove of a polishing pad; removing, by a polishing disc, the defect from the groove of the polishing pad; after removing the defect, measuring, by a second sensor, a remaining depth of the groove; and based on the measured remaining depth of the groove, applying, through the polishing disc, a polishing condition on the groove.