Abstract: A memory device is provided which includes a first memory cell including a first transistor and a second transistor coupled to the first transistor in parallel. Gates of the first transistor and the second transistor are coupled to each other, and the gates of the first transistor and the second transistor pass different layers and overlap with each other. Types of the first transistor and the second transistor are the same.

Abstract: A memory control circuit unit, a memory storage device, and a parameter updating method are disclosed. The memory control circuit unit includes a host interface, a memory interface, and a memory management circuit. The memory interface is configured to be coupled to a rewritable non-volatile memory module. The memory management circuit is configured to detect system status and activate an interface parameter updating operation in response to the system status meeting a target condition. The memory management circuit is further configured to update at least one interface parameter used by at least one of the memory interface and the rewritable non-volatile memory module during the interface parameter updating operation.

Abstract: A memory management method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending an erase command sequence configured to erase a first physical erasing unit in a rewritable non-volatile memory module; and sending a write command sequence configured to perform a dummy write operation on a second physical erasing unit in the rewritable non-volatile memory module with correspondence to the erasing of the first physical erasing unit. The dummy write operation is configured to store dummy data to the second physical erasing unit.

Abstract: A memory management method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending an erase command sequence configured to erase a first physical erasing unit in a rewritable non-volatile memory module; and sending a write command sequence configured to perform a dummy write operation on a second physical erasing unit in the rewritable non-volatile memory module with correspondence to the erasing of the first physical erasing unit. The dummy write operation is configured to store dummy data to the second physical erasing unit.

Abstract: A data writing method, a memory storage device, and a memory control circuit unit are provided. The method includes: receiving a write command from a host system, and the write command including first data; checking a status of a first physical programming unit in a first physical erasing unit; in response to the status of the first physical programming unit being a first status, sending a first command sequence to a rewritable non-volatile memory module, and the first command sequence being configured to instruct the rewritable non-volatile memory module to store at least part of the first data to the first physical programming unit.

Abstract: A display system and method of interacting with the display system are provided. The method of interacting with the display system comprises following steps: receiving an audio signal through an audio input device; converting the audio signal to corresponding text data through a voice-to-text converting module; generating a corresponding display image according to a document file; acquiring multiple identification data corresponding to the display image from the document file; comparing the text data with the identification data; and if the text data corresponds to one of the identification data, moving or displaying a marker on the display image through the display system according to a coordinate of one of the identification data.

Abstract: A data accessing method, a memory control circuit unit, and a memory storage device are provided. The data accessing method includes the following steps. A reading command is received from a host system, in which the reading command instructs to read a first logical address, the first logical address is mapped to a first physical programming unit, and the first physical programming unit corresponds to a first physical erasing unit. A first data is generated after receiving the reading command, and the first data is written to a second physical programming unit included in the first physical erasing unit. A second data stored in the first physical programming unit is read after the first data is written, so as to respond to the reading command.

Abstract: A display system and method of interacting with the display system are provided. The method of interacting with the display system comprises following steps: receiving an audio signal through an audio input device; converting the audio signal to corresponding text data through a voice-to-text converting module; generating a corresponding display image according to a document file; acquiring multiple identification data corresponding to the display image from the document file; comparing the text data with the identification data; and if the text data corresponds to one of the identification data, moving or displaying a marker on the display image through the display system according to a coordinate of one of the identification data.

Abstract: A data accessing method, a memory control circuit unit, and a memory storage device are provided. The data accessing method includes the following steps. A reading command is received from a host system, in which the reading command instructs to read a first logical address, the first logical address is mapped to a first physical programming unit, and the first physical programming unit corresponds to a first physical erasing unit. A first data is generated after receiving the reading command, and the first data is written to a second physical programming unit included in the first physical erasing unit. A second data stored in the first physical programming unit is read after the first data is written, so as to respond to the reading command.

Abstract: A data writing method for a rewritable non-volatile memory module is provided according to embodiments of the disclosure. The method includes: writing first-type data into a first physical unit at a first write speed; and writing second-type data into a second physical unit at a second write speed. The first-type data is different from the second-type data, and the first write speed is different from the second write speed.

Abstract: Disclosed herein is a method of providing slurry to a chemical mechanical planarization (CMP) station. The method includes the operations of: mixing slurry, water and a chemical to form dilute slurry; measuring a surface tension of the dilute slurry; supplying the dilute slurry to a CMP station through piping; and modulating a flow rate of the dilute slurry in the piping in accordance with the measured surface tension.

Abstract: Disclosed herein is a method of providing slurry to a chemical mechanical planarization (CMP) station. The method includes the operations of: mixing slurry, water and a chemical to form dilute slurry; measuring a surface tension of the dilute slurry; supplying the dilute slurry to a CMP station through piping; and modulating a flow rate of the dilute slurry in the piping in accordance with the measured surface tension.

Abstract: A slurry feed system includes a valve manifold, a mixing tank, a slurry feed pump, a surface tension meter and suction piping, discharge piping as well as slurry return piping. The valve manifold includes inlet piping, outlet piping fluidly coupled to the inlet piping, and a slurry discharge header for supplying slurry to CMP stations. The slurry feed pump is connected to the mixing tank by the suction piping. The discharge piping is routed from the slurry feed pump to the inlet piping of the valve manifold. The slurry return piping is routed from the outlet piping of the valve manifold to the mixing tank. The suction piping, the discharge piping, the inlet piping, the outlet piping and the slurry return piping define a first slurry supply loop. The surface tension meter is coupled to the first slurry supply loop.

Abstract: A slurry feed system includes a valve manifold, a mixing tank, a slurry feed pump, a surface tension meter and suction piping, discharge piping as well as slurry return piping. The valve manifold includes inlet piping, outlet piping fluidly coupled to the inlet piping, and a slurry discharge header for supplying slurry to CMP stations. The slurry feed pump is connected to the mixing tank by the suction piping. The discharge piping is routed from the slurry feed pump to the inlet piping of the valve manifold. The slurry return piping is routed from the outlet piping of the valve manifold to the mixing tank. The suction piping, the discharge piping, the inlet piping, the outlet piping and the slurry return piping define a first slurry supply loop. The surface tension meter is coupled to the first slurry supply loop.

Abstract: An adjustable brassiere is provided with a first adjustable buckle fastener in the middle of the interval between the two cups and second adjustable buckle fasteners in the middle of side-straps linking the two cups. Two ends of each adjustable buckle fastener are designed with two slits and a serrated cut adjacent to each inner slit. First adjustable straps extend from the two cups in the interval therebetween and are adjustable coupled to the first adjustable buckle fastener. Side-straps of the two cups include two sections from which second adjustable straps extend. The second adjustable straps are respectively adjustably coupled to the second adjustable buckle fasteners.