Abstract: The lighting device includes a rod and two or more lighting units superimposing each other. Each of the lighting units includes a housing and a lighting element. The housing has a through hole, a first conductive element, a second conductive element and a positioning mechanism. The through hole is penetrated by the rod so that the housing can turn about the rod. The positioning mechanism limits the lighting units to turn between a first position and a second position. The first conductive elements and second conductive elements of the lighting units make contact at the second position, respectively.

Abstract: The lighting device includes a rod and two or more lighting units superimposing each other. Each of the lighting units includes a housing and a lighting element. The housing has a through hole, a first conductive element, a second conductive element and a positioning mechanism. The through hole is penetrated by the rod so that the housing can turn about the rod. The positioning mechanism limits the lighting units to turn between a first position and a second position. The first conductive elements and second conductive elements of the lighting units make contact at the second position, respectively.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes providing a substrate. The method includes forming a portion of an interconnect structure over the substrate. The portion of the interconnect structure has an opening. The method includes obtaining a boron-containing gas that is free of a boron-10 isotope. The method includes filling the opening with a conductive material to form a contact. The filling of the opening is carried out using the boron-containing gas. Also provided is a semiconductor device. The semiconductor device includes a substrate. The semiconductor device includes an interconnect structure formed over the substrate. The semiconductor device includes a conductive contact formed in the interconnect structure. The conductive contact has a material composition that includes Tungsten and Boron, wherein the Boron is a 11B-enriched Boron.

Abstract: A glue-dripping needle structure includes a needle body. The needle body includes glue storage cylinder portion and a connection seat portion. The glue storage cylinder portion has an open end and a closed end. The outer surface of the closed end is provided with a plurality of needle heads and protrusions. When in use, the needle heads and the protrusions are perpendicular to a lens module to be processed. Through the plurality of needle heads disposed around the closed end of the glue storage cylinder portion, the glue drips on the periphery of the lens module evenly. There is no need to move the needle body for dripping glue many times. The present invention provides a stable glue-dripping, without worrying about deflection of glue, much glue or less glue.

Abstract: A portable standalone controller for optical disc label printers has at least one output port and a processing unit. The at least one output port is for connecting to at least one optical disc label printer. The processing unit connects to the at least one output, receives label content, transmits the received label content to the at least one connected optical disc label printer through the at least one output port and issues at least one printing command to the at least one connected optical disc label printer so the at least one connected optical disc label printer starts to label according to the label content. The controller connects to a computer or an external device only for acquiring the label content. The controller allows users to use the connected optical disc label printer without operating a corresponding computer.

Abstract: Integrated Circuits and methods for reducing thermal neutron soft error rate (SER) of a digital circuit are provided by doping a protection layer on top of the metal layer and in physical contact with the metal layer of the digital circuit, wherein the protection layer is doped with additional thermal neutron absorbing material. The thermal neutron absorbing material can be selected from the group consisting of Gd, Sm, Cd, B, and combinations thereof. The protection layer may comprise a plurality of sub-layers among which a plurality of them containing additional thermal neutron absorbing material.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes providing a substrate. The method includes forming a portion of an interconnect structure over the substrate. The portion of the interconnect structure has an opening. The method includes obtaining a boron-containing gas that is free of a boron-10 isotope. The method includes filling the opening with a conductive material to form a contact. The filling of the opening is carried out using the boron-containing gas. Also provided is a semiconductor device. The semiconductor device includes a substrate. The semiconductor device includes an interconnect structure formed over the substrate. The semiconductor device includes a conductive contact formed in the interconnect structure. The conductive contact has a material composition that includes Tungsten and Boron, wherein the Boron is a 11B-enriched Boron.

Abstract: A non-woven fabric filter used for wastewater treatment with activated sludge. The present invention, for the first time, uses non-woven fabric as a filtering material for wastewater treatment. The non-woven fabric filter for wastewater treatment includes a tubular non-woven fabric filtering portion, which has a mean pore size of 0.2 ?m to 150 ?m; a porous tubular supporting portion disposed on inner walls of the tubular non-woven fabric filtering portion to provide support; and a sealing portion for sealing two ends of the tubular non-woven fabric filtering portion and the tubular supporting portion, while leaving a hollow space in the tubular supporting portion.

Abstract: A semiconductor interconnect structure including a semiconductor substrate, a semiconductor active device formed in the substrate, a layer of low-k dielectric material, a first patterned conducting layer, a second patterned conducting layer, and a cap layer formed thereon. The low-k material layer is formed over the semiconductor device. The first conducting line is formed in the low-k material layer and connected to the semiconductor active device. The second conducting line is formed in the low-k material layer but not electrically connected to the semiconductor active device. The cap layer is formed over the low-k material layer, the first and second conducting lines. The cap layer includes silicon and carbon.

Abstract: A method for determining an electrostatic force present in a flat object, includes: (a) positioning the object on a flat support; (b) providing a series of testing membranes which are substantially free of electrostatic charges and have different standarized weights; (c) placing on the surface of the object one of the testing membranes and turning the support to an inclined position relative to a horizontal plane; (d) repeating step (c) with the other ones of the testing membranes; (e) examining which one of the testing membranes slides relative to the object after the support is inclined, and determining the smallest weight among the standarized weights, that permits a sliding movement between the testing membranes and the object, and the largest weight among the standarized weights, that prevents the sliding movement; and (f) evaluating the electrostatic force as a function of the largest weight and the smallest weight. An apparatus for carrying out the process is also disclosed.