Abstract: A photomask is provided. The photomask is applied to a photolithography apparatus and includes a substrate with a mask pattern disposed thereon. The mask pattern includes at least one main pattern and a plurality of sub-resolution assistant features (SRAFs). The SRAFs are disposed around the at least one main pattern and separated from each other, wherein a distance between each of the SRAFs and the at least one main pattern is about 3 to 10 times a linewidth of the at least one main pattern. The photomask would result in an improved imaging quality on the wafer.

Abstract: A photomask is provided. The photomask is applied to a photolithography apparatus and includes a substrate with a mask pattern disposed thereon. The mask pattern includes at least one main pattern and a plurality of sub-resolution assistant features (SRAFs). The SRAFs are disposed around the main pattern and separated from each other, wherein a distance between each of the SRAFs and the main pattern is about 3 to 10 times a linewidth of the main pattern. The photomask would result in an improved imaging quality on the wafer.

Abstract: A lithography apparatus with an optical fiber module includes: a light source, a photo mask positioned under the light source, a lens positioned under the photo mask, a wafer stage positioned under the lens for supporting the wafer, wherein the wafer includes a dry film. The lithography apparatus further includes an optical fiber module having a front surface facing away from the lens, wherein a gap is between the front surface and the dry film and the gap is smaller than the wavelength of the light source. The DUV (deep ultraviolet) can pass through the optical fiber module. The present invention features a gap smaller than the wavelength of the light source, creating a near-field effect with improved resolution.

Abstract: A lithography apparatus includes: a light source comprising a first light beam and a second light beam, a photomask, a polarization controlling system positioned between the light source and the photomask, a wafer state for holding a wafer, and a lens positioned between the photomask and the wafer stage. The polarization controlling system diverts the first light beam into a first polarization direction and diverts the second light beam into a second polarization direction, wherein the first polarization direction and the second polarization direction are different from each other.

Abstract: A patterning method has a mask layer and undoped patterns sequentially formed on a target layer. A doping process is performed to surfaces of the undoped patterns to form doped patterns from the surfaces of the undoped patterns. A material is filled in the gaps between the doped patterns. A portion of the doped patterns are then removed to expose the top surfaces of the remaining undoped patterns. The material and the exposed undoped patterns are removed. A portion of the mask layer is removed using the remaining doped patterns as a mask to form a first pattern on the mask layer. A portion of the target layer is removed using the mask layer having the first pattern thereon as a mask so as to form on the target layer a second pattern complementary to the first pattern.

Abstract: Apparatuses for specially designed gradient immersion lithography are presented. The gradient immersion lithographic apparatus includes a radiation system providing a patterned beam of radiation, a substrate table with a substrate structure held thereon, a projection system with an optical lens element arranged to project the patterned beam of radiation onto the substrate structure, multiple layers of media of gases, liquids, or liquid crystals partitioned by moveable plates arranged in sequence between the projection system and the substrate structure, and a controller for displacement of the moveable plates to adjust relative thicknesses of the multiple layers of media.

Abstract: A lithography system includes a light source, a photo mask positioned downstream of the light source, an optical module having a front surface positioned downstream of the photo mask, and a wafer stage positioned downstream of the optical module for supporting a wafer, wherein the wafer comprises a dry film and a first medium positioned between the front surface of the optical module and a surface of the dry film. The optical module includes a container, a liquid medium situated in the container and a first set of lenses immersed in the liquid medium.

Abstract: A patterning method has a mask layer and undoped patterns sequentially formed on a target layer. A doping process is performed to surfaces of the undoped patterns to form doped patterns from the surfaces of the undoped patterns. A material is filled in the gaps between the doped patterns. A portion of the doped patterns are then removed to expose the top surfaces of the remaining undoped patterns. The material and the exposed undoped patterns are removed. A portion of the mask layer is removed using the remaining doped patterns as a mask to form a first pattern on the mask layer. A portion of the target layer is removed using the mask layer having the first pattern thereon as a mask so as to form on the target layer a second pattern complementary to the first pattern.

Abstract: A patterning method in a semiconductor manufacturing process includes the following steps. A base is provided. A target layer and a lining layer are sequentially formed on the surface of the base. The lining layer is patterned to form a plurality of rectangular blocks. A sidewall spacer material layer is formed on the rectangular blocks and the target layer. Part of the sidewall spacer material layer is removed to form a sidewall spacer on the side wall of each of the plurality of rectangular blocks. The plurality of rectangular blocks is removed, and the sidewall spacer is used as a hard sheltering mask to etch and remove part of the target layer. The overlay accuracy is improved and the dimension of the electronic elements can be reduced so that a lot of two-dimension structures can be manufactured on the wafer substrate.

Abstract: A lithography apparatus includes: a light source comprising a first light beam and a second light beam, a photomask, a polarization controlling system positioned between the light source and the photomask, a wafer state for holding a wafer, and a lens positioned between the photomask and the wafer stage. The polarization controlling system diverts the first light beam into a first polarization direction and diverts the second light beam into a second polarization direction, wherein the first polarization direction and the second polarization direction are different from each other.

Abstract: A lithography apparatus with an optical fiber module includes: a light source, a photo mask positioned under the light source, a lens positioned under the photo mask, a wafer stage positioned under the lens for supporting the wafer, wherein the wafer includes a dry film. The lithography apparatus further includes an optical fiber module having a front surface facing away from the lens, wherein a gap is between the front surface and the dry film and the gap is smaller than the wavelength of the light source. The DUV (deep ultraviolet) can pass through the optical fiber module. The present invention features a gap smaller than the wavelength of the light source, creating a near-field effect with improved resolution.

Abstract: A patterning method in a semiconductor manufacturing process includes the following steps. A base is provided. A target layer and a lining layer are sequentially formed on the surface of the base. The lining layer is patterned to form a plurality of rectangular blocks. A sidewall spacer material layer is formed on the rectangular blocks and the target layer. Part of the sidewall spacer material layer is removed to form a sidewall spacer on the side wall of each of the plurality of rectangular blocks. The plurality of rectangular blocks is removed, and the sidewall spacer is used as a hard sheltering mask to etch and remove part of the target layer. The overlay accuracy is improved and the dimension of the electronic elements can be reduced so that a lot of two-dimension structures can be manufactured on the wafer substrate.