Abstract: An integrated circuit includes a first inverter, a first transmission gate, and a second inverter constructed with wide type-one transistors and wide type-two transistors. The integrated circuit also includes a first clocked inverter and a second clocked inverter constructed with narrow type-one transistors and narrow type-two transistors. A master latch is formed with the first inverter and the first clocked inverter. A slave latch is formed with the second inverter and the second clocked inverter. The first transmission gate is coupled between the master latch and the slave latch. The wide type-one transistors are formed in a wide type-one active-region structure and the narrow type-one transistors are formed in a narrow type-one active-region structure. The wide type-two transistors are formed in a wide type-two active-region structure and the narrow type-two transistors are formed in in a narrow type-two active-region structure.

Abstract: An integrated circuit includes a plurality of first layer deep lines, a plurality of first layer shallow lines, a plurality of second layer deep lines, and a plurality of second layer shallow lines. The integrated circuit also includes a first active device and a second active device coupled between a conducting path that has a low resistivity portion and a low capacitivity portion. The first active device has an output coupled to a first layer deep line that is in the low resistivity portion. The second active device has an input coupled to a first layer shallow line that is in the low capacitivity portion. The low resistivity portion excludes the first layer shallow lines and the second layer shallow lines, and the low capacitivity portion excludes the first layer deep lines and the second layer deep lines.

Abstract: An integrated circuit includes a set of power rails on a back-side of a substrate, a first flip-flop, a second flip-flop and a third flip-flop. The set of power rails extend in a first direction. The first flip-flop includes a first set of conductive structures extending in the first direction. The second flip-flop abuts the first flip-flop at a first boundary, and includes a second set of conductive structures extending in the first direction. The third flip-flop abuts the second flip-flop at a second boundary, and includes a third set of conductive structures extending in the first direction. The first, second and third flip-flop are on a first metal layer and are on a front-side of the substrate opposite from the back-side. The second set of conductive structures are offset from the first boundary and the second boundary in a second direction.

Abstract: Apparatus and methods for generating a physical layout for a high density routing circuit are disclosed. An exemplary semiconductor structure includes: a gate structure; a plurality of first metal lines formed in a first dielectric layer below the gate structure; at least one first via formed in a second dielectric layer between the gate structure and the first dielectric layer; a plurality of second metal lines formed in a third dielectric layer over the gate structure; and at least one second via formed in a fourth dielectric layer between the gate structure and the third dielectric layer. Each of the at least one first via is electrically connected to the gate structure and a corresponding one of the plurality of first metal lines. Each of the at least one second via is electrically connected to the gate structure and a corresponding one of the plurality of second metal lines.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate, a first active region disposed on the substrate, a first gate structure disposed on the first active region, and a second gate structure disposed on the first active region and spaced apart from the first gate structure. The first active region includes a first portion and a second portion, the first portion of the first active region and the second portion of the first active region collectively specify a first stair profile. The first stair profile is located between the first gate structure and the second gate structure from a top view.

Abstract: A method is provided, including following operations: identifying a first contact via, a second contact via, or a combination thereof in a first standard cell, wherein the first contact via is coupled between a first active region and a first conductive line on a first side, and the second contact via is coupled between a second active region and a second conductive line on a second side; calculating a first cell height according to a first width of the first and second active regions, and calculating a second cell height according to a second width of the first and second active regions; calculating multiple first available cell heights based on a ratio between the first and second cell heights; generating layout designs of multiple first cells; and manufacturing at least first one element in the integrated circuit based on the layout designs of the first cells.

Abstract: A method is provided, including following operations: obtaining information on gate pitch and a ratio between the gate pitch and a first metal line pitch; comparing a preset metal line end spacing with a second metal line pitch, of multiple metal traces, and a spacing between a metal line layer and a power rail layer; in response to the comparison, defining multiple first metal line patterns overlapping multiple first gate patterns and defining multiple second metal line patterns disposed between two adjacent gate patterns in multiple second gate patterns; placing the first metal line patterns in a first row in a floorplan of an integrated circuit layout design and the second metal line patterns in a second row, adjacent the first row; and manufacturing at least one element in an integrated circuit based on the integrated circuit layout design.

Abstract: A semiconductor device includes a first transistor, a second transistor, a third transistor, and a contact. The first transistor includes a first source/drain (S/D), a second S/D, and a first gate between the first S/D and the second S/D. The first transistor and the second transistor are stacked over the third transistor. The contact covers the second S/D of the first transistor. The contact is electrically connected to the second transistor and electrically isolated from the second S/D.

Abstract: A device including first nanosheet structures each including a first number of nanosheets, second nanosheet structures each including a second number of nanosheets that is different than the first number of nanosheets, and a plurality of rows including first rows and second rows. Where each of the first nanosheet structures is in a respective one of the first rows, each of the second nanosheet structures is in a respective one of the second rows, at least two of the first rows are adjacent one another, and at least two of the second rows are adjacent one another.

Abstract: A semiconductor device includes first, second, and third conductive regions and first and second active regions. The first conductive region has a first width and extends along a first direction. The second conductive region has a second width and extends along the first direction. The first width is greater than the second width. The first active region has a third width and extends along the first direction. The second active region has a fourth width and extends along the first direction. The third width is less than the fourth width. The third conductive region extends along a second direction and is electrically connected to the first conductive region. The second direction is different from the first direction. The first and second active regions are neighboring active regions.