Patents by Inventor Wei-Cheng Huang

Wei-Cheng Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240408171
    Abstract: An aqueous formulation includes a PEDF-derived short peptide (PDSP) having the sequence of one of SEQ ID NO: 1, 2, 3, 5, 6, 8 or 9; boric acid at a concentration of 0.01 mM-923 mM; and a non-ionic tonicity agent. The pH value is around 5.5-8.4. The non-ionic tonicity agent is glycerin, sucrose, mannitol, or sorbitol. A concentration of the PDSP is 0.01%-1% w/v.
    Type: Application
    Filed: January 24, 2022
    Publication date: December 12, 2024
    Applicant: BRIM Biotechnology, Inc.
    Inventors: Frank Wen-Chi Lee, Wayne Wei-Cheng Liaw, Jason Ping-Yen Huang, Emily Hsiao-Han Wang
  • Publication number: 20240413149
    Abstract: An integrated circuit is provided which includes a first complementary field-effect transistor and a second complementary field-effect transistor. The first complementary field-effect transistor includes at least two first transistors respectively located on a first layer and a second layer. The second complementary field-effect transistor is disposed adjacent to the first complementary field-effect transistor. The second complementary field-effect transistor includes at least two second transistors respectively located on the first layer and the second layer. Type of one of the at least two first transistors located on the first layer is different from type of one of the at least two second transistors located on the first layer.
    Type: Application
    Filed: June 7, 2023
    Publication date: December 12, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Yu HUANG, Wei-Cheng TZENG, Chun-Yen LIN, Shih-Wei PENG, Kuan Yu CHEN, Wei-Cheng LIN, Jiann-Tyng TZENG
  • Publication number: 20240400746
    Abstract: A polyurethane and a preparation method thereof are provided. The polyurethane is represented by Formula 1. The preparation method of the polyurethane includes performing an addition reaction between a polyester-polyether polyol represented by the Formula 4 and a di-isocyanate. The formed polyurethane has high elasticity and high moisture-permeable properties.
    Type: Application
    Filed: December 21, 2023
    Publication date: December 5, 2024
    Applicant: Industrial Technology Research Institute
    Inventors: Ying-Chen Liao, De-Lun Kuo, Hsu-Tzu Fan, Wei-Cheng Tang, Cheng-Jyun Huang, Shin-Liang Kuo
  • Publication number: 20240395874
    Abstract: Methods of forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device are disclosed herein. Methods include etching a contact opening through a dielectric layer to expose surfaces of a first source/drain contact and repairing silicon oxide structures along sidewall surfaces of the contact opening and along planar surfaces of the dielectric layer to prevent selective loss defects from occurring during a subsequent selective deposition of conductive fill materials and during subsequent etching of other contact openings. The methods further include performing a selective bottom-up deposition of conductive fill material to form a second source/drain contact. According to some of the methods, once the second source/drain contact has been formed, the contact plug may be formed over the gate stack.
    Type: Application
    Filed: July 29, 2024
    Publication date: November 28, 2024
    Inventors: Chun-Hsien Huang, Chang-Ting Chung, Wei-Cheng Lin, Wei-Jung Lin, Chih-Wei Chang
  • Publication number: 20240387257
    Abstract: A method includes forming a gate electrode on a semiconductor region, recessing the gate electrode to generate a recess, performing a first deposition process to form a first metallic layer on the gate electrode and in the recess, wherein the first deposition process is performed using a first precursor, and performing a second deposition process to form a second metallic layer on the first metallic layer using a second precursor different from the first precursor. The first metallic layer and the second metallic layer comprise a same metal. The method further incudes forming a dielectric hard mask over the second metallic layer, and forming a gate contact plug penetrating through the dielectric hard mask. The gate contact plug contacts a top surface of the second metallic layer.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 21, 2024
    Inventors: Chung-Chiang Wu, Po-Cheng Chen, Kuo-Chan Huang, Pin-Hsuan Yeh, Wei-Chin Lee, Hsien-Ming Lee, Chien-Hao Chen, Chi On Chui
  • Publication number: 20240371884
    Abstract: In some embodiments, the present disclosure relates to a device that includes a silicon-on-insulator (SOI) substrate. A first semiconductor device is disposed on a frontside of the SOI substrate. An interconnect structure is arranged over the frontside of the SOI substrate and coupled to the first semiconductor device. A shallow trench isolation (STI) structure is arranged within the frontside of the SOI substrate and surrounds the first semiconductor device. First and second deep trench isolation (DTI) structures extend from the STI structure to an insulator layer of the SOI substrate. Portions of the first and second DTI structures are spaced apart from one another by an active layer of the SOI substrate. A backside through substrate via (BTSV) extends completely through the SOI substrate from a backside to the frontside of the SOI substrate. The BTSV is arranged directly between the first and second DTI structures.
    Type: Application
    Filed: July 18, 2024
    Publication date: November 7, 2024
    Inventors: Harry-Hak-Lay Chuang, Wen-Tuo Huang, Hsin Fu Lin, Wei Cheng Wu
  • Publication number: 20240371681
    Abstract: A semiconductor feature includes: a semiconductor substrate; a dielectric structure and a semiconductor device disposed on the semiconductor substrate; an interconnecting structure disposed in the dielectric structure and connected to the semiconductor device; an STI structure disposed in the semiconductor substrate and surrounding the semiconductor device; two DTI structures penetrating the semiconductor substrate and the STI structure and surrounding the semiconductor device; a passivation structure connected to the semiconductor substrate and the DTI structures and located opposite to the interconnecting structure; and a conductive structure surrounded by the passivation structure, penetrating the semiconductor substrate and the STI structure into the dielectric structure, located between the DTI structures and electrically connected to the semiconductor device via the interconnecting structure.
    Type: Application
    Filed: July 19, 2024
    Publication date: November 7, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Harry-Hak-Lay CHUANG, Chung-Jen HUANG, Wen-Tuo HUANG, Wei-Cheng WU
  • Patent number: 12136627
    Abstract: In some embodiments, the present disclosure relates to a device that includes a silicon-on-insulator (SOI) substrate. A first semiconductor device is disposed on a frontside of the SOI substrate. An interconnect structure is arranged over the frontside of the SOI substrate and coupled to the first semiconductor device. A shallow trench isolation (STI) structure is arranged within the frontside of the SOI substrate and surrounds the first semiconductor device. First and second deep trench isolation (DTI) structures extend from the STI structure to an insulator layer of the SOI substrate. Portions of the first and second DTI structures are spaced apart from one another by an active layer of the SOI substrate. A backside through substrate via (BTSV) extends completely through the SOI substrate from a backside to the frontside of the SOI substrate. The BTSV is arranged directly between the first and second DTI structures.
    Type: Grant
    Filed: January 11, 2022
    Date of Patent: November 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Harry-Hak-Lay Chuang, Wen-Tuo Huang, Hsin Fu Lin, Wei Cheng Wu
  • Patent number: 12136673
    Abstract: A semiconductor device and method of manufacturing the semiconductor device are provided. An exemplary semiconductor device comprises a fin disposed over a substrate, wherein the fin includes a channel region and a source/drain region; a gate structure disposed over the substrate and over the channel region of the fin; a source/drain feature epitaxially grown in the source/drain region of the fin, wherein the source/drain feature includes a top epitaxial layer and a lower epitaxial layer formed below the top epitaxial layer, and the lower epitaxial layer includes a wavy top surface; and a contact having a wavy bottom surface matingly engaged with the wavy top surface of the lower epitaxial layer of the source/drain feature.
    Type: Grant
    Filed: August 10, 2023
    Date of Patent: November 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Ta Yu, Yen-Chieh Huang, Wei-Yuan Lu, Feng-Cheng Yang, Yen-Ming Chen
  • Publication number: 20240363676
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The magnetic element has multiple sub-layers, and each sub-layer is wider than another sub-layer above it. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element, and the isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.
    Type: Application
    Filed: July 9, 2024
    Publication date: October 31, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Cheng CHEN, Wei-Li HUANG, Chun-Yi WU, Kuang-Yi WU, Hon-Lin HUANG, Chih-Hung SU, Chin-Yu KU, Chen-Shien CHEN
  • Publication number: 20240363404
    Abstract: The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.
    Type: Application
    Filed: July 9, 2024
    Publication date: October 31, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Cheng CHEN, Tang-Kuei CHANG, Yee-Chia YEO, Huicheng CHANG, Wei-Wei LIANG, Ji CUI, Fu-Ming HUANG, Kei-Wei CHEN, Liang-Yin CHEN
  • Publication number: 20240355859
    Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first IC chip bonded to a second IC chip. The first IC chip includes a plurality of photodetectors disposed in a first substrate and a first bond structure. The first bond structure includes a first plurality of bond contacts disposed on a first plurality of conductive bond pads. The second IC chip includes a second bond structure and a second substrate. A first bond interface is disposed between the first bond structure and the second bond structure. The second bond structure comprises a second plurality of bond contacts. The first bond structure further includes a first plurality of shield structures disposed between adjacent conductive bond pads in the first plurality of conductive bond pads.
    Type: Application
    Filed: April 19, 2023
    Publication date: October 24, 2024
    Inventors: Hao-Lin Yang, Kuan-Chieh Huang, Wei-Cheng Hsu, Tzu-Jui Wang, Chen-Jong Wang, Dun-Nian Yaung
  • Publication number: 20240347576
    Abstract: Various embodiments of the present disclosure relate to an interstitial stacked-integrated-circuit interface shielding structure. A first integrated circuit (IC) chip includes a first dielectric layer. A second IC chip is bonded to the first IC chip at a bond interface and includes a second dielectric layer directly contacting the first dielectric layer at the bond interface. A first pair of conductive pads are respectively in the first and second dielectric layers and directly contacting at the bond interface. A second pair of conductive pads are respectively in the first and second dielectric layers and directly contacting at the bond interface. A pair of shield structures are respectively in the first and second dielectric layers and directly contact at the bond interface. Further, the pair of shield structures separate the first pair of conductive pads from the second pair of conductive pads.
    Type: Application
    Filed: April 17, 2023
    Publication date: October 17, 2024
    Inventors: Hao-Lin Yang, Kuan-Chieh Huang, Wei-Cheng Hsu, Tzu-Jui Wang, Chen-Jong Wang, Dun-Nian Yaung
  • Publication number: 20240339475
    Abstract: Some embodiments relate to an IC device, including a first chip; and a second chip bonded to the first chip at a bonding interface; where the first and second chips respectively comprise a first dielectric layer and a second dielectric layer directly contacting; the first chip further comprises a plurality of conductive pads recessed into the first dielectric layer and in a plurality of rows and columns; where the plurality of conductive pads are arranged with a zig-zag layout along the plurality of columns and along the plurality of rows and comprise a first conductive pad and a second conductive pad; the first chip further comprises a first shield line in the first dielectric layer and laterally between the first and second conductive pads, and the second chip further comprises a contact recessed into the second dielectric layer and directly contacting the first conductive pad at the bonding interface.
    Type: Application
    Filed: April 7, 2023
    Publication date: October 10, 2024
    Inventors: Hao-Lin Yang, Kuan-Chieh Huang, Wei-Cheng Hsu, Tzu-Jui Wang, Chen-Jong Wang, Dun-Nian Yaung
  • Publication number: 20240339467
    Abstract: Some embodiments relate to an IC device, including a first chip comprising a plurality of pixel blocks respectively including one of a first plurality of conductive pads, the plurality of pixel blocks arranged in rows extending in a first direction and columns extending in a second direction perpendicular to the first direction; a second chip bonded to the first chip at a bonding interface, where the second chip comprises a second plurality of conductive pad recessed and contacting the first plurality of conductive pads along the bonding interface; and a first corrugated shield line having outermost edges set-back along the second direction from outermost edges of a first row of the plurality of pixel blocks, the first corrugated shield line being arranged within a first dielectric layer and laterally separating neighboring ones of the first plurality of conductive pads within the first row of the plurality of pixel blocks.
    Type: Application
    Filed: April 7, 2023
    Publication date: October 10, 2024
    Inventors: Chi-Hsien Chung, Tzu-Jui Wang, Chia-Chi Hsiao, Kuan-Chieh Huang, Wei-Cheng Hsu, Hao-Lin Yang, Yi-Han Liao, Chen-Jong Wang, Dun-Nian Yaung
  • Publication number: 20240331764
    Abstract: A memory cell includes a first and second transmission pass-gate, a read word line and a write word line. The first transmission pass-gate includes a first and second pass-gate transistor. The second transmission pass-gate includes a third and fourth pass-gate transistor. The read word line is on a first metal layer above a front-side of a substrate. The write word line is on a second metal layer below a back-side of the substrate opposite from the front-side of the substrate. The first pass-gate transistor and the third pass-gate transistor are turned on in response to the write word line signal during a write operation. The second pass-gate transistor and the fourth pass-gate transistor are turned on in response to the read word line signal during the write operation after the first pass-gate transistor and the third pass-gate transistor are turned on.
    Type: Application
    Filed: October 31, 2023
    Publication date: October 3, 2024
    Inventors: Wei-Cheng WU, Chien-Chen LIN, Chien Hui HUANG, Yen Lin CHUNG, Wei Min CHAN
  • Publication number: 20240332333
    Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first IC chip bonded to a second IC chip. The first chip IC includes a first bond structure. The first bond structure includes a first plurality of conductive bond pads and a first plurality of shield structures disposed between adjacent conductive bond pads among the first plurality of conductive bond pads. The second IC chip includes a second bond structure. A bonding interface is disposed between the first bond structure and the second bond structure. The second bond structure includes a second plurality of conductive bond pads and a second plurality of shield structures. The first plurality of conductive bond pads contacts the second plurality of conductive bond pads and the first plurality of shield structures contacts the second plurality of shield structures at the bonding interface.
    Type: Application
    Filed: March 31, 2023
    Publication date: October 3, 2024
    Inventors: Hao-Lin Yang, Kuan-Chieh Huang, Wei-Cheng Hsu, Tzu-Jui Wang, Chen-Jong Wang, Dun-Nian Yaung
  • Publication number: 20240329361
    Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.
    Type: Application
    Filed: June 7, 2024
    Publication date: October 3, 2024
    Inventors: Sin-Hong LIN, Yung-Ping YANG, Wen-Yen HUANG, Yu-Cheng LIN, Kun-Shih LIN, Chao-Chang HU, Yung-Hsien YEH, Mao-Kuo HSU, Chih-Wei WENG, Ching-Chieh HUANG, Chih-Shiang WU, Chun-Chia LIAO, Chia-Yu CHANG, Hung-Ping CHEN, Wei-Zhong LUO, Wen-Chang LIN, Shou-Jen LIU, Shao-Chung CHANG, Chen-Hsin HUANG, Meng-Ting LIN, Yen-Cheng CHEN, I-Mei HUANG, Yun-Fei WANG, Wei-Jhe SHEN
  • Publication number: 20240333266
    Abstract: An integrated circuit includes a first inverter and a first transmission gate constructed with wide type-one transistors and wide type-two transistors. The integrated circuit also includes a first clocked inverter constructed with narrow type-one transistors and narrow type-two transistors. A latch is formed with the first inverter and the first clocked inverter. The first transmission gate is connected to between an output of the first inverter. The wide type-one transistors are formed in a wide type-one active-region structure and the narrow type-one transistors are formed in a narrow type-one active-region structure. The wide type-two transistors are formed in a wide type-two active-region structure and the narrow type-two transistors are formed in in a narrow type-two active-region structure.
    Type: Application
    Filed: May 29, 2024
    Publication date: October 3, 2024
    Inventors: Ching-Yu HUANG, Jiann-Tyng TZENG, Wei-Cheng LIN
  • Patent number: 12107001
    Abstract: A semiconductor feature includes: a semiconductor substrate; a dielectric structure and a semiconductor device disposed on the semiconductor substrate; an interconnecting structure disposed in the dielectric structure and connected to the semiconductor device; an STI structure disposed in the semiconductor substrate and surrounding the semiconductor device; two DTI structures penetrating the semiconductor substrate and the STI structure and surrounding the semiconductor device; a passivation structure connected to the semiconductor substrate and the DTI structures and located opposite to the interconnecting structure; and a conductive structure surrounded by the passivation structure, penetrating the semiconductor substrate and the STI structure into the dielectric structure, located between the DTI structures and electrically connected to the semiconductor device via the interconnecting structure.
    Type: Grant
    Filed: August 7, 2023
    Date of Patent: October 1, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Harry-Hak-Lay Chuang, Chung-Jen Huang, Wen-Tuo Huang, Wei-Cheng Wu